Science Advances
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2025
·Vol. 11
·期 7
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IF 12.5
Ligang Wang,Zher Ying Ooi,Feng-Yan Jia,Yuqi Sun,Yun Liu,Linjie Dai,Junzhi Ye,Jincan Zhang,Hio-Ieng Un,Yu-Hsien Chiang,Sanyang Han,Alessandro James Mirabelli,Miguel Anaya,Zhilong Zhang,Yang Lu,Chen Zou,Baodan Zhao,Dawei Di,Xiaodong Yang,Dengyang Guo,Yu Tan,Hao Dong,Shaocheng Liu,Tianjun Liu,Huanping Zhou,Samuel D. Stranks,Ling-Dong Sun,Chun-Hua Yan,Richard H. Friend
Colloidal quantum dots (QDs) have illuminated computer monitors and television screens due to their fascinating color-tunable properties depending on the size. Here, the electroluminescence (EL) wavelength of perovskite LEDs was tuned via the atomic layer number (ALN) of nanoplates (NPs) instead of the “size” in conventional QDs. We demonstrated efficient LEDs with controllably tailored emission from n = 3, 4, 5, and ≥7 ALN perovskite NPs with specific and discrete major peaks at 607, 638, 669, and 728 nanometers. These LEDs demonstrated peak external quantum efficiency (EQE) of 26.8% and high wavelength reproducibility with less than 1 to 2 nm difference between batches. High color stability without observable EL spectral change and operating stability with the best T50 of 267 minutes at 1.0 milliampere per square centimeter was also achieved. This work demonstrates a concept of tailoring specific ALN emission with fixed wavelengths, shedding light on efficient, emission-discrete, and color-stable LEDs for next-generation display.
研究领域:
材料科学
·
光学工程
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产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2024
·
IF 5.8
Lanjiao Li,Ying Chen,Rongfei Wei,Siyu Guo,Xiangling Tian,Fangfang Hu,Hai Guo
Near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) are playing an increasingly important role in the spectroscopy technology fields. Developing high-performance NIR-emitting phosphors is of immense significance for advancing NIR pc-LEDs. Herein, the approach of cationic substitution of Ca 2+ by Mg 2+ was designed in Ca 4 ZrGe 3 O 12 :Cr 3+ . Remarkably enhanced NIR emission and strikingly improved thermal stability are realized. The luminescence intensity at 423 K compared with that of room temperature ascends from 45.67 % to 72.81 %. Moreover, the representative sample was assembled to a NIR pc-LED with favorable output power and photoelectric conversion efficiency by combining a commercial 470 nm blue chip. The packaged LED demonstrates the feasibility of practical applications in night vision, biological imaging, and fruit detection. The above findings verify the potential prospect of Ca 4- x Mg x ZrGe 3 O 12 :Cr 3+ phosphor for the utilizations in NIR light sources.
研究领域:
材料科学
·
光学工程
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DOI
高影响因子
ChemPhotoChem
·
2024
·
IF 3
Lulu Wei,Shubing Tian,Mingze Sun,Ruili Song,Yunhu Wang,Mingming Zhang,Lei Wang,Zhanhua Wei,Jun Xing
Graphical The influence of perovskite components, preparation conditions, and device structures on the spectral stability of mixed-halide perovskite blue LED is investigated systematically. Among these factors, A-site cations, annealing temperature and the content of the passivator affect the spectral stability significantly. After optimization, a spectra-stable and efficient mixed-halide perovskite blue LED is successfully fabricated. Metal mixed-halide perovskite has demonstrated considerable potential in the development of solution-treated blue light-emitting diodes (LEDs) with high external quantum efficiency, excellent color purity, and tunable wavelength. However, the severe phase segregation of mixed-halide perovskite under bias voltage would lead to the spectral instability of LEDs. Therefore, suppressing phase segregation of Br/Cl perovskite towards spectrally stable blue perovskite LEDs (PeLEDs) is a big challenge. In this work, we systematically explore the influence of perovskite component, preparation conditions, and device structures on the spectral stability of PeLEDs. We have observed that the stable spectra increased the proportion of Cs in the A-site cations, passivator, and the annealing temperature of perovskite films. Finally, we achieve a spectra-stable and high-performance blue PeLED under optimized conditions. Our findings provide important guidance for preparing spectrally stable PeLEDs.
