Advanced Optical Materials
·
2025
·Vol. 13
·期 17
·2500216
·
IF 7.2
Xin Wang,Le-Yang Dang,Xu Zhang,Jia-Qi Zhu,Gui-Gen Wang
Doping can effectively adjust the energy band structure of a semiconductor, thereby influencing its electrical and optical properties. In this study, density functional theory is employed to calculate the crystal structure, electronic configurations, energy bands, and optical properties of tellurium-doped Bi 2 O 2 Se (Bi 2 O 2 Se 1-x Te x ), demonstrating that Te substitution lowers the conduction band, reducing the bandgap. Then 2D Bi 2 O 2 Se 1-x Te x nanosheets are synthesized via organic ion template-guided solution growth method, with Te doping controlled by the Te/Se molar ratio. Optical spectroscopy confirmed that tellurium doping significantly modulates the electronic properties of Bi 2 O 2 Se. When the doping molar concentration is 30%, its bandgap decreases to 0.57 eV. Therefore, Bi 2 O 2 Se 1-x Te x nanosheet-based photodetector demonstrates obvious enhancement of the photoelectric response in the near-infrared region. Notably, Bi 2 O 2 Se 0.7 Te 0.3 photodetector demonstrates broadband photosensitivity across 650–1550 nm, with high responsivity of 32.87 A W −1 and enhanced detectivity of 8.89 × 10 9 Jones at 1060 nm. The device also features a short response time of 16.8/11 µs at 1550 nm. Moreover, the photo-response of the detector shows reliable working stability. Finally, the photodetector is utilized for single-pixel imaging, showcasing its high-contrast infrared light detection capability. These results indicate that Bi 2 O 2 Se 1-x Te x is a promising material for high-sensitivity infrared light detection applications.
研究领域:
材料科学
·
凝聚态物理
·
光学工程
✓ 已验证
产品关联
DOI
高影响因子
Crystals
·
2017
·Vol. 7
·期 9
·257
·
IF 1.566
Rui Liu,Xing Tan,Guangkun Ren,Yaochun Liu,Zhifang Zhou,Chan Liu,Yuanhua Lin,Cewen Nan
Polycrystalline Bi2Se3−xTex(x = 0~1.5) samples were prepared by self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) and their thermoelectric properties were investigated. The SHS-SPS process can shorten the time with few energy consumptions, and obtain almost pure Bi2Se3-based phases. Consequently, the Se vacancies and anti-site defects contribute to the converged carrier concentration of ~2 × 1019cm−3while the increased carrier effective mass enhances the Seebeck coefficient to more than −158 μV K−1over the entire temperature range. The lattice thermal conductivity is suppressed from 1.07 Wm−1K−1for the pristine specimen to ~0.6 Wm−1K−1for Te-substitution samples at 300 K because of point defects caused by the difference of mass and size between Te and Se atoms. Coupled with the enhanced power factor and reduced lattice thermal conductivity, a highZTof 0.67 can be obtained at 473 K for the Bi2Se1.5Te1.5sample. Our results reveal that Te-substitution based on the SHS-SPS method is highly-efficient and can improve the thermoelectric properties of Bi2Se3-based materials largely.
研究领域:
材料科学
·
凝聚态物理
·
无机非金属材料
·
能源材料
·
热电转换
✓ 已验证
DOI
高影响因子
CHINESE JOURNAL OF CHEMISTRY
·
2021
·Vol. 39
·期 8
·2141-2146
·
IF 6
Chuqiao Hu,La Li,Guozhen Shen
Main observation and conclusion Ti 3 C 2 MXene serving as superior electrical conductors presents more specific performance such as transparency, conductivity than gold (Au), and even could form a heterostructure with active materials of the functional devices. Here, a Ti 3 C 2 MXene-Te microplate van der Waals heterostructure based transparent near-infrared photodetector (PD) is exploited. Compared with Au-Te PD, the on-off ratio of the Ti 3 C 2 -Te PD is improved by seven orders of magnitude and reaches 9.51 × 10 7 under 1064 nm laser illuminations. Benefiting from the utilization of flexible PET substrate and Ti 3 C 2 conductors in manufacturing PD devices, the Ti 3 C 2 -Te PD exhibits excellent flexibility with no noticeable response change after being bent for different states and times. Moreover, 63% transmittance of the fabricated PD devices over the 500—1000 nm wavelength range is obtained. All the above results demonstrate the tremendous potential in wearable optoelectronics.
