Materials Today Nano
·
2026
·
IF 7.6
Wen He,Duoduo Ling,Yanghao Bi,Dongbo Wang,Lei Chen,Yinze Zhang,Qiudan Geng,Ali Raza,Yiming Zhao,Sihan Zhang,Xiaoxue Yu,Bangsheng Li,Lianshe Fu,Jinzhong Wang
Electron beam evaporation and post-annealing enable low-cost, high-quality Bi 2 Te 3 /GaN heterojunction fabrication. • The Bi 2 Te 3 /GaN photodetector achieves a specific detectivity of 2.01 × 10 12 Jones at 0 V. • Built-in field of heterojunction separates photogenerated carriers for self-powered UV-NIR detection. • This device is used as a single-pixel sensor and achieves high-quality multi-wavelength imaging. Self-powered broadband photodetectors are critical for energy-efficient optoelectronics in the Internet of Things, environmental sensing, and wearable imaging, yet achieving broadband response with high specific detectivity in a device through a scalable fabrication method remains a major challenge. In this work, we report a Bi 2 Te 3 /GaN heterojunctionphotodetector that integrates narrow- and wide-bandgap semiconductors to realize self-powered operation from ultraviolet to near infrared region. The Bi 2 Te 3 /GaN heterostructure is fabricated by depositing a homogeneous Bi 2 Te 3 film with high crystallinity on a GaN substrate through the electron beam evaporation method followed by a post-annealing. Without any external bias, the photodetector exhibits a broadband specific detectivity above 10 9 Jones and a fast response lower than 100 m s in the 367-850 nm spectral range, attributed to efficient photogenerated carrier separation across the heterojunctiondue to the built-in electric field at the interface. Under 367 nm light irradiation, the device achieves a responsivity of 80.39 mA/W and a specific detectivity of 2.01 × 10 12 Jones. The device also demonstrates excellent cycling durability, maintaining stable photoresponse over 100 cycles at 638 nm illumination, and supports high-resolution and multi-wavelength imaging. This work provides a cost-effective, scalable strategy for constructing Bi 2 Te 3 /GaN heterojunctions and highlights the potential of Bi 2 Te 3 -based detectors for next-generation self-powered broadband photodetection technologies. Download: Download high-res image (369KB) Download: Download full-size image
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高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
·
IF 6.7
Shuang Li,Xiaoyu Chen,Zhuo Liu,Ge Song,Yan Xu
So far reported most semiconductor metal oxide-based triethylamine (TEA) gas sensors need to work at high operating temperature, which not only lead to power consumption but also shorten the service life of sensors. Therefore, there is a high requirement to develop convenient TEA sensors with low operating temperature. In this work, hierarchical radial porous GaN/ZnO n-n heterostructure was successfully prepared by surface modification of ZIF (Zeolitic Imidazolate Framework)-61 microspheres with GaN nanoparticles (NPs) via electrostatic attraction effect combined with a subsequent pyrolysis. The resultant GaN/ZnO heterostructure presents significantly improved TEA sensing performance compared with pure ZnO, reflecting in reduced operating temperature (80 ℃) and higher response value of 24.18 towards 50 ppm TEA, likewise good selectivity and stability. This can be attributed to the highly permeable structure and large surface area of GaN/ZnO heterostructure, accelerating the adsorption and diffusion of gases. The GaN NPs decorated on ZnO facilitate electron transfer and adsorption of reactive oxygen species. The in-situ DRIFTs was conducted to investigate the oxidation of TEA over GaN/ZnO surface. The work demonstrates an electrostatic interaction strategy combined with pyrolysis to obtain a novel radial porous GaN/ZnO hierarchical microspheres showing intriguing TEA sensing properties.
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CERAMICS INTERNATIONAL
·
2023
·
IF 5.2
Peng Qiu,Huiyun Wei,Qianming Huang,Meina Yu,Yuyu Hu,Xiaoli Zhu,Heng Liu,Xinhe Zheng
In this work, gallium nitride (GaN) is employed for the first time to modulate the charge dynamics of quantum dot-sensitized solar cells (QDSCs). An ultrathin GaN layer has been coated on the surface of both mesoporous TiO 2 photoanode and quantum dots (QDs) at 240 °C by plasma-enhanced atomic layer deposition (PEALD) approach. It is revealed that there exists a stepped energy level alignment among the as-prepared TiO 2 film, GaN layer and QDs, which accelerates the extraction and collection of photogenerated electrons. Meanwhile, a type-II core-shell QD/GaN structure is formed benefiting from the self-limiting reactions of PEALD, resulting in an enhanced light absorption and a redshift of absorption edge. In addition, the dense GaN layer can also effectively inhibit the reverse transfer of photogenerated electrons from TiO 2 to QDs or electrolyte while improving the connection between TiO 2 and QDs. Ultimately, the QDSCs with a 0.68 nm-thick GaN layer achieve a 29% increase of short-circuit current density and enhanced device efficiency, even with reduced fill factor. This work has shown the multi-functions of GaN in regulating the charge dynamics of QDSCs as well as the potential advantages in replacing TiO 2 as photoanode for electronic extraction and transport.