研究领域:
材料科学
·
光电工程
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产品关联
DOI
高影响因子
Advanced Optical Materials
·
2026
·
IF 7.2
Zichen Zhao,Kai An,Jiefu Tan,Bo Hu,Kaihang Wang,Qianqian Wang,Feng Ding,Muzhi Cai,Desui Chen,Junjie Si,Zugang Liu
Metal halide perovskites are promising materials for next-generation light-emitting diodes (LEDs) owing to their excellent optoelectronic properties and low-cost solution processability. The efficiency and operational lifetime of perovskite LEDs (PeLEDs) are strongly governed by the crystal quality of perovskite emitters. Among the various factors influencing perovskite crystallization, the surrounding solvent vapors, particularly ambient moisture, can significantly modify both the initial-stage nucleation and the subsequent post-deposition structural evolution. However, current moisture treatments are highly engineering-driven, and the fundamental mechanisms underlying the impacts of moisture on perovskite remain unclear. This work systematically investigates how moisture treatment with controllable humidity modifies the structural and optoelectronic properties of CsPbBr 3 films. Moisture induces the rapid formation of Cs 4 PbBr 6 and promotes continuous crystal growth of CsPbBr 3 , resulting in alterations to the film composition, defect landscape, and grain-boundary characteristics that strongly affect carrier recombination and ion migration behaviors. Consequently, we achieve a champion device efficiency exceeding 20% after short-term moisture exposure, and a half-lifetime of 220 min at an initial luminance of 10 000 cd m −2 under prolonged moisture treatment. This work provides mechanistic insight into moisture-driven film evolution and demonstrates that the moisture treatment offers an effective strategy to enhance the performance of PeLEDs.
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DOI
高影响因子
PHYSICA B-CONDENSED MATTER
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2026
·
IF 3.2
Tao Chen,Guangyao Zhu,Jing Li,Chaoying Yan,Yao Xiao,Caixia Yang
Li 2 ZnGeO 4 : Dy 3+ , Eu 3+ phosphors were successfully synthesized by solid-state reaction. The phosphor samples exhibited high-quality white light emission under 391 nm excitation. The optimal doping concentration of Eu 3+ in Li 2 ZnGeO 4 : Dy 3+ , Eu 3+ phosphors is 0.3%. Subsequently, as the doping concentration of Eu 3+ increases, a concentration quenching phenomenon occurs. The internal quantum efficiency of Li 2 ZnGeO 4 : 0.2Dy 3+ , 0.2Eu 3+ phosphor is 37.7%. Within the temperature range of 423K to 473K, Li 2 ZnGeO 4 :0.2Dy 3+ ,0.2Eu 3+ phosphors exhibit excellent thermal stability, with a thermal quenching activation energy of 0.2472 eV. The luminous intensity at 423 K can be maintained at more than 76.0% of the room temperature. The synthetic Li 2 ZnGeO 4 : Dy 3+ , Eu 3+ phosphors were combined and packaged with 387 nm ultraviolet chips to fabricate LED devices. Under the drive of current, they emitted bright white light with a color rendering index Ra of 80.7. When the current varies from 20 mA to 220 mA, the emission spectrum intensifies, indicating the stable illumination characteristics of the prepared Li 2 ZnGeO 4 : Dy 3+ , Eu 3+ phosphors. The characteristic of spectral stability enhancement under high current meets the high-load working requirements of lighting appliances and provides material support for the upgrading of related electrical appliances.