研究领域:
材料科学
·
光电子学
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2014
·
IF 2.367
Zhitao Shen,Chunhua Luo,Rong Huang,Yiting Wang,Hui Peng,Jadranka Travas-sejdic
In this work, we systematically investigated the one-pot aqueous synthesis conditions of CdHgTe nanocrystals (NCs) using sodium tellurite (Na 2 TeO 3 ) as the Te source, and found that the added content of Hg 2+ and the initial pH value of reaction solutions significantly affected the photoluminescence quantum yield (PL QY) of alloyed CdHgTe NCs. When the concentration of Cd was 1.0 mmol L −1 , the mole ratio of Cd/Te/Hg/MPA was 1:0.5:0.05:2.4, and the initial pH value of the reaction solution was about 8.78, the PL QY of as-prepared CdHgTe NCs was up to 45%. Characterization by HRTEM and XRD confirmed the crystalline nature of CdHgTe NCs. Compared to other synthetic approaches of CdHgTe NCs, our experimental results indicate that Na 2 TeO 3 could be an attractive alternative Te source to directly synthesize CdHgTe NCs in aqueous media.
研究领域:
材料科学
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2022
·Vol. 33
·期 19
·15894-15903
·
IF 2.779
Hu Zeqing,Xu Huihong,Lin Yangjian,Liu Yu,Xu Junsheng,Li Zhou,Song Jiming
Currently, Cu 2 GeS 3 has been obtained through solid-state reaction. However, the pure phase Cu 2 GeS 3 synthesized still faces challenges due to the low boiling point of the sulfur element. Herein, we have prepared pristine Cu 2 GeS 3 by a two-step method. Firstly, the pure phase GeS 2 was synthesized by solvothermal method and then used the freshly as-synthesized GeS 2 as raw material to react with copper powder to fabricate pure phase Cu 2 GeS 3 . Further, the thermoelectric properties of Cu 2 GeS 3 crystal have been explored. At room temperature, the electric resistance value measured by multimeter was ~ 2634 Ω for intrinsic Cu 2 GeS 3 crystal, which exceeded the instrument (electrical conductivity/Seebeck coefficient) test range of 0–2000 Ω, so there is no relevant report in the thermoelectric field about Cu 2 GeS 3 crystal. In order to improve its conductivity, Cu 2 GeS 3 crystal is alloyed with a small amount of Te powder to obtainable Cu 2 GeS 3− x Te x samples, which have obvious thermoelectric properties. By adjusting the content of Te, finally, the electrical conductivity of the Cu 3 GeS 2.6 Te 0.4 sample reached 364.20 S m −1 and the figure-of-merit ZT max value of ~ 0.12 were obtained at 816 K.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
ACS Nano
·
2023
·
IF 17.1
Hongmin Liu,Pankun Wu,Ronghao Wang,Huanjiang Meng,Yaqi Zhang,Weizhai Bao,Jingfa Li
The combination of photo-driven self-powered supplies and energy storage systems is considered as a promising candidate to solve the global energy dilemma. The photo-absorber and the energy storage material are integrated into the photocathode to effectively achieve a high-energy and high-efficiency energy system. In this work, we report the customized Janus-jointed photocathode design (integrating with highly efficient halide perovskite and tellurium composite electrode) and introduce it into the aqueous zinc–tellurium battery. The well-matched energy level of the Janus-jointed photocathode ensures the conversion of the photoenergy into electrical energy by transferring the photoexcited charge between each. As expected, in the photo-assisted recharging model, the decreased 0.1 V charge voltage and the extra 362 mA h g–1 at 100 mA g–1 demonstrated the significant merits of saving energy for such a photo-rechargeable Zn–Te (PRZT) battery. When the current density is 1000 mA g–1, the specific capacity of the prepared photocathode is 83% higher than that under dark conditions. More importantly, the photogenerated charge by the perovskite under light illumination could also directly photocharge the battery with no external current, indicating the self-powering traits. The rational design in this work is believed to provide a sustainable mode for efficient charging of the aqueous PRZT battery.
