Advanced Optical Materials
·
2024
·
IF 8
Pengbo Ding,Pui Kei Ko,Pai Geng,Dezhang Chen,Zengshan Xing,Hoi Lam Tammy Tsang,Kam Sing Wong,Liang Guo,Jonathan E. Halpert
Despite recent advances, it is still difficult to fabricate deep blue-emitting perovskite light-emitting diodes (LEDs) that are immune to the color instability caused by halide mixing. This is largely because it is still challenging to achieve bright, stable, pure bromide perovskite materials with deep blue emission. Here, a novel strategy is reported for synthesizing ultrasmall CsPbBr 3 quantum dots (QDs) under ambient conditions. Precise size control is used to tune the peak emission wavelengths, via the confinement effect, from 433 to 501 nm. These ultrasmall QDs, with sizes of 2–6 nm, exhibit ultralow trap density and stable photoluminescence quantum yields up to 94%, particularly in the deep blue spectral region (440–465 nm). QD-LEDs fabricated with these materials achieve an external quantum efficiency of 1.0% at 459 nm. The exceptional control of the emission properties demonstrated here suggests a new strategy for building stable, efficient blue QD-LEDs.
研究领域:
材料科学
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光电技术
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纳米科技
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ACS Applied Nano Materials
·
2026
·
IF 5.8
Shengjie Jiang,Mengxiang Nie,Xinyi Wang,Arui Wang,Mengyao Zhu,Qingyu Xie,Dongdong Yan,Daofu Wu,Shengnan Tian,Yongfeng Liu
Lead halide perovskite quantum dots (PeQDs) have promising research prospects in light-emitting diodes (LEDs), yet their instability in polar environments hinders practical implementation. In this work, we employ the amphiphilic ligand glycyrrhizic acid (GA) as a sole surface modifier to passivate PeQDs. Combined experimental and density functional theory (DFT) results reveal that GA strongly coordinates with unsaturated Pb sites on the perovskite surface through multidentate chelation, effectively suppressing surface defects in solution and enhancing photoluminescence efficiency and stability in polar solvents. Owing to its unique amphiphilic nature, GA enables CsPbBr3 PeQDs to achieve a high photoluminescence quantum yield (PLQY) of up to 83% in the polar solvent ethanol. Specifically, the GA-PeQDs retained ∼79% of its initial PL intensity after 360 days of storage in ethanol, underscoring their outstanding long-term colloidal and optical stability. Temperature-dependent photoluminescence spectra further confirm that the improved optical performance and stability originate from a higher activation barrier for thermally activated nonradiative recombination, indicating that GA passivation effectively suppresses thermally activated trap-assisted recombination. Finally, we fabricate a high-performance white LED with Commission Internationale de l’Eclairage (CIE) coordinates of (0.32, 0.35) by integrating the as-prepared PeQDs. This work offers a practical ligand-based strategy for obtaining efficient and stable perovskite quantum dots toward advanced photophysical applications.
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Advanced Optical Materials
·
2026
·
IF 7.2
Xuanming Zhang,Ronggan Lu,Xiaochen Fang,Chenfeng Lin,Yongfeng Liu,Yanqiao Ding,Dongdong Yan,Xiaoyu Wang,Hao Xie,Cheng Wang,Weixiang Ye
The unique combination of strong excitonic properties and environmental stability in 0D copper halide crystals motivates the development of scalable ambient fabrication routes for high-quality emitters. Here, we report a low-temperature solvent vapor-assisted crystallization strategy to grow millimeter-sized Cs 3 Cu 2 I 5 crystals. Rb + doping effectively passivates surface defects, markedly enhancing moisture and ambient stability, with the photoluminescence intensity remaining nearly unchanged after 60 days in air. Notably, the 10% Rb + -doped crystals achieve a high photoluminescence quantum yield (PLQY) of 98.42%, demonstrating a pronounced emission enhancement. Ab initio molecular dynamics (AIMD) simulations reveal that both pristine and 10% Rb + -doped structures reside in a similar energy window (−108 to −110 eV), while the doped system exhibits a more confined trajectory, suggesting a flattened energy landscape and suppressed defect formation. Doped lattice relaxations induce slight, direction-dependent bond contraction, improving coordination integrity without major distortion, consistent with material stability and device reliability. By integrating blue-emitting Cs 3 Cu 2 I 5 :10% Rb + with green Cs 3 Cu 2 Cl 5 and red CaAlSiN 3 :Eu 2+ , we fabricate high-performance white light-emitting diodes (WLEDs) achieving CRI of 95.36, CIE chromaticity coordinates of (0.30, 0.34), and outstanding luminance of 17734.5 cd/m 2 . These findings establish a versatile ambient pathway for defect-engineered Cs 3 Cu 2 X 5 (X = I, Cl) emitters, advancing their prospects for next-generation solid-state lighting technologies.
