INORGANIC CHEMISTRY
·
2023
·
IF 4.6
Huimin Li,Ran Pang,Lihong Jiang,Da Li,Su Zhang,Hongjie Zhang
Current ultraviolet (UV) light sources are dominated by blacklights that contain mercury vapor. Improper disposal or accidental breakage of these lamps can lead to serious pollution. Phosphor-converted light-emitting diodes (pc-UV-LEDs) have the potential to replace these mercury-containing lamps, making them more environmentally friendly. To improve the adjustability of the UV emission and reduce production cost, a series of UV-emitting phosphors were developed by introducing Bi3+ in BaSc2Ge3O10 (BSGO) which has a broad bandgap of 5.88 eV. The phosphor exhibits a negative thermal quenching effect that results from thermally activated defects. Despite this, the emission intensity of the phosphor sustains up to 107% at 353 K and 93% at 473 K compared to the intensity at 298 K. The internal quantum efficiency and the external quantum efficiency reach 81.0 and 49.32%, respectively, under 305 nm excitation. A pc-UV-LEDs were fabricated by combining the phosphor with a chip. The resulting device emits a broad band ranging from 295 nm to 450 nm, covering part of the UVB (280 nm ∼ 315 nm) and UVA (315–400 nm) regions. Our work has the potential to promote the replacement of current blacklights, including high-pressure mercury lamps and fluorescent low-pressure mercury lamps, by pc-UV-LEDs in applications such as bug zappers and tanning beds. Moreover, the phosphor exhibits desirable long persistent luminescence, which extends its prospect of applications.
研究领域:
材料科学
·
光子学
·
固态照明
·
发光材料
·
光电子学
✓ 已验证
DOI
高影响因子
Light-Science & Applications
·
2019
·Vol. 8
·期 1
·1-9
·
IF 14
Zhao Ming,Liao Hongxu,Molokeev Maxim S.,Zhou Yayun,Zhang Qinyuan,Liu Quanlin,Xia Zhiguo
Phosphor-converted white LEDs rely on combining a blue-emitting InGaN chip with yellow and red-emitting luminescent materials. The discovery of cyan-emitting (470–500 nm) phosphors is a challenge to compensate for the spectral gap and produce full-spectrum white light. Na 0.5 K 0.5 Li 3 SiO 4 :Eu 2+ (NKLSO:Eu 2+ ) phosphor was developed with impressive properties, providing cyan emission at 486 nm with a narrow full width at half maximum (FWHM) of only 20.7 nm, and good thermal stability with an integrated emission loss of only 7% at 150 °C. The ultra-narrow-band cyan emission results from the high-symmetry cation sites, leading to almost ideal cubic coordination for UCr 4 C 4 -type compounds. NKLSO:Eu 2+ phosphor allows the valley between the blue and yellow emission peaks in the white LED device to be filled, and the color-rendering index can be enhanced from 86 to 95.2, suggesting great applications in full-spectrum white LEDs.
研究领域:
材料科学
·
光学工程
·
固态照明技术
✓ 已验证
DOI
高影响因子
ADVANCED MATERIALS
·
2026
·
IF 29.1
Mengqi Zhang,Lin Zhang,Xiong Chen,Yuyu Jing,Fei Huang,Delin Kong,Yuxuan Li,Zhitao Xue,Chengyang Liang,Xuejiao Sun,Haizheng Zhong,Jianjun Tian
Metal halide perovskite nanocrystals (NCs) are promising materials for next-generation ultrahigh-definition displays through achieving efficient micropattern light-emitting diodes (LEDs). However, the micro-devices exhibited inferior electroluminescent (EL) efficiency, which likely arose from the fact that effective surface reconstruction of the NCs is often impeded by challenges in defect management. In this work, we developed a phase-transfer catalytic (PTC) strategy for the surface reconstruction of CsPbI 3 NCs, utilizing tetrabutylammonium iodide (TBAI) as a catalyst to mediate the incorporation of the solid-phase ligand guanidinium iodide (GuI). The mechanism is rooted in a specific molecular interaction between TBAI and GuI, which disrupts the strong hydrogen-bonding network of GuI molecules, effectively inhibits excessive GuI accumulation, and prevents micelle formation. As a result, the LEDs achieved peak external quantum efficiency (EQE) of 26.5% and exhibited more than a tenfold increase in operational lifetime. Furthermore, this methodology enabled the fabrication of high-resolution micro-LEDs with 1588 pixels per inch (PPI) and an EQE of 20.6%, which exhibiting bright and stable electroluminescence, further highlighting the versatility and scalability of the approach for advanced display technologies.