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高影响因子
OPTICS AND LASER TECHNOLOGY
·
2020
·
IF 3.233
Xiaoyong Huang,Shaoying Wang,Balaji Devakumar
Red-emitting phosphors are highly demanded as color converters for both white light-emitting diodes (LEDs) and plant growth LEDs. Herein, we reported on the discovery of novel Mn 4+ ions doped Ca 2 YTaO 6 double-perovskite red-emitting phosphors. These samples were successfully prepared via the high-temperature solid-state reaction method, and their phase purity was confirmed by powder X-ray diffraction (XRD) patterns. XRD Rietveld refinement results revealed that the title compound crystallized in monoclinic space group P 2 1 / n with lattice parameters of a = 5.59630(8) Å, b = 5.82308(8) Å, c = 8.07158(12) Å, α = γ = 90 ° , β = 89.9768(23)°, and V = 263.034(4) Å 3 . The Ca 2 YTaO 6 structure consisted of abundant [TaO 6 ] octahedrons, providing appropriate sites for Mn 4+ incorporation. As obtained by photoluminescence measurements, the Ca 2 YTaO 6 :Mn 4+ phosphors showed a broadband excitation spectrum in the 250–600 nm wavelength range with two peaks around 350 and 514 nm. Under the 350 nm excitation, they exhibited narrowband deep-red emissions in the 630–750 nm wavelength range peaking at 680 nm with full-width at half maximum (FWHM) of 36 nm, corresponding to the spin-forbidden 2 E g → 4 A 2g transition of Mn 4+ ions. The investigation of the doping concentration-dependent optical properties of Ca 2 YTaO 6 :Mn 4+ phosphors indicated the critical quenching concentration equal to 0.2 mol%. The dipole-dipole interaction between Mn 4+ activators was the major mechanism leading to the concentration quenching effect. The fluorescence decay lifetimes of Ca 2 YTaO 6 :Mn 4+ phosphors decreased from 0.34 to 0.201 ms with increasing Mn 4+ doping concentrations. The CIE chromaticity coordinates of these phosphors were calculated based on the emission spectra, and the color purity reached up to 98.3%. Besides, the internal quantum efficiency of the optimal Ca 2 YTaO 6 :0.2%Mn 4+ sample was measured to be 21%.
研究领域:
材料科学
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光学材料
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固态化学
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光子学
·
发光二极管（LED）
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DOI
高影响因子
INORGANIC CHEMISTRY
·
2023
·
IF 4.6
Yi Zhang,Zhexuan Gao,Yingguang Li,Shuyang Chen,Mingxiao Han,Jie Li,Qihao Zhang,Yang Shen,Degang Deng,Shiqing Xu
The La2LiSbO6: xCr3+ phosphors were synthesized by means of a high-temperature solid-phase method. Based on the differences in ionic radius, valence state, and formation energy, the substitution sites of Cr3+ ions are discussed in detail. The optimized doping concentration of Cr3+ is determined to be 0.01. Under 517 nm excitation, the La2LiSbO6: 0.01Cr3+ phosphor presents a wide emission band (from 700 to 1350 nm) with a peak centered at 952 nm. Additionally, its corresponding full width at half-maximum is 155 nm, and the internal quantum efficiency reaches 62.4%. Meanwhile, the emission intensity of the La2LiSbO6: 0.01Cr3+ phosphor at 373 K is about 63.7% of that at room temperature, exhibiting good thermal stability. Aiming to fabricate a near-infrared phosphor-converted light-emitting diode device, the La2LiSbO6: 0.01Cr3+ phosphor is mixed with epoxy adhesive and cured on a green light-emitting diode chip. Under the irradiation of the fabricated light-emitting diode device, fruits and writing in the dark environment can be captured by a near-infrared camera. Hence, the La2LiSbO6: 0.01Cr3+ phosphor is promising for night vision.