研究领域:
材料科学
·
能源工程
·
化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF LUMINESCENCE
·
2022
·
IF 4.171
Shuaichen Si,Xiaoxuan Guo,Weijiang Gan,Xuejie Zhang,Bang Lan,Man-Rong Li,Jing Wang
Lead-free perovskite variants have attracted wide interest because of the lead-free feature and broadband emission originated from self-trapped exciton (STE), which show great advantages in lighting applications. Especially the tetravalent Te-doped A 2 B(IV)X 6 perovskite variants, which have efficient excitation in the blue range and strong emission in the yellow region as well as high photoluminescence quantum yield , is particularly suitable for solid-state lighting. Despite these fascinating properties, it is still not suitable for high-power illumination due to its poor thermal resistance and severe light saturation feature at high laser power density. Herein, we develop a lead-free perovskite variant Rb 2 SnCl 6 :Te based phosphor-sapphire composite (PSC) fused with low-melting glass through a simple screen-printing and sintering process . The as-prepared PSC shows yellow-green emission at 570 nm, due to the combination of Te luminescent center and Jahn-Teller-like STE, and exhibits a high thermal conductivity of 37.06 W m −1 K −1 . Benefitted from the high thermal conductivity of the sapphire substrate , the PSC exhibits the great improvement in light saturation behavior, heat dissipation, and chromaticity stability withstand the high-power blue laser , compared to Rb 2 SnCl 6 :Te phosphor, finally contributing to an excellent PLQY of 70.3%. In addition, by combining the PSC with the blue laser, a warm white light with a CIE chromaticity coordinate of (0.368, 0.344), and a correlated color temperature of 4129 K is achieved. These results demonstrate that this simple and low-cost fabrication method is expected to be widely used for various phosphors and the PSC can own excellent application prospects in high-power laser-driven lighting.
研究领域:
材料科学
·
光学工程
·
固态照明
✓ 已验证
DOI
高影响因子
Advanced Electronic Materials
·
2018
·Vol. 5
·期 1
·1800548
·
IF 5.466
Changzeng Yan,Tianhang Yu,Chao Ji,Dae Joon Kang,Ning Wang,Rong Sun,Ching-Ping Wong
Ever-increasing packaging and power densities of modern electronic devices in the present “More-than-Moore” technology era demand higher performance thermal interface materials (TIMs). However, conventional composite TIMs require higher loading to achieve better thermal conductive property, resulting in a mechanical problem. The poor wetting property of matrix loading materials further increases the interfacial thermal resistance (ITR). In this work, a one-step hydrothermal method is employed to grow 2D molybdenum disulfide (MoS 2 ) nanosheets on a tellurium (Te) nanowire skeleton and silver (Ag) nanoparticles are further decorated on MoS 2 nanosheets via the photoreduction method. The in-plane thermal conductivity of the final nanocomposite reaches as high as 10.4 W m −1 K −1 , which is 4,160% higher than that of a pure epoxy resin and one order of magnitude higher than that of conventional polymeric nanocomposites. The 3D interconnected heat transferring network of Te/MoS 2 /Ag greatly enhances the thermal stability of the composite in practical applications. The rational materials design concept may contribute to the development of new types of high-performance thermal management materials.
研究领域:
材料科学
·
热管理技术
✓ 已验证
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2026
·
IF 6.6
Wendi Huang,Beibei Huang,Jingjun Bi,Junzhou Chen,Yufan Chen,Jianjun Yang,Jian Zhong,Ping Liu,Qingguo Gao
Recently, tellurium (Te), a p-type semiconductor material, has attracted tremendous interest in electronics and large-scale integrated circuits owing to its high hole mobility and excellent air stability. Although evaporated Te thin films have shown great potential for large-scale p-type transistors, further research is needed to improve the quality of Te thin films and enhance their electrical performance. In this work, we demonstrate that a simple ultraviolet/ozone (UV-O 3 ) pretreatment of Si/SiO 2 substrates can significantly reduce surface roughness and improve crystallinity in TeO x /Te films, as confirmed by grazing-incidence X-ray diffraction (GIXRD), Raman spectroscopy and atomic force microscopy (AFM). The improved structural properties lead directly to a remarkable improvement in device electrical performance. The hole mobility of devices fabricated on UV-O 3 -pretreated substrates increases markedly from 27.4 cm 2 /V·s to 75.8 cm 2 /V·s compared with those on untreated substrates. In addition, the subthreshold swing, hysteresis, contact resistance, interface trap state density and threshold-voltage stability under both negative bias stress (NBS) and positive bias stress (PBS) are all substantially improved. This work provides a simple and easily implementable approach to enhance the electrical performance of p-type Te-based transistors, offering valuable guidance for their application in next-generation electronics.