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高影响因子
ANALYST
·
2018
·Vol. 144
·期 2
·663-668
·
IF 3.864
Le Gu,Shuai Yang,Bin Miao,Zhiqi Gu,Jin Wang,Wei Sun,Dongmin Wu,Jiadong Li
In this report, we have developed a high sensitivity zinc ion (Zn2+) detection method based on a Schiff base functionalized extended gate (EG)-AlGaN/GaN high electron mobility (HEMT) sensor. The complexation reaction between the Schiff base and the zinc ions would cause surface potential change on the extended gate, and achieve the purpose of zinc ion detection. Compared with conventional methods, the Schiff base functionalized EG-AlGaN/GaN high electron mobility sensor showed a rapid response (less than 10 seconds) and the limit of detection (LOD) was 1 fM. At the same time, the real-time detection of zinc ion concentration ranging from 1 fM to 1 μM showed good linearity (R2 = 0.9962). These results indicated that it provides a promising real-time detection method for trace-free zinc ion trace detection.
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高影响因子
ANALYTICAL CHEMISTRY
·
2020
·
IF 6.785
Danli Hu,Hongfeng Liang,Xinyang Wang,Fang Luo,Bin Qiu,Zhenyu Lin,Jian Wang
A gold nanoparticle (AuNPs)/gallium nitride (GaN) Schottky junction was fabricated by growing AuNPs in situ on the surface of GaN and then etched by H2O2 to appropriate diameter. The photogenerated electrons of GaN can be captured and transferred by the AuNPs to increase the migration efficiency, and the electron–hole pairs were separated, which results in the enhancement of the photoelectric performance of the system. The Fermi energy level of AuNPs and the charge transfer efficiency of the AuNPs/GaN can be adjusted by controlling the size of the AuNPs. Then the AuNPs/GaN Schottky photoelectrode had been applied to develop a novel photoelectrochemical (PEC) aptasensor for the epithelial ovarian cancer marker-CA125 detection. The DNA aptamer of CA125 was modified on the surface of the AuNPs via Au–S bonds. The aptamer can bind with the target with high selectivity, and the photoelectron transfer process of the system can be blocked by the protein, which results in the decrease of the photocurrent of the system. The ratio of photocurrent before and after incubation with CA125 (I1/I0) has a linear with the concentration of CA125 in the range of 1–100 U/mL with a detection limit of 0.3 U/mL. The standard addition recovery rates were between 86.01% and 90.09%. This method showed good sensitivity, selectivity, and reliability in detecting CA125 in serum.
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高影响因子
ACS Applied Nano Materials
·
2019
·
IF 0
Hongxiang Zhang,Chunxia Wu,Canran Zhang,Bisheng Yan,Jiyuan Guo,Gangyi Zhu,Jun Dai
In this paper, we report the dual-wavelength green-light emission from zinc oxide (ZnO)-nanoseed-decorated p-GaN (gallium nitride)/n-ZnO nanorod/CsPbBr3 quantum dots (QDs) light-emitting diodes (LEDs). At the same time, the effect of ZnO nanoseeds on the p-GaN/n-ZnO nanorod/CsPbBr3 QDs LED performance is deeply studied. ZnO nanoseeds were fabricated by magnetron sputtering and the sol–gel method; then ZnO nanorods were obtained on GaN by hydrothermal treatment to form the p-GaN/n-ZnO nanorod heterojunction, and green CsPbBr3 QDs were further deposited on ZnO nanorod arrays to realize LEDs. The results show that magnetron-sputtering ZnO nanoseeds can induce regular vertical ZnO nanorod arrays, and the corresponding device presents a better electroluminescence (EL) performance. The X-ray diffraction, atomic force microscopy, and EL mechanisms indicate that the p-GaN/n-ZnO nanorod with magnetron-sputtering ZnO nanoseeds has a better crystalline interface. Our results indicate that the p-GaN/n-ZnO nanorod/CsPbBr3 QDs heterojunction structure can be served as dual-wavelength LEDs, and magnetron-sputtering ZnO nanoseeds can give rise to a better EL performance.
