ACS Applied Materials & Interfaces
·
2017
·
IF 7.504
Wenhao Fan,Shaoping Chen,Bo Zeng,Qiang Zhang,Qingsen Meng,Wenxian Wang,Zuhair A. Munir
Solid solutions of Mg2Si0.6Sn0.4–xBix with 0 ≤ x ≤ 0.03 were prepared by a one-step synthesis and consolidation method, using MgH2 as a starting material. The thermoelectric properties of these samples were evaluated over the temperature range 300–775 K. Figure of merit, zT, values were determined over this range for all compositions and found to increase with temperature reaching a value of 1.36 at 775 K for samples with x = 0.02. Examination of the components of the total thermal conductivity showed that the bipolar thermal conductivity is suppressed by an increase in the band gap, resulting from solid solution formation, and by low minority carrier mobility. The suppression of the bipolar thermal conductivity is believed to be the consequence of charged grain boundaries.
研究领域:
材料科学
·
热电学
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DOI
PubMed
高影响因子
CERAMICS INTERNATIONAL
·
2023
·
IF 5.2
Yu Wang,Jing Feng,Zhen-Hua Ge
Bismuth sulfide-based thermoelectric materials have attracted considerable interest owing to their abundance of raw materials and non-toxicity. However, their poor electrical properties, particularly their conductivity, have limited their practical applications. In this work, a melting method and spark plasma sintering were employed to synthesize bulk Bi 2 S 3 materials. The dopant MoCl 5 was used to regulate the electrical properties of Bi 2 S 3 . The results showed that Mo can significantly enhance the conductivity of Bi 2 S 3 compared to other transition metals. The doped sample exhibited an almost two-orders-of-magnitude rise in conductivity relative to the Bi 2 S 3 sample in its pure form. Due to its superior conductivity, the Bi 2 S 3 +1 wt% MoCl5 sample achieved an excellent power factor of 550 μW m −1 K −1 which is the maximum ever reported in the Bi 2 S 3 system. Simultaneously, the ZT value of this sample approached 0.70 at 773 K, which is a six-fold improvement compared to the pristine sample. Density functional theory was applied to understand the electronic structure changes of the Mo-doped sample, which revealed that trace amounts of MoCl 5 doping could significantly boost the density of states in the vicinity of the conduction band and shift the Fermi level to the valence band, leading to a reduction in the bandgap and an increase in free electrons. This work offers new insights into the role of Mo elements in thermoelectric materials and provides a good strategy for augmenting the thermoelectric figures of merit of other n-type thermoelectric materials with inadequate electrical conductivity in the future.
研究领域:
材料科学
·
热电材料
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DOI
高影响因子
Journal of Materiomics
·
2024
·
IF 8.4
Xusheng Liu,Keli Wang,Peng Li,Qiqi Tang,Zhenlong Huang,Yuan Lin,Wu Wang,Binbin Jiang,Jiaqing He
Entropy engineering has emerged as an effective strategy for improving the figure-of-merit zT by decelerating the phonon transport while maintaining good electrical transport properties of thermoelectric materials. Herein, a high average zT of 1.54 and a maximum zT of 2.1 are achieved in the mid-entropy GeTe constructed by Ag, Sb, and Pb alloying. At room temperature, the mid-entropy GeTe tends to be a cubic structure. And the power factor is improved from 7.7 μW·cm −1 ·K −2 to 16.2 μW·cm −1 ·K −2 due to the large increase in effective mass and the optimized carrier concentration. The increasing disorder created by heavy and off-centering Ag, Sb, and Pb atoms induces strong mass/strain fluctuations and phonon scattering to decelerate the phonon transport in GeTe. A low lattice thermal conductivity is obtained in the medium-entropy GeTe-based material. Moreover, a GeTe-based thermoelectric cooler is fabricated with the cooling temperature difference of 66.6 K with the hot end fixed at 363 K. This work reveals the effectiveness of entropy engineering in improving the average zT in GeTe and shows potential application of GeTe as a thermoelectric cooler.
