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CsPbI3
Applied Sciences-Basel · 2023 ·Vol. 13 ·期 13 ·7529 · IF 2.7

Highly Stable CsPbI3 Perovskite Quantum Dots Enabled by Single SiO2 Coating toward Down-Conversion Light-Emitting Diodes

Zhangcheng Pan,Xiaolin Zhu,Tianyue Xu,Qingyu Xie,Haitao Chen,Feng Xu,Hao Lin,Jia Wang,Yongfeng Liu

All-inorganic CsPbI3perovskite quantum dots (PeQDs) have sparked widespread research due to their excellent optoelectronic properties and facile synthesis. However, attaining highly stable CsPbI3perovskite quantum dots (PeQDs) against heat and polar solvents still remains a challenge and hinders any further practical application. Here, by exploiting (3-aminopropyl) triethoxysilane (APTES) as the sole silica (SiO2) precursor, we report a one-step in situ synthesis of single SiO2-coated CsPbI3(SiO2-CsPbI3) PeQDs, namely that one SiO2particle only contains one CsPbI3PeQD particle. The obtained SiO2-CsPbI3PeQDs are cubic in shape, have a more uniform size distribution, and possess narrow emission, with near unit photoluminescence quantum yields of up to 97.5%. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy confirm the formation of SiO2through the hydrolysis of APTES on the CsPbI3PeQDs surface. Furthermore, they have a significantly improved stability against storage, heat, and ethanol. By combining purple-emission GaN light-emitting diodes, the SiO2-CsPbI3PeQDs were successfully employed as down-conversion emitters and exhibited considerable enhanced luminous performance and excellent stability, demonstrating their promising future in the practical application of solid-state lighting fields.Keywords:perovskite quantum dots;CsPbI3;photoluminescence;silica coating;heat and polar stability;instability

研究领域: 材料科学 · 光电领域
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JOURNAL OF ALLOYS AND COMPOUNDS · 2022 · IF 6.371

Additive engineering on spiro-OMeTAD hole transport material for CsPbI3 all-inorganic perovskite solar cells with improved performance and stability

Lei Zhang,Bingquan Han,Zhiyuan Liu,Yuxin Yao,Lingbo Xu,Peng Wang,Ping Lin,Xiaoping Wu,Xuegong Yu,Can Cui

CsPbI 3 all-inorganic perovskite has now drawn much attention due to its superior thermal stability compared with the organic-inorganic hybrid counterparts. Despite the great progress achieved recently in this field, CsPbI 3 still suffers from low phase stability when exposed to moisture. We found the phase transition of CsPbI 3 would be accelerated after depositing the conventional hole transport material (HTM) 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]− 9,9′-spirobifluorene (spiro-OMeTAD). This is attributed to the negative effects of the additives in spiro-OMeTAD HTM: the hydrolysis of lithium bis(trifluoromethylsulfonyl)imide (LiTFSI), the corrosivity of 4-tert-butylpyridine (TBP), and the evaporation of TBP. By slightly modifying the additive content, full coordination between LiTFSI and TBP could be achieved and the negative effects mentioned above could be mitigated. Furthermore, tris(2-(1 H-pyrazol-1-yl)− 4-tert-butylpyridine)cobalt(III)-tris(bis(trifluoromethylsulfonyl)imide) (Co(III)TFSI) was added to promote oxidation of spiro-OMeTAD HTM in inert environment. With these approaches of additive engineering, HTMs with better interface contact and charge transport capability could be obtained. The device with optimized spiro-OMeTAD HTM achieved a champion power conversion efficiency (PCE) of 10.61% compared with 6.63% of the control one. Moreover, the optimal device maintained 81% of its initial PCE after storage for 30 days, exceeding that (68%) of the control one. Our results highlight the importance of spiro-OMeTAD HTM on the stability of CsPbI 3 all-inorganic perovskite and provide a facile and feasible way to increase the stability and performance of corresponding solar cells.