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JOURNAL OF LUMINESCENCE
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2026
·
IF 3.8
Xuan’ang Li,Li Song,Fan Yang
Metal halide perovskite light-emitting diodes (PeLEDs) have undergone rapid advancement, exhibiting enormous potential for next-generation display and lighting technologies. However, most high-performance devices are currently fabricated in inert atmospheres, and achieving high-efficiency fabrication in high-humidity ambient air remains a formidable challenge due to severe moisture interference. Herein, we report a solvent engineering strategy to overcome the obstacle of moisture and oxygen interference with crystallization kinetics in ambient air. Our investigation reveals that leveraging the strong Lewis base coordination between the N-methyl-2-pyrrolidone (NMP) solvent and the precursor, along with its better wettability to underlying substrates, effectively regulated the crystallization during the film formation and resulted in compact perovskite films with highly preferred crystallographic orientation with decreased trap states in comparison with commonly adopted dimethyl sulfoxide (DMSO). Consequently, the green PeLEDs fabricated under fully ambient conditions achieved a peak luminance of 10,700 cd/m 2 and an external quantum efficiency (EQE) of 1.33% without antisolvent assistance. These metrics are approximately one order of magnitude higher than those of the DMSO control, significantly outperforming those based on conventional solvent systems. This work unravels the regulatory role of solvent properties in the perovskite crystallization process in air, providing new insights for low-cost and simplified device fabrication technologies.
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Nature Communications
·
2026
·
IF 18.1
Guo Ning,He Ke,Li Hui,Li Tianchen,Li Fengmian,Feng Jiangang,He Zhiyuan,Jiang Lei,Wu Yuchen
The facet-selective growth of shells on green InP-based quantum dots result in their inferior electron confinement capabilities, posing a challenge for the realization of completely cadmium-free quantum dot light-emitting diode displays. Here, we develop a surface energy homogenization strategy based on ligand adsorption using n-octylamine and diphenylphosphine selenide, effectively suppressing selective growth of ZnSe on the InP (111) facet, resulting in strongly electron-confined InP/ZnSe/ZnS quantum dots with a quantum yield exceeding 92% and a full-width at half-maximum of 35 nm. The resulting quantum dot light-emitting diodes achieve a peak external quantum efficiency of 23.50% and a luminance exceeding 1.4 × 10 5 cd m -2 , with a 107.5-fold increase in device lifetime. Utilized asymmetric wettability-mediated assembly strategy, we achieved quantum dot arrays with an impressive resolution of 8460 PPI. Furthermore, integrating the quantum dots into an active-matrix LED display, we successfully demonstrate the display of both static and dynamic images.
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JOURNAL OF MOLECULAR STRUCTURE
·
2025
·
IF 4.7
Xiaoju Huang,Guihong Zhang,Chaoyong Deng,Min Zhang
Trivalent rare earth ions samarium and europium ions were doped into the prepared Gd 2 MgTiO 6 host crystal structure by high temperature solid phase method. XRD patterns show that the synthesized materials belong to the monoclinic structure with space group P 21 / n . Using UV-visible spectroscopy, the band gaps can be calculated to be 4.18, 4.15 and 3.84 eV for host, Sm 3+ and Eu 3+ -doped samples, respectively. For Sm-doped sample excited with 407 nm, the PL spectrum shows three prominent peaks at 565 nm, 603 nm and 649 nm, which are attributed to the transitions of 4 G → 5 / 2 6 H 5/2 , 4 G → 5 / 2 6 H 7/2 and 4 G → 5 / 2 6 H 9/2 , respectively. The 591 nm and 615 nm emissions of Eu 3+ doping correspond to the transitions from 5 D 0 to 7 F 1 and 7 F 2 , respectively. The optimal concentrations are 0.03 mol and 0.09 mol for Sm 3+ and Eu 3+ doping, respectively. The prepared samples can be used in the field of LEDs thanks to lower color temperature CCT=1700∼2200 K and higher color purity >97%.