研究领域:
材料科学
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光学材料
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固态照明
·
光子学
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DOI
高影响因子
JOURNAL OF LUMINESCENCE
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2016
·
IF 2.693
Renping Cao,Dedong Peng,Haidong Xu,Shenhua Jiang,Zhiyang Luo,Hui Ao,Pan Liu
Novel NaAl 11 O 17 :Mn 2+ green phosphor is synthesized by solid-state reaction method in air. The emission band peaking at ~508 nm is observed owing to the 4 T 1 → 6 A 1 ( 6 S) transition of Mn 2+ ion, and the chromaticity coordinates are (0.0725, 0.6468). The excitation band peaking at ~360, 382, 424, 450, and 490 nm are attributed to 6 A 1 ( 6 S)→ 4 E( 4 D), 4 T 2 ( 4 D), [ 4 A 1 ( 4 G), 4 E( 4 G)], 4 T 2 ( 4 G), and 4 T 1 ( 4 G) transitions of Mn 2+ ion, respectively, which indicate that NaAl 11 O 17 :Mn 2+ phosphor may be excited by (near) ultraviolet and blue LED chip. The luminous mechanism is explained by Tanabe–Sugano diagram of Mn 2+ ion. The optimal Mn 2+ doping concentration is ~3.5 mol%. The NaAl 11 O 17 :3.5%Mn 2+ phosphor shows high quantum efficiency of ~67.84% with excitation 424 nm. The lifetime decreases from 6.72 to 6.0 ms with increasing Mn 2+ concentration in the range of 0–4 mol%.
研究领域:
材料科学
·
光学
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产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Geng Chen,Yahong Jin,Lifang Yuan,Bo Wang,Jiansheng Huo,Hao Suo,Haoyi Wu,Yihua Hu,Feng Wang
Broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) hold promising potential as next-generation compact, portable, and intelligent NIR light sources. Nonetheless, the lack of high-performance broadband NIR phosphors with an emission peak beyond 900 nm has severely hindered the development and widespread application of NIR pc-LEDs. This study presents a strategy for precise control of energy-state coupling in spinel solid solutions composed of MgxZn1–xGa2O4 to tune the NIR emissions of Cr3+ activators. By combining crystal field engineering and heavy doping, the Cr3+–Cr3+ ion pair emission from the 4T2 state is unlocked, giving rise to unusual broadband NIR emission spanning 650 and 1400 nm with an emission maximum of 913 nm and a full width at half-maximum (fwhm) of 213 nm. Under an optimal Mg/Zn ratio of 4:1, the sample achieves record-breaking performance, including high internal and external quantum efficiency (IQE = 83.9% and EQE = 35.7%) and excellent thermal stability (I423 K/I298 K = 75.8%). Encapsulating the as-obtained phosphors into prototype pc-LEDs yields an overwhelming NIR output power of 124.2 mW at a driving current of 840 mA and a photoelectric conversion efficiency (PCE) of 10.5% at 30 mA, rendering high performance in NIR imaging applications.
研究领域:
材料科学
·
光电
·
光子学
·
固体物理
·
化学
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产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Yijie Wen,Shuai Hu,Chao Lin,Xin Guo,Jinshu Huang,Maohui Yuan,Kai Han
As an emerging ultrawide bandgap semiconductor, Ga2O3 nanoparticles (NPs) have garnered significant attention across various fields due to their high thermal and chemical stability. Conventional synthesis methods for Ga2O3 NPs, such as high-temperature solid-state reactions and hydrothermal processes, encounter challenges including complex procedures, limited scalability, and production of large particle sizes. In this study, we develop a straightforward approach to synthesize phase-pure, nanosized Ga2O3 NPs through flame spray pyrolysis, followed by an annealing treatment. By the incorporation of trivalent chromium ions (Cr3+) into the Ga2O3 NPs, it achieves intensive near-infrared (NIR) luminescence, specifically the R lines associated with the 4T2 → 4A2 and 2E → 4A2 transitions. These R lines are sensitive to cryogenic temperatures due to their relatively small energy difference. The synthesized Ga2O3 NPs demonstrate excellent ratiometric thermometric performance within the temperature range of 83–213 K, achieving a maximum relative sensitivity of 3.35% K–1 at 83 K based on the Boltzmann distribution of the luminescent thermometer. Furthermore, an efficient NIR phosphor-converted LED (pc-LED) device is fabricated by employing Cr3+-doped Ga2O3 NPs, which are excited by using a blue LED chip. This NIR pc-LED is subsequently applied in night vision illumination and anticounterfeiting detection.