研究领域:
材料科学
·
热电材料研究
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2020
·
IF 8.758
Jisheng Liang,Hengquan Yang,Chengyan Liu,Lei Miao,Junliang Chen,Sijing Zhu,Zhengchuan Xie,Wenjing Xu,Xiaoyang Wang,Jun Wang,Biaolin Peng,Kunihito Koumoto
Mg3Sb2-based compounds by virtue of nontoxicity and low-cost have become a promising class of candidates for midtemperature thermoelectric power generation. Here, we successfully fabricated n-type Mg3Sb2-based materials using an inexpensive and efficient approach of one-step ball milling and spark plasma sintering, and demonstrate that a complementary and favorable effect of multiple elements coalloying/-doping leads to an excellent thermoelectric performance. The intrinsic p-type conducting behavior for Mg3Sb2 could be changed to n-type through Bi and Se coalloying on Sb sublattices with excess Mg, resulting from the suppression of Mg vacancies and the formation of Mg interstitial. Furthermore, Mn doping on Mg sublattices could soften the chemical bonds, leading to the increase of carrier mobility and concentration simultaneously. Additionally, multielement coalloying/-doping could significantly increase the lattice disorder, which undoubtedly strengthens the phonon scattering and readily results in a suppressed lattice thermal conductivity. As a result, a highest ZT value of 1.6 at 723 K and an average ZT value up to 1.1 were obtained in the temperature range of 323–723 K in the Mg3.18Mn0.02Sb1.5Bi0.49Se0.01 sample, which is one of the highest values among the Te free Mg3Sb2. This work could give guidance for improving the thermoelectric performance of Zintl phase materials or even others using the multielement codoping/-alloying strategy.
研究领域:
材料科学
·
能源工程
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DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Yaqiang Wang,Jiaman Wei,Yi Wu,Wei Yu,Xin Guo
Crystalline structures, as the basics of materials, are tightly associated with transport properties. Designing a structure through doping, alloying, and phase engineering to optimize thermoelectric transport properties has always been a crucial strategy in thermoelectrics. In this work, hybrid architectures containing an inherently long-range, nearly cubic framework as well as localized short-range noncubic lattice distortions, are designed in the pristine CuInTe2 chalcopyrites by a unique high-pressure technology. As a result, the long-range order structures motivate degeneracy in electronic bands, markedly improving the electrical transport properties. Meanwhile, suppressed lattice thermal conductivity due to strong phonon scattering is achieved by the short-range disorder structures composed of dense dislocations introduced by pressure. The above incorporation effects lead to a distinguished thermoelectric performance of zT = 1.13 at 773 K for pristine CuInTe2 prepared under 3 GPa. This study demonstrates the bright potential of high pressure as a significant approach in designing bespoke crystalline structures for tuning thermoelectric transport properties.
研究领域:
材料科学
·
热电材料
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DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2026
·
IF 7.8
Wenqi Zheng,Dan Feng,Mingrui Zhang,Mengqi Li,Weishuai Wang,Fudong Zhang,Zupei Yang,Di Wu
Entropy engineering is becoming a crucial strategy for enhancing the performance of thermoelectric materials, as increasing configurational entropy can influence the phase structure and localized microstructure profoundly. SnTe, as a lead-free alternative to PbTe, has drawn intensive attention for decades. Despite the outstanding maximal figures of merit have been reported in SnTe-based alloys, the average figure of merit across the working temperature range still stays at quite a low level as compared to PbTe-based materials. In this work, based on the SnTe-based Sn1–xGexTe solid solution, we increased its configurational entropy to the medium-entropy range (1.0R < ΔS < 1.5 R) by Sb2Te3 alloying and Pb doping. Increasing configurational entropy substantially enlarged the effective mass of charge carriers while significantly reducing the lattice thermal conductivity, thereby realizing effective decoupling between electrical and thermal transports. As a result, we achieved a maximal ZT value of 1.31 at 723 K with an impressively high average ZT value of 0.89 across 323–773 K in the sample (Sn0.5Ge0.425Pb0.075Te)10Sb2Te3. This work offers a generalizable methodology for designing high-performance thermoelectric materials.