研究领域:
材料科学
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光电子学
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固体物理
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无机化学
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高影响因子
Science Advances
·
2025
·Vol. 11
·期 26
·
IF 12.5
Zinan Chen,Cuixia Yuan,Shuming Chen
The thickness of quantum-dot light-emitting diodes (QLEDs) is typically limited to around 100 nm, which could lead to the formation of short-circuit paths that ultimately reduce the device performance. Here, we develop micrometer-scale-thick QLEDs by using extremely conductive ZnMgO as an electron transport layer. With a H 2 O-regulated doping method, the electron concentration of the ZnMgO film is greatly increased, which results not only in the ohmic injection but also in the trap-free electron transport. As a result, micrometer-scale-thick QLEDs, with thickness of more than 10 times that of standard QLEDs, are achieved. The demonstrated micrometer-thick red QLEDs not only can be directly built on various substrates such as Cu slabs, Ag nanowire–coated substrate, Al foils, and printing papers but also can exhibit a notably enhanced T 90 life span over 11,000 hours at 1000 candelas per square meter and an ultrahigh brightness of 3,941,000 candelas per square meter, which represent 5.03- and 4.36-fold improvements over those of conventional QLEDs.
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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
·
2025
·Vol. 131
·期 6
·1-11
·
IF 2.8
Wang Qun,Bu Ranran,Xu Changyuan,Zhao Fengjiao,Yin Hongming
Tellurite glass samples doped with Er 3+ and Eu 3+ were synthesized by the high-temperature solid phase method. The XRD diffraction pattern shows the amorphous properties of the prepared samples. The luminescence properties of glass samples were analyzed using the absorption spectrum, excitation spectrum, and emission spectrum. The energy transfer mechanism between Er 3+ ions and Eu 3+ ions was studied by changing the concentration of Eu 3+ ions, and the results were verified by measuring the luminescence decay lifetime. It is worth noting that at 380 nm excitation, Er 3+ and Eu 3+ co-doped tellurite glass exhibits remarkable tunable luminescence characteristics: by adjusting the concentration of Eu 3+ ions, the emission color can be flexibly adjusted from green to orangish-red. In addition, by effectively combining the prepared co-doped glass sample with the 380 nm GaN chip, the cold white light emission with CIE coordinates of (0.324, 0.320) was successfully achieved. According to the variable-temperature spectroscopy, at 210℃, the emission peak intensities of the co-doped Er 3+ /Eu 3+ tellurite glass at 547 nm and 613 nm are above 70% of the room-temperature luminescence intensity, demonstrating excellent thermal stability. Graphical
研究领域:
材料科学
·
光学
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JOURNAL OF ALLOYS AND COMPOUNDS
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2025
·
IF 6.3
Haifeng Zhe,Zongqi Chen,Jie Li,Yayun Zhou,Qiang Zhou,Zhengliang Wang
Modulating phase transitions in fluoride phosphors is essential for developing high-performance luminescent materials, but conventional extreme-condition methods often cause structural damage and efficiency degradation. This study proposes a thermal-pressure coupling strategy to achieve reversible Fm-3m to P6 3 mc phase transformation in K 2 SiF 6 :Mn 4+ under mild conditions. The distorted [MnF 6 ] 2- octahedra in the P6 3 mc enhance d-orbital hybridization, significantly reinforcing the zero-phonon line (ZPL). Consequently, luminescence intensity increases by 1.54-fold, external quantum efficiency (EQE) improves by 29.5%, and 90% intensity is retained at 200 °C. LED devices employing P6 3 mc phosphor sheets achieve a color rendering index (Ra) of 84.4 and luminous efficacy of 138.2 lm/W while maintaining stable Ra and correlated color temperature (CCT) across 20 - 300 mA driving currents. Notably, device temperature at 200 mA operation is reduced by 30% compared to conventional methods. This work establishes an effective approach for optimizing fluoride phosphors and advancing high-performance lighting technologies.