研究领域: 材料科学 · 能源科学 · 化学工程
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NANO · 2025 · IF 1.1

Zn2+-Doping Assisted Preparation for Efficient Pure Red CsPbI3 Nanocrystals with Narrow Emission

Qiuhong Chen,Liyan Wu,Weiyuan Luo,Wenjian Pan,Shuang Zhang,Liping Sun,Meng Zeng

CsPbI 3 perovskite nanocrystals (NCs) are emerged as promising materials for optoelectronic devices because of their superior optical properties. However, the brightness of the deep red fluorescence does not satisfy the requirements of outdoor displays. Herein, we report an effective strategy of Zn 2+ -assisted passivation to obtain pure red fluorescence and narrow emission CsPbI 3 NCs at a modified hot-injection method. It is found that the introduced Zn 2+ ions are successfully doped into the NCs lattice to replace some Pb 2+ ions for passivating some defects, increasing the radiative recombination rate and decreasing the nonradiative recombination rate. As a result, the as-prepared Zn 2+ -treated CsPbI 3 (Zn-CsPbI 3 ) have a luminescence peak position at 635 nm and narrow full width at half maximum of only 29.8 nm, with photoluminescence quantum yield (PLQY) up to 81%, which is 30% higher than the pristine NCs. Meanwhile, the structure of the Zn-CsPbI 3 NCs is orthorhombic (γ) phases, and their morphology is a uniformly distributed hexagonal crystal system.

研究领域: 材料科学 · 纳米技术 · 光电子学 · 钙钛矿纳米材料
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Journal of Materials Chemistry A · 2023 ·Vol. 11 ·期 20 ·10556-10564 · IF 11.9

High photoactive black phase stability of CsPbI3 nanocrystals under damp-heat conditions of 85 °C and 85% relative humidity

Shengwen Zou,Jun Kang,Yuzheng Zhang,Mingjing Qi,Xiaojun Yan,Xiaoliang Zhang,Jianmei Huang

CsPbI3 as a newly emerging semiconductor material has displayed tremendous prospects for optoelectronic applications. However, the poor photoactive black-phase stability limits its further application. In this work, we introduce transition metal nickel ion (Ni2+) as a B-site substitute into CsPbI3 nanocrystals (NCs) to stabilize their black phase. The optimized CsPbI3 NCs film presents a record photoactive black-phase stability time of 54 hours under the conditions of 85 °C and 85% relative humidity, over 108 times that of the undoped film. Furthermore, the Ni2+-doped CsPbI3 NCs solutions maintain bright red emission after vigorous stirring with an equal volume of water for 200 hours (the undoped solution is almost completely quenched), and also show bright red emission after being stored in the air for 200 days (the undoped solution is completely quenched within 43 days). Meanwhile, the photoluminescence quantum yield increased from 31.48% for undoped CsPbI3 NCs to 87.69% for doped Ni-3.65% CsPbI3 NCs. We suggest that these outstanding stabilities and excellent optical properties can mainly be attributed to the increased defect formation energy after rational Ni doping and lattice adjustment by partial replacement of Pb2+ with small-sized Ni2+. Our work provides guidance for the synthesis of phase-stabilized CsPbI3 NCs and an insight into the effect of B-site doping in a perovskite lattice, providing a promising pathway to construct stable and efficient photoelectronic devices.

研究领域: 材料科学 · 光电材料 · 半导体物理
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Materials Chemistry Frontiers · 2020 ·Vol. 4 ·期 5 ·1444-1453 · IF 6.788

A zinc non-halide dopant strategy enables efficient perovskite CsPbI3 quantum dot-based light-emitting diodes