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JOURNAL OF CRYSTAL GROWTH
·
2013
·
IF 1.552
Xionghui Zeng,Baixiang Han,Xiaodan Wang,Jianping Shi,Yu Xu,Jicai Zhang,Jianfeng Wang,Jinping Zhang,Ke Xu
Two kinds of GaN powders were grown using the chemical vapor transport process, which involved different Ga sources, i.e., Ga 2 O 3 and Ga metal. Although both GaN powders have a wurtzite crystal structure, which was confirmed by powder X-ray diffraction, their structural and optical properties were different. The powders prepared using the gallium nitridation method revealed a hexagonal morphology. The particles were approximately 2 μm in size, and we determined the large face (0002) by selective area electron diffraction , indicating that they had good crystallinity . In addition, the oxygen content was relatively low, similar to the GaN bulk grown by hydride vapor phase epitaxy . A strong band-edge luminescence was observed in the photoluminescent and cathodoluminescent spectra. However, the powders prepared using the Ga 2 O 3 nitridation method had an irregular morphology, and several tens of nanometer in size. The grain boundaries and the amorphous regions can be seen using high-resolution transmission electron microscopy imaging. Moreover, the oxygen concentration was relatively high. In this paper, we describe the different properties of these two kinds of powders using growth kinetics.
研究领域:
材料科学
·
半导体物理
·
晶体生长
·
光电子学
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高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2023
·
IF 6.2
Qing Liu,Jiang Shi,Weidong Song,Xingfu Wang,Longfei He,Shaobin Zhan,Fangliang Gao,Shuti Li
As an important component of optical sensors , position-sensitive detector (PSD) plays an important role in non-contact measurement systems and is widely used in many important fields. However, the preparation and application of ultraviolet (UV) PSD are still to be studied. Herein, we propose a high precision UV PSD constructed by graphene (Gr)/GaN heterojunction (active area is 5 ×5 mm 2 ) for the first time, and Fowler-Nordheim tunneling mechanism has been used to improve device performance. Benefiting from the FNT, under a weak light power of 0.06 mW/cm 2 , the PSD is able to determine the position of the UV light spot through the output photocurrent difference, displays high precision (0.16 μA/mm), excellent weak light detection capability，and good linearity without power supply. Besides, the Gr/GaN show an ultralow threshold voltage (0.132 V) of FNT. When the bias is higher than 0.132 V, photogenerated carriers will tunneling the thin insulation layer by the FNT, resulting in a multiplication of the photocurrent. Therefore, under the same power densities light irradiation (0.06 mW/cm 2 ), the device exhibits an ultrahigh responsivity of 1.88 A/W, a remarkable detectivity of 2.71 × 10 13 Jones, and a high LDR of over 99.58 at 0 V bias. More importantly, as an optoelectronic demodulator the device realizes the decoding of optical signals into electrical signals, showing great potential for application in non-contact measurement systems.
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Advanced Materials Interfaces
·
2022
·Vol. 9
·期 9
·2102286
·
IF 6.389
Fei Chen,Congcong Deng,Xingfu Wang,Chao Liu,Qing Liu,Can Zou,Guohui Wu,Zixuan Zhao,Kai Chen,Fangliang Gao,Shaobin Zhan,Shuti Li
The development of self-powered high-performance UV photodetectors is essential for energy efficient futuristic wearable and portable applications. Herein, a self-powered organic/inorganic (PTAA/GaN microwire) hybrid heterojunction ultraviolet (UV) photodetector (PD) has been prepared by a low-cost and simple spin-coating method. Furthermore, the piezo-phototronic effect as an effective interfacial regulating strategy is utilized to modulate the photo-response performances of the PD by engineering the energy-band structure at the local junction/interface. Under 325 nm laser irradiation, the obtained device demonstrates excellent photo-response properties at 0 V bias, showing a high responsivity (268 mA W −1 ) and detectivity (2.49 × 10 12 Jones) under weak light intensity as low as 0.2 mW cm −2 , as well as fast response speeds (rise time of 14 ms and decay time of 23 ms). The PD exhibits better performance than most reported organic/inorganic heterojunction self-powered PDs. By applying a − 0.52% compressive strain, the responsivity and detectivity of the device are greatly enhanced by 32% without external bias, and by 1256% at 2 V bias under 1.4 mW cm −2 light intensity. On the contrary, by applying a 0.41% tensile strain, the responsivity and detectivity are decreased by 18% without external bias. It indicates that the strain has a significant modulating effect on the photo-response performance of the PD. The positive piezo-potential modulated energy-band structure at the PTAA/GaN interface may account for the enhanced performance. This study demonstrates a promising approach to optimize the performance of a self-powered heterostructure optoelectronic devices through strain modulated.