研究领域:
材料科学
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光学材料
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固态照明
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发光二极管
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无机荧光粉
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Light-Science & Applications
·
2025
·Vol. 14
·期 1
·1-10
·
IF 23.4
Li Haotao,Wang Jiming,Chen Shuming
The realization of solution-processed tandem quantum-dot LEDs (QLEDs) remains a technical challenge due to the limitations of inefficient interconnect layer and the damage caused by multiple solution processes. Here, we develop a high performance tandem QLED by face-to-face integrating a top-emitting QLED with a transparent QLED. The top and bottom units can be addressed independently, thereby enabling the tandem QLED to operate in series, parallel, and color-tunable modes for multifunctionality. In series mode, QLEDs demonstrate an ultra-low turn-on voltage of 3.3 V and a record-breaking external quantum efficiency of 60.7%. In parallel mode, QLEDs achieve an impressive brightness of over 4.8 × 10 6 cd m -2 . In color-tunable mode, the color, brightness, and color temperature can all be adjusted with a color tuning range of 114% NSTC. Moreover, both series and parallel connections contribute to an improved stability, resulting in a T 95 lifetime of nearly 30,000 h at 1000 cd m -2 , which is an improvement of approximately 2.8 times over control devices. Our work offers a feasible solution for achieving multifunctional tandem QLEDs with the advantages of solution processed, high efficiency, high brightness, long lifetime and full color tunability for various light source applications.
研究领域:
材料科学
·
光电技术
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Small
·
2026
·
IF 12.1
Rui Zhu,Jun Wang,Hui Li,Ruyi Luo,Junsheng Tan,Ning Guo,Jianpeng Ma,Wen Wen,Yuchen Wu,Lei Jiang,Jiangang Feng
Cadmium-free indium phosphide (InP) quantum dots (QDs) are promising emitters for environmentally benign next-generation light-emitting diodes (LEDs), yet their application is hindered by poor operational stability. This limitation arises from electron trapping and exciton quenching at the InP/ZnMgO interface, where delocalized electrons from InP QDs are readily captured by oxygen vacancies (O V ) in ZnMgO. Here, we demonstrate highly stable InP-based QD-LEDs by rationally passivating ZnMgO with organic fluoride ions (F − ). The strong binding affinity of F − effectively passivates O V sites and suppresses ion migration under electrical injections, thereby lowering defect density and mitigating nonradiative recombination at the interface. As a result, we achieve red InP QD-LEDs with a peak external quantum efficiency (EQE) of 25.35% and a maximum luminance of 137 464 cd m −2 . Remarkably, the T 95 operational lifetime at 1000 cd m −2 extends to 1504 h. Furthermore, InP QDs exhibit excellent compatibility with the micro-LED configuration, maintaining an EQE of 23.29% at a micropixel size of 2 µm. These results highlight a viable pathway toward efficient, stable, and environmentally benign InP-based micro-LEDs for next-generation near-eye displays.
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Materials Science and Engineering B-Advanced Functional Solid-State Materials
·
2026
·
IF 4.6
Feng Tong,Yi Zhu,Xiuquan Gu,Zheng Chen
Perovskite nanocrystals (PNCs) are promising luminescent materials for display applications owing to their exceptional optoelectronic characteristics. Nevertheless, their practical deployment is hindered by intrinsic high defect densities, which lead to insufficient photoluminescence quantum yields (PLQYs) and accelerated material degradation. In this study, a one-pot strategy was proposed by using nitrogen-doped graphene quantum dots (NGQDs) as surface ligands. Coupled with a polymethyl methacrylate (PMMA) coating, the NGQDs facilitate the formation of a robust composite architecture. Under optimized NGQD incorporation, the fabricated CsPbBr 3 /NGQDs/PMMA composite films display an ultra-narrow green emission peaked at 522 nm, with a full width at half maximum (FWHM) as narrow as 16 nm. More importantly, the composite exhibits significantly enhanced stability, maintaining 70% of its initial PL intensity after 7 days of water immersion or 1 h of thermal treatment at 100 °C. Such improvements are ascribed to effective defect passivation by the NGQDs and the beneficial role of their nitrogen-rich sites in promoting perovskite crystallization. As a demonstration of their potential, white light-emitting diodes (WLEDs) based on the composite realize a wide color gamut, covering 131% of the NTSC standard and 98% of the Rec. 2020 standard. This work thus proposes a novel one-pot in situ passivation approach, providing an effective route to concurrently address the efficiency and stability issues of PNCs.
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