Jinhang Li,Jiawei Chen,Leimeng Xu,Sinan Liu,Si Lan,Xiansheng Li,Jizhong Song

Metal ion doping has been considered as one of the most effective methods to achieve highly efficient perovskite light-emitting diodes (LEDs), which is significant for future high-definition displays and high-quality lighting. However, its exact function is still uncertain because the doping of metal ions is also accompanied by the introduction of halide ions and halide-rich circumstances, which can enhance the optoelectronic properties as well. In this work, a zinc non-halide dopant strategy was employed to specifically study the effect of Zn2+ on CsPbI3 quantum dots (QDs). We confirmed that Zn2+ was doped into the perovskites interstitially via X-ray diffraction (XRD) and pair distribution function (PDF) analysis. Zn2+-doped CsPbI3 QDs exhibited higher emission properties with 120% enhancement in the photoluminescence quantum yield (PLQY) compared with pristine CsPbI3 QDs. The Zn2+-doped CsPbI3 QD-based LEDs (QLEDs) showed nearly two-fold increase in the external quantum efficiency (EQE) versus the control device, and it improved from 7.5% to 14.6%. Besides, a maximum current efficiency of 0.83 cd A−1 and the highest luminance of 378 cd m−2 were achieved. These results certify that Zn2+ doping enables high-performance QLEDs without the introduction of halide ions, which is beneficial for the further research on doped perovskite fields and lays the foundation for the future practical applications of QLEDs.

研究领域: 材料科学 · 光电技术 · 纳米技术
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ACS Applied Materials & Interfaces · 2024 · IF 8.3

Ultrafast Rejuvenation of Aged CsPbI3 Quantum Dots and Efficiency Improvement by Sequential 1-Dodecanethiol Post-Treatment Strategy

Xin Li,Longxun Teng,Yening Ren,Rui Liu,Xiaoyuan Zhan,Haiqing Sun,Weiwei Zhang,Jianxu Ding,Huiling Zhu

Metal halide perovskite CsPbI3 quantum dots (QDs) have sparked widespread research due to their intriguing optoelectronic. However, the CsPbI3 QDs undergo inevitable aging and luminescence quenching caused by the weak binding ability of oleate (OA–)/oleylammonium (OAm+), hindering further practical application. Herein, we have realized ultrafast rejuvenation of the aged CsPbI3 QDs that have lost their photoluminescence performance based on a 1-dodecanethiol (DDT) surface ligand to restore the outstanding red light emission with a high photoluminescence quantum yield (PLQY) from 25 to 90%. Furthermore, CsPbI3 QDs with DDT surface treatment maintain a cubic phase and high PLQY value even after 35 days. The DDT ligands can form a strong bond with Pb2+ and passivate I– ion vacancies, enhancing radiative recombination efficiency and thereby improving the PLQY of the QDs. The stable yet easily accessible surface of the DDT-capped CsPbI3 QDs was successfully employed as white LEDs and exhibited considerable enhanced luminous performance, suggesting promising application in solid-state lighting fields.

研究领域: 材料科学 · 光电技术 · 纳米技术
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APPLIED SURFACE SCIENCE · 2023 · IF 6.7

Origin of the bias instability in CsPbI3 light-emitting diodes

Jingcong Hu,Chenghao Bi,Xuetao Zhang,Bohai Tian,Yue Lu,Jianjun Tian,Manling Sui

With the rapid development of all-inorganic CsPbX 3 (X = I, Br, and Cl) perovskite light-emitting diodes (PeLEDs), their external quantum efficiency (EQE) has made great progress in the last few years. However, severe performance degradation at the operation condition impedes its large-scale industrial application. In this text, by using the advanced spherical aberration corrected transmission electron microscope (TEM), the degradation pathway of PeLEDs under bias loading was more systematically and comprehensively, especially from the viewpoint of its microstructural evolution pathway, which showed that iodine vacancy migration triggered the structural collapse was the primary inducement of performance decay. To solve this problem, inorganic termination ZnI 2 was employed to passivate the surface halide vacancy defects and supplement the halide ion into the lattice, which significantly improves the photoluminescence (PL) lifetime and stability of CsPbI 3 quantum dots (QDs). As expected, not only the EQE of PeLEDs has been greatly improved, but also the operating half-lifetime is enhanced by about 4 times as compared with the original one. Microstructural characterization and density functional (DFT) calculations confirm that the preferential segregation of Zn element on the surface of QDs was the principal cause to passivate the defect state of QDs, which exhibits lower formation energy and better operational stability.