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DOI
高影响因子
Laser & Photonics Reviews
·
2026
·
IF 9.7
Zeyu Miao,Yinghui Wang,Lei Wang,Wenxu Yin,Ning Wang,Tom Wu,Xuyong Yang,Xiaoyu Zhang,Jiaqi Zhang
Two-dimensional (2D) tin (Sn)-based perovskites are promising lead-free emitters for red light-emitting diodes (LEDs), but their intrinsically low carrier mobility and poor film morphology severely limit large-area performance. Here, we introduce a one-step antisolvent-assisted approach that disperses amino-functionalized multi-walled carbon nanotubes (CNTs) along the grain boundaries of phenethylammonium tin iodide (PEA 2 SnI 4 ) films. The CNTs provide conductive pathways that accelerate carrier diffusion, while their ammonium groups regulate crystallization and improve film uniformity. Transient absorption microscopy and transport measurements confirm that carrier conduction is more than doubled in CNT-modified films. As a result, large-area (150 mm 2 ) PEA 2 SnI 4 LEDs achieve a maximum external quantum efficiency of 2.35% and a peak luminance of 5028 cd m −2 , exceeding the threshold for outdoor-readable displays. This grain-boundary engineering strategy directly addresses the transport and morphology limitations of 2D Sn-based perovskites and establishes a scalable route to high-performance, lead-free optoelectronics.
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产品关联
DOI
高影响因子
Russian Journal of Physical Chemistry A
·
2026
·Vol. 100
·期 2
·262-268
·
IF 0.7
Ying Lin,Gao Teng,Huang Guobin,Liu Mengli,Cao Qinyu,Zhuang Naifeng,Chen Wenjie
A series of Sm 3+ -doped CaGdAlO 4 (CGA) phosphors were successfully synthesized via a high-temperature solid-state method. The crystal structure and luminescent properties of the samples were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and fluorescence spectrometry, with Rietveld refinement confirming a tetragonal crystal structure (consistent with observed XRD patterns).The CGA:0.02Sm 3+ phosphor can be efficiently excited by blue-violet light (408 nm), emitting intense orange-red luminescence. The optimal Sm 3+ doping concentration is 2 mol % (maximum luminous intensity), and the concentration quenching mechanism is attributed to dipole-dipole interactions. The optimal sample exhibits excellent thermal stability in the range of 298–523 K, with an activation energy of 0.11 eV. When used as a red component in white LED (w-LED) devices, CGA:0.02Sm 3+ delivers outstanding performance: a high color rendering index (Ra = 91.2) and CIE chromaticity coordinates of (0.3148, 0.3488), indicating its potential as an orange-red phosphor for lighting and display applications. Additionally, first-principles calculations based on density-functional theory (DFT) were performed to investigate the electronic structures and density of states of pure CGA and Sm 3+ -doped CGA.
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DOI
高影响因子
Communications Materials
·
2026
·
IF 9.1
Li Qinghua,Gao Tianfu,Rao Xinhao,Ren Zhelei,Duan Haodi,Xie Xiaomin,Liao Jiaxin,Xue Shuwen,Xu Bin,Jin Xiao,Zhao Weifeng,Bai Jinke
Translating advanced luminescent materials into field-deployable screening tools remains a core challenge, demanding synergy between advanced optical materials and device engineering. Here, we demonstrate a portable dual-mode near-infrared semi-quantitative screening device. the luminescence performance of the core emitting materials, specifically lead-free Nd³⁺/Yb³⁺ co-doped Cs₂NaYCl₆ double perovskite phosphors, was first optimized through a machine-learning (ML) guided approach. Subsequently, these optimized phosphors were integrated to enable the device. Specifically, the Nd³⁺-doped emitter targets the 885 nm characteristic absorption band of alcohol while exhibiting anomalous thermal quenching, whereas the Nd³⁺/Yb³⁺ variant leverages 78.66% energy transfer efficiency to yield stable 985 nm emission (70% retention at 500 K) matching the characteristic absorption band of water. These optimized phosphor-converted LEDs were integrated into a compact detector featuring a coaxial dual-disc stepper mechanism and a customized three-stage circuit that amplifies faint optical signals into a five-level visual indicator. This configuration enables rapid screening of alcohol (30–60%) and water content (45–100%). Validated on commercial samples, this work establishes a holistic platform bridging high-precision instrumentation and real-world portability.