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高影响因子
ACS Applied Materials & Interfaces
·
2020
·
IF 8.758
Jing Li,Wenjin Yang,Aimin Wu,Xinglai Zhang,Tingting Xu,Baodan Liu
A (GaN)1–x(ZnO)x solid solution as a promising visible-light-driven photocatalyst for overall water splitting has attracted extensive attention. In this work, we proposed a template reactive strategy toward the synthesis of band-gap tunable 2D (GaN)1–x(ZnO)x nanosheets as thin as 14 nm to reduce the carrier transportation path and thus efficiently decrease the recombination of electrons and holes. It is demonstrated that the template strategy enables an ideal morphology and structure transformation from hexagonal 2D ZnGa2O4 nanosheets to 2D (GaN)1–x(ZnO)x nanosheets in the nitridation process. After the modification of 1 wt % of Rh cocatalyst, the flowerlike (GaN)0.89(ZnO)0.11 nanosheets show an enhanced hydrogen evolution in pure water (pH 4.5).
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高影响因子
DALTON TRANSACTIONS
·
2017
·Vol. 46
·期 8
·2643-2652
·
IF 4.029
Aimin Wu,Jing Li,Baodan Liu,Wenjin Yang,Yanan Jiang,Lusheng Liu,Xinglai Zhang,Changmin Xiong,Xin Jiang
(GaN)1−x(ZnO)x solid solution has attracted extensive attention due to its feasible band-gap tunability and excellent photocatalytic performance in overall water splitting. However, its potential application in the photodegradation of organic pollutants and environmental processing has rarely been reported. In this study, we developed a rapid synthesis process to fabricate porous (GaN)1−x(ZnO)x solid solution with a tunable band gap in the range of 2.38–2.76 eV for phenol photodegradation. Under visible-light irradiation, (GaN)0.75(ZnO)0.25 solid solution achieved the highest photocatalytic performance compared to other (GaN)1−x(ZnO)x solid solutions with x = 0.45, 0.65 and 0.85 due to its higher redox capability and lower lattice deformation. Slight Ag decoration with a content of 1 wt% on the surface of the (GaN)0.75(ZnO)0.25 solid solution leads to a significant enhancement in phenol degradation, with a reaction rate eight times faster than that of pristine (GaN)0.75(ZnO)0.25. Interestingly, phenol in aqueous solution (10 mg L−1) can also be completely degraded within 60 min, even under the direct exposure of sunlight irradiation. The photocurrent response indicates that the enhanced photocatalytic activity of (GaN)0.75(ZnO)0.25/Ag is directly induced by the improved transfer efficiency of the photogenerated electrons at the interface. The excellent phenol degradation performance of (GaN)1−x(ZnO)x/Ag further broadens their promising photocatalytic utilization in environmental processing, besides in overall water splitting for hydrogen production.
研究领域:
材料科学
·
环境科学
·
光催化
·
半导体物理
·
能源化学
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高影响因子
ADVANCED MATERIALS
·
2026
·
IF 29.1
Tingting Lin,Liwei Liu,Xinguo Liu,Changjian Zhou,Wenliang Wang
High polarization-selectivity UV photodetectors with multifunctional integration play a crucial role in the next-generation optoelectronic devices. However, weak and unruly dichroism radio (DR) of naturally anisotropic materials seriously restricts the detection accuracy and practical application, especially for wide-bandgap materials with rough surfaces and inherent weak anisotropy. In this work, a novel approach for the polarization-selectivity UV photosynapse devices with PdSe 2 / a -plane GaN heterostructures has been proposed. A simple pre-selenization treatment is employed to enhance the anisotropy (DR = 16) and crystallinity of PdSe 2 , addressing the current limitation of insufficient anisotropy (DR<5) that hinders the practical application. The devices take advantage of inherent anisotropic materials and synergistic effect from the in situ growth of PdSe 2 on a -plane GaN, resulting in an enhancement of anisotropic photocurrent ratio from 1. 6 to 10.7. Thanks to the synergistic effect of the whole device architecture, the devices reveal an ultra-long relaxation time of up to 282s and effectively improve the details of image recognition, speed up calculations, and accurate detection capabilities. The combination of high polarization-selectivity, accurate detection, ultra-long memory, and outstanding data processing capabilities establishes the photodetector as a promising candidate for the on-chip integration of multi-information carrying, processing, and neuromorphic computing.
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