研究领域: 材料科学 · 光子学 · 半导体物理
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ACS Applied Nano Materials · 2022 · IF 6.14

Stable CsPbI3 Nanoplatelets with Tunable Morphologies and Dimensions for Red Light-Emitting Diodes

Cong Xie,Aiyu Zhang,Ling Chen,Ping Yang

Red-emitting CsPbI3 perovskite materials are still limited in various commercial applications because of their stability being related to the morphology and dimension. In this paper, a solvothermal method was developed to fabricate CsPbI3 perovskite nanomaterials with governable morphologies (e.g., nanoplatelets (NPLs) to nanocubes (NCs)) and dimensions ranging from the zero-dimensional (0D) Cs4PbI6 to the three-dimensional (3D) CsPbI3. By adjusting the amount of Cs precursor solutions, the photoluminescence (PL) peak position of the samples was tuned over the whole red-emitting region (from 607 to 700 nm). In addition, the reaction temperature affected the PL properties of the samples and demonstrated that temperature was critical to control the performance of CsPbI3 perovskite materials. Furthermore, sodium dodecyl benzene sulfonate (SDBS) was chosen as the additive to improve the stability of the prepared samples. The result provided an approach to get CsPbI3 perovskite nanocrystals with stabile PL. Finally, CsPbI3 NPLs embedded in the polystyrene film displayed bright and stable white light emission.

CAS / MDL: 6080-56-4 112-90-3
研究领域: 材料科学 · 光电子学 · 纳米技术
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LANGMUIR · 2025 · IF 3.9

2-Aminoethanethiol Hydroiodate Additives Induced Phase Stability Improvement of CsPbI3 Films for Use in Inorganic Perovskite Solar Cells

Xihong Ding,Demeng Qian,Hui Wang,Qian Hu,Lin Zhu,Hui Chen,Tengda Xu,Aohan Li,Wei Hong

This study investigates the role of 2-aminoethanethiol hydroiodate (2-AET·HI) additives in enhancing the phase stability and photovoltaic performance of CsPbI3 films for inorganic perovskite solar cells. The incorporation of 2-AET·HI into the precursor solution results in a more uniform and compact film morphology. X-ray diffraction (XRD) analysis reveals that the 2-AET·HI-treated CsPbI3 films retain their black α-phase, even after 300 h at 25% RH and ∼25 °C, whereas the control samples show a rapid transition to the nonphotoactive δ-phase. This improvement in phase stability is reflected in the enhanced photovoltaic performance, with the 2-AET·HI-modified devices exhibiting a power conversion efficiency (PCE) of 16.7%, compared to 15.4% for the control devices. Furthermore, the 2-AET·HI-modified devices display superior long-term stability, retaining 83% of their initial PCE after 192 h in ambient conditions, in stark contrast to the unmodified devices, which degrade rapidly.

CAS / MDL: 10034-85-2
研究领域: 材料科学 · 能源技术 · 光伏研究
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Nature Communications · 2018 ·Vol. 9 ·期 1 ·1-8 · IF 12.353

Surface passivation engineering strategy to fully-inorganic cubic CsPbI3 perovskites for high-performance solar cells