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产品关联
DOI
高影响因子
Nature Communications
·
2025
·Vol. 16
·期 1
·1-12
·
IF 15.7
Zheng Yizhen,Lin Xing,Li Jiongzhao,Chen Jianan,Wu Wenhao,Song Zixuan,Gao Yuan,Hu Zhuang,Wang Huifeng,Ye Zikang,Qin Haiyan,Peng Xiaogang
Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptimal and encapsulation-resin-sensitive performance of quantum-dot light-emitting diodes. A heavily n-doped nanocrystalline electron-injection layer—exhibiting ohmic transport with 1000 times higher electron conductivity and improved hole blockage—is developed via a simple reductive treatment. The resulting sub-bandgap-driven quantum-dot light-emitting diodes exhibit optimal efficiency and extraordinarily-high brightness, surpassing current benchmarks by at least 2.6-fold, and reaching levels suitable for quantum-dot laser diodes with only modest bias. This breakthrough further empowers white-lighting quantum-dot light-emitting diodes to exceed the 2035 U.S. Department of Energy’s targets for general lighting, which currently accounts for ~15% of global electricity consumption. Our work opens a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices.
研究领域:
材料科学
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光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
INORGANIC CHEMISTRY
·
2025
·
IF 4.7
Hangzhang Kou,Fanlei Qin,Jianfeng Wang,Esmaeil Heydari,Gongxun Bai
Near-infrared (NIR) wireless communication has been widely investigated because of its fast transmission speed and good penetration barrier performance. Despite their promising characteristics, the implementation of these materials is substantially limited by thermal degradation effects. To address this challenge, we developed Cr3+-activated gadolinium gallate phosphors that exhibit an emission bandwidth of 92.8 nm at half-maximum intensity while maintaining 86.3% of the initial luminous intensity at 150 °C. Furthermore, phosphor-converted light-emitting diodes (pc-LEDs) were manufactured, attaining a 1060 mW NIR output power and 360 mA current. The device was used to test the signal transmission effect using the prepared NIR pc-LEDs as the light source. In the case of input sine wave, inverse sine wave, and triangle wave, the transmission of the waveform was realized, and its penetration performance was tested. The experimental findings demonstrate that the proposed material exhibits promising applications in NIR optical communication systems.
研究领域:
材料科学
·
光学通信
·
固态照明
·
光子学
·
半导体器件
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Light-Science & Applications
·
2025
·Vol. 14
·期 1
·1-10
·
IF 23.4
Song Yusheng,Cao Sheng,Wang Yijie,Chen Mingyan,Zhang Yu,Li Qiuyan,Han Shulin,Liang Yi,Cai Lei,Zhao Jialong,Zou Bingsuo
Colloidally quantum-confined CsPbBr 3 nanoplatelets (NPLs) exhibit narrow emission linewidths and thickness-tunable photoluminescence, making them ideal candidates for deep-blue perovskite light-emitting diodes (PeLEDs). However, the weak surface coordination of conventional long-chain ligands ( e.g ., oleylamine and oleic acid) leads to face-to-face stacking of the NPLs, resulting in undesirable emission redshifts in their PeLEDs. Herein, we report an efficient deep-blue PeLED based on colloidal CsPbBr 3 NPLs that meet the Rec.2020 color standard, enabled by an acid-assisted ligand passivation strategy. Surface chemical analysis reveals that hydrobromic acid facilitates proton-assisted stripping of the long-chain ligands, followed by the formation of stable Pb-S-P coordination bonds with thio-tributylphosphine, which exhibits a high adsorption energy (E ads = -1.13 eV). This approach significantly improves surface defect passivation, yielding a photoluminescence quantum yield of 96% and a narrow 13 nm full-width-at-half-maximum deep-blue emission. Enhanced exciton recombination and reduced defect state density are evidenced by a prolonged photoluminescence lifetime and slower absorption bleach recovery kinetics. The resulting PeLEDs achieve record-breaking performance among CsPbBr 3 NPL-based systems, with a maximum external quantum efficiency of 6.81% at 461 nm, a peak luminance of 143 cd m -2 , and the CIE color coordinates (CIE-y = 0.046) that comply with Rec.2020 standards. This work presents an effective strategy for developing efficient and stable deep-blue perovskite emitters, demonstrating significant potential for the commercialization of perovskite nanomaterials in next-generation ultra-high-definition displays.