研究领域:
材料科学
·
纳米技术
·
光学传感器
·
半导体物理
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光子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Nature Communications
·
2026
·
IF 18.1
Guo Ning,He Ke,Li Hui,Li Tianchen,Li Fengmian,Feng Jiangang,He Zhiyuan,Jiang Lei,Wu Yuchen
The facet-selective growth of shells on green InP-based quantum dots result in their inferior electron confinement capabilities, posing a challenge for the realization of completely cadmium-free quantum dot light-emitting diode displays. Here, we develop a surface energy homogenization strategy based on ligand adsorption using n-octylamine and diphenylphosphine selenide, effectively suppressing selective growth of ZnSe on the InP (111) facet, resulting in strongly electron-confined InP/ZnSe/ZnS quantum dots with a quantum yield exceeding 92% and a full-width at half-maximum of 35 nm. The resulting quantum dot light-emitting diodes achieve a peak external quantum efficiency of 23.50% and a luminance exceeding 1.4 × 10 5 cd m -2 , with a 107.5-fold increase in device lifetime. Utilized asymmetric wettability-mediated assembly strategy, we achieved quantum dot arrays with an impressive resolution of 8460 PPI. Furthermore, integrating the quantum dots into an active-matrix LED display, we successfully demonstrate the display of both static and dynamic images.
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产品关联
DOI
PubMed
高影响因子
Advanced Optical Materials
·
2026
·
IF 7.2
Xuanming Zhang,Ronggan Lu,Xiaochen Fang,Chenfeng Lin,Yongfeng Liu,Yanqiao Ding,Dongdong Yan,Xiaoyu Wang,Hao Xie,Cheng Wang,Weixiang Ye
The unique combination of strong excitonic properties and environmental stability in 0D copper halide crystals motivates the development of scalable ambient fabrication routes for high-quality emitters. Here, we report a low-temperature solvent vapor-assisted crystallization strategy to grow millimeter-sized Cs 3 Cu 2 I 5 crystals. Rb + doping effectively passivates surface defects, markedly enhancing moisture and ambient stability, with the photoluminescence intensity remaining nearly unchanged after 60 days in air. Notably, the 10% Rb + -doped crystals achieve a high photoluminescence quantum yield (PLQY) of 98.42%, demonstrating a pronounced emission enhancement. Ab initio molecular dynamics (AIMD) simulations reveal that both pristine and 10% Rb + -doped structures reside in a similar energy window (−108 to −110 eV), while the doped system exhibits a more confined trajectory, suggesting a flattened energy landscape and suppressed defect formation. Doped lattice relaxations induce slight, direction-dependent bond contraction, improving coordination integrity without major distortion, consistent with material stability and device reliability. By integrating blue-emitting Cs 3 Cu 2 I 5 :10% Rb + with green Cs 3 Cu 2 Cl 5 and red CaAlSiN 3 :Eu 2+ , we fabricate high-performance white light-emitting diodes (WLEDs) achieving CRI of 95.36, CIE chromaticity coordinates of (0.30, 0.34), and outstanding luminance of 17734.5 cd/m 2 . These findings establish a versatile ambient pathway for defect-engineered Cs 3 Cu 2 X 5 (X = I, Cl) emitters, advancing their prospects for next-generation solid-state lighting technologies.
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DOI
高影响因子
危险品化学品经营许可证（带存储）