Li Bo,Zhang Yanan,Fu Lin,Yu Tong,Zhou Shujie,Zhang Luyuan,Yin Longwei

Owing to inevitable thermal/moisture instability for organic–inorganic hybrid perovskites, pure inorganic perovskite cesium lead halides with both inherent stability and prominent photovoltaic performance have become research hotspots as a promising candidate for commercial perovskite solar cells. However, it is still a serious challenge to synthesize desired cubic cesium lead iodides (CsPbI 3 ) with superior photovoltaic performance for its thermodynamically metastable characteristics. Herein, polymer poly-vinylpyrrolidone (PVP)-induced surface passivation engineering is reported to synthesize extra-long-term stable cubic CsPbI 3 . It is revealed that acylamino groups of PVP induce electron cloud density enhancement on the surface of CsPbI 3 , thus lowering surface energy, conducive to stabilize cubic CsPbI 3 even in micrometer scale. The cubic-CsPbI 3 PSCs exhibit extra-long carrier diffusion length (over 1.5 μm), highest power conversion efficiency of 10.74% and excellent thermal/moisture stability. This result provides important progress towards understanding of phase stability in realization of large-scale preparations of efficient and stable inorganic PSCs.

研究领域: 材料科学 · 光伏技术 · 纳米技术 · 能源材料
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Materials Today Physics · 2022 · IF 11.021

Predicted THz-wave absorption properties observed in all-inorganic perovskite CsPbI3 thin films: Integrity at the grain boundary

Inhee Maeng,Shi Chen,Seungjun Lee,Shenghao Wang,Young-Kyun Kwon,Min-Cherl Jung

The realization of terahertz (THz) detectors using organic-inorganic hybrid perovskite (OHP) materials presents a challenge because of the high real conductivities and broad THz absorption spectra required. The control of phonon vibration modes in OHPs depends on the control of defect states such as the defect-incorporated perovskite structure and the δ/α -mixed interfacial structure observed in MAPbI 3 and δ/α -mixed FAPbI 3 , respectively. Difficulties with defect control in particular materials may amplify relative risk factors and invite strong resistance to commercialization. As an alternative to OHPs, the all-inorganic perovskite material CsPbI 3 (lacking the hydrophobic organic cations that generate structural defects) constitutes a good candidate for THz detectors. We investigated the phonon vibration modes of thin films of the all-inorganic perovskite γ -CsPbI 3 containing no atomic or chemical defect states. We observed the three expected major phonon vibration modes at 0.9, 1.5, and 1.8 THz that originate from the transverse I–Pb–I frame, the Cs–I–Cs optical vibration, and the longitudinal I–Pb–I frame, respectively, finding good agreement with theoretical simulations. Significantly, the real conductivity of these all-inorganic perovskite thin films ranged from approximately 10–40 S/cm across a broad frequency range of 0.5–3.0 THz, demonstrating the material's considerable potential for application as a THz-band detector.

CAS / MDL: 10034-85-2
研究领域: 材料科学 · 光子学 · 半导体物理
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SOLAR ENERGY MATERIALS AND SOLAR CELLS · 2020 · IF 6.984

Ultrahigh detectivity ultraviolet photodetector based on orthorhombic phase CsPbI3 microwire using temperature self-regulating solar reactor

Shusheng Pan,Ziyue Rao,Yujie Wu,Zhiyu Liu,Jun Ge,Shan Zhang

In this study, a temperature self-regulating solar reactor based on VO 2 thermochromic coating is demonstrated. The temperature of solar reactor can be stabilized at 68.8 °C, which is corresponded to the critical point of metal-to-insulator transition of VO 2 . By employing the solar reactor, the orthorhombic phase CsPbI 3 microwires have been synthesized through solution phase reaction route. Strong emission peaks at 490 nm and 470 nm have been observed in CsPbI 3 microwires under ultraviolet and soft X-ray excitation, respectively. The high performance photodetector based on CsPbI 3 microwire show a detectivity of 1.09 × 10 14 Jones, responsivity of 4.72 A/W, rapid rise and decay time of 0.96 and 0.93 s at 325 nm. Our results demonstrate that the temperature self-regulating solar reactor can be applied for energy-saving solution phase reactor for synthesizing high quality inorganic materials.

研究领域: 材料科学 · 纳米光电子学 · 无机功能材料 · 能源材料 · 半导体器件
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