✓ 已验证
产品关联
DOI
高影响因子
Science Advances
·
2026
·Vol. 12
·期 13
·
IF 13.9
Yuxiang Zhan,Kunpeng Zhao,Hexige Wuliji,Yifan Yuan,Xiang Liu,Tian-Ran Wei,Ting Zhang,Min Zhu,Xun Shi
(Ag,Cu) 2 (S,Se,Te) alloys, as rare examples of p-type inorganic ductile semiconductors, have emerged as promising candidates for wearable electronics because of their mechanical flexibility and favorable processability. However, the multicomponent nature of this system introduces diverse microstructures and intricate defect landscapes that complicate the optimization of thermoelectric performance. Here, we reveal the presence of compositionally inhomogeneous yet structurally coherent nanoscale chemical fluctuations within this alloy system. These fluctuations, together with abundant dislocations and twin boundaries, serve as efficient phonon scattering centers to suppress the lattice thermal conductivity to approach glass-like levels. Concurrently, tuning the cation ratios and vacancies allows for precise control over the carrier concentration and thereby leads to enhanced power factors. Last, a peak zT of 0.98 at 360 kelvins is achieved, marking a record for Ag-based ductile thermoelectrics. This study highlights the essential role of chemical fluctuations in modulating phonon and charge transports and offers valuable insight into the microstructure-defect–property interplay in ductile materials.
✓ 已验证
产品关联
DOI
PubMed
高影响因子
INORGANIC CHEMISTRY
·
2026
·
IF 4.6
Huanran Zheng,Yuchao Wang,Jing Zhang,Yu Bai,Yingbi Chen,Peiyao Yang,Md Raziun Bin Mamtaz,Danni Deng,Zechao Zhuang,Houzheng Ou,Meng Wang,Guozhao Fang,Haozhi Wang,Xiang Xiong,Dingsheng Wang,Chuan Zhao,Yongpeng Lei
The high desorption energy barrier for OH– hinders the improvement of the oxygen reduction reaction (ORR) and related devices. Here, an Fe-based atom pair catalyst for ORR is discovered through high-throughput density functional theory calculations. The atomic Te around the Fe1–N4 site (Te1–N2–Fe1–N2) served as an electron pump to achieve charge dilution, contributing to an onset potential of 1.03 V and a half-wave potential of 0.94 V. Moreover, a kinetics current density of 32.4 mA cm–2 and remarkable durability up to 20000 continuous electrolysis cycles (1/4 activity decay that of the Fe1–N4 site) were achieved. An ab initio molecular dynamics simulation revealed the formation process of Fe–Te dual atoms. In situ characterization and comparative experiments verify that the charge dilution toward a single Fe site around atomic Te resulted in promoted O2 conversion and accelerated *OH desorption. The corresponding Al-air batteries showed an open-circuit potential of 1.62 V, a power density of 138.1 mW cm–2, and stable voltages during the long-term discharging process (446 h at 10 mA cm–2 and 270 h at 20 mA cm–2). The study demonstrates the single-atom electron pump as an effective strategy for handling the charge density around single-atom sites for electrocatalysis.
✓ 已验证
DOI
PubMed
高影响因子
APPLIED CATALYSIS B-ENVIRONMENTAL
·
2025
·
IF 21.1
Bonan Li,Xi Zhang,Mengxue Chen,Xi Huang,Xiao Fang,Yanfang Yang,Yuanyuan Li,Baochun Ma,Yong Ding
Single-component metallic Te photocatalysts suffer from rapid oxidation in air, while sulfide-based SnS 2 is prone to photocorrosion under prolonged illumination, both severely limiting their photocatalytic efficiency. To address these challenges, we designed an S-scheme heterojunction by uniformly loading SnS 2 nanosheets onto Te nanowires (Te@SnS 2 ). This heterostructure not only suppresses Te oxidation but also facilitates efficient charge separation via the S-scheme mechanism. Further integration of [Co 4 (H 2 O) 2 (PW 9 O 34 ) 2 ] 10- (Co4POM) onto Te@SnS 2 yields the Te@SnS 2 -Co4POM photocatalyst, where Co4POM serves as a hole co-catalyst to enhance activity and inhibit SnS 2 photocorrosion. The system employs two discrete charge-transfer channels, with electrons separated at the Te@SnS 2 S-scheme heterojunction and holes migrating from SnS 2 to Co4POM, thereby spatially separating reduction and oxidation sites and markedly enhancing carrier separation, catalytic activity and durability. The multi-channel charge transfer pathways enabled by Te@SnS 2 -Co4POM synergize component interactions, achieving a CO production rate of 92.6 μmol g −1 h −1 with 97.7 % selectivity in gas-solid CO 2 reduction, alongside effective coupling of CO 2 photoreduction and water photooxidation. In situ DRIFTS, quasi-in situ XPS and irradiated KPFM studies confirm the S-scheme electron transfer in Te@SnS 2 and reveal Co4POM’s role in establishing multi-channel charge transport. This work demonstrates a rational strategy to overcome stability and efficiency bottlenecks in photocatalysis through multi-component charge channel engineering.
研究领域:
材料科学
·
光催化
·
环境科学
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）