研究领域:
材料科学
·
纳米科技
·
光电子学
·
显示技术
·
半导体物理
·
表面化学
·
光学材料
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2025
·
IF 26.8
Xiuling Li,Yuechuan Bi,Xiang Guan,Jiaqi Wang,Jinli Liu,Yingjie Zhao,Chunli Zhao,Zhuojian Li,Shurui Chi,Junnan Wang,Renjing Chen,Zixun Zhao,Zemin Wang,Xin Tong,Ninggui Ma,Han Liu,Zhiming Wang,Zongwen Liu,Yang Ren,Zhanhua Wei,Kebin Lin
Eco-friendly CsSnI 3 -based perovskite light-emitting diodes (PeLEDs) with the emission peak extending to the near-infrared-II (NIR-II) region hold tremendous potential for applications in biological monitoring, night vision, and optical communications. However, the various defects caused by the instability of Sn 2+ within the CsSnI 3 film, and the non-equilibrium carrier injection rate in the devices are the two major factors that limit the device performance. Here, we report high-performance NIR-II CsSnI 3 -based PeLEDs achieved by employing functional sulfaguanidine (SG) molecules. Due to the strong S═O─Sn coordination bonds, NH 2 ···I − hydrogen bonds could be formed between CsSnI 3 and SG, which effectively eliminated various Sn(II)-related defects in the CsSnI 3 film. Moreover, the SG molecules significantly improved the morphological uniformity and regulated the carrier injection balance, resulting in more balanced carrier injection that enhanced the effective radiation recombination rate. Consequently, the optimized CsSnI 3 -SG PeLEDs achieved a breakthrough external quantum efficiency (EQE) of 8.1%, which is the highest efficiency reported for CsSnI 3 -based PeLEDs to date.
研究领域:
光电子学
·
材料科学
·
钙钛矿发光二极管
·
近红外光子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2025
·
IF 26.8
Zhengchang Xia,Ji Jiang,Aoxing Wang,Di An,Zhouxin Li,Huaiwen Zheng,Zhigang Yin,Gufeng He,Jingbi You,Xingwang Zhang
Metal halide perovskites hold great promise for display technologies owing to their excellent optoelectronic properties. Recent advances in perovskite light-emitting diodes (PeLEDs) have improved their efficiency, brightness, and operational stability, but simultaneously boosting these metrics remains challenging. Additionally, other critical metrics such as power consumption, color purity, and gamut have received little attention. Here, a co-additive approach is proposed to regulate the perovskite crystallization, enabling the synthesis of CsPbBr 3 &Cs 4 PbBr 6 dual-phase nanocrystals (NCs) and the formation of nanoscale concave-convex morphology, as well as to change its semiconductor polarity by molecular doping. Due to the reduced defect density, balanced charge injection, and improved light extraction efficiency, the PeLEDs achieve a remarkable external quantum efficiency (EQE) of 28.2%, a high brightness of over 150000 cd m −2 and a T 50 lifetime of 4291 h, along with an ultra-narrow spectral linewidth (16.5 nm), an ultra-low driving voltage (1.9 V), and a superior Rec. 2020 color gamut coverage (CGC) of 92%.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Chao Zhong,Kuibao Yu,Yuan Qie,Yongshen Yu,Yongyi Lu,Ge Deng,Tailiang Guo,Hailong Hu,Fushan Li
Colloidal quantum dots (QDs) have shown great promise in the development of high-resolution displays for near-eye visual communication with the outside world. However, achieving full-color high-precision assembly of QDs at the nanoscale remains a critical challenge. This study proposes a novel strategy for the region-selective assembly of QDs for achieving ultra-high-resolution light-emitting devices. This approach leverages interface-assembled ultrathin surface microstructures to create specific wettability patterns, guiding the selective assembly of QDs on their surfaces. Ultimately, an ultra-high-resolution 36 599 pixels per inch (PPI) light-emitting device is successfully realized, with a record-high external quantum efficiency (EQE) of 18.74%. The addition of a molecular microstructure enhances the fidelity of the assembled QDs pattern, providing nearly a two-fold increase in contrast ratio while effectively suppressing device leakage current. Additionally, the assembly process is compatible with photo-crosslinking technology, resulting in a full-color light-emitting device with an EQE of 11.01%. Our strategy paves a simple and effective way for advancements in high-performance nano-display technology.
研究领域:
纳米技术
·
显示技术
·
光电子学
·
材料科学
·
自组装
·
量子点
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）