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DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Abubakar Yakubu Haruna,Yubo Luo,Zheng Ma,Wang Li,Haiqiang Liu,Xin Li,Qinghui Jiang,Junyou Yang
The thermoelectric performance of n-type Bi2Te3 needs further enhancement to match that of its p-type Bi2Te3 counterpart and should be considered for competitive applications. Combining Cu/Cl and multiscale additives (AgBiSe2) presents a suitable route for such enhancement. This is evidence of the enhanced thermoelectric performance of Bi1.995Cu0.005Te2.69Se0.33Cl0.03. Moreover, by incorporating 0.65 wt % AgBiSe2 (ABS) into Bi1.995Cu0.005Te2.69Se0.33Cl0.03, we further reduce its lattice thermal conductivity to ∼0.28 W m–1 K–1 at 353 K owing to the extra phonon scattering of multiscale ABS. Additionally, the Seebeck coefficient enhances (−183.89 μV K–1 at 353 K) owing to the matrix’s reduced carrier concentration caused by ABS. As a result, we achieve a high ZT of ∼1.25 (at 353 K) and a high ZTave of ∼1.12 at 300–433 K for Bi1.995Cu0.005Te2.69Se0.33Cl0.03 + 0.65 wt % ABS. This work provides a promising strategy for enhancing the thermoelectric performance of n-type Bi2Te3 through Cu/Cl doping and ABS incorporation.
研究领域:
材料科学
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能源材料
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热电材料优化
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产品关联
DOI
PubMed
高影响因子
Acta Metallurgica Sinica-English Letters
·
2025
·
IF 3.9
Yuan Baocheng,Wen Yi,Wang Lei,Li Zhihao,Wang Hong-Chao,Chang Cheng,Zhao Li-Dong
Thermoelectric materials possess tremendous potential in energy regeneration owing to their capacity to produce power directly from heat. SnTe, a lead-free compound, is a prospective thermoelectric material. However, because of its elevated thermal conductivity, the thermoelectric performance of undoped SnTe remains at a low level. In this work, we induce ternary compounds CuFeS 2 into the SnTe matrix by ball milling. We observe the decomposition of CuFeS 2 , which decomposes into FeS, Cu 2 S, and other binary compounds. These newly generated binary compounds form micropores and secondary phases in the matrix. Combined with the natural grain boundaries in the polycrystal, they form all-scale hierarchical structures within the material, resulting in reduced lattice thermal conductivity. Overall, the produced SnTe + 2 wt% CuFeS 2 composites show the peak dimensionless figure of merit ( ZT ) up to 0.33 at 673 K, an increase of ~ 100% compared to the undoped SnTe.
研究领域:
材料科学
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能源工程
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产品关联
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2018
·Vol. 47
·期 12
·7514-7519
·
IF 1.566
Zhu Z.,Zhang Y. W.,Song H. Z.,Li X. J.
Cu 1.98− x Na x Se nanopowders were synthesized using a hydrothermal method and hot-pressed into bulk pellets to assess the effects of Na doping on the thermoelectric properties of Cu 1.98 Se. The original layered microstructure was maintained at low doping levels, although nanopores, together with point defects, appeared to decrease the thermal conductivity. The thermoelectric properties of the material were improved by Na doping, resulting in a maximum ZT value of 1.32 for Cu 1.94 Na 0.04 Se at 973 K. The experimental data indicate that an optimal level of Na doping effectively improves the thermoelectric performance of non-stoichiometric Cu 1.98 Se.
研究领域:
材料科学
·
热电学
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产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2018
·Vol. 6
·期 24
·11435-11445
·
IF 9.931
Chenjin Liu,Yucheng Xiong,Yajie Huang,Xing Tan,Liangliang Li,Dongyan Xu,Yuan-Hua Lin,Ce-Wen Nan
Amorphous FeVSb-based thin films doped with Ti are deposited by magnetron sputtering. The microstructure, thermal stability, and thermoelectric properties of the films are systematically investigated. The as-deposited (FeVSb)1−xTix films possess an amorphous structure that is thermally stable up to 473 K. The non-doped FeVSb film is an n-type semiconductor. When Ti is doped into the FeVSb film, the (FeVSb)1−xTix films with x from 0.02 to 0.10 are p-type semiconductors. The thermal conductivity values of the FeVSb and (FeVSb)0.94Ti0.06 films measured by the suspended thermal bridge method are 1.18 and 0.93 W m−1 K−1 at 300 K, respectively, which are much lower than those of half-Heusler crystalline bulk materials due to the amorphous structure of these films. The thermoelectric figure of merit ZT is calculated to be 0.09 and 0.23 at 300 K for the FeVSb and (FeVSb)0.94Ti0.06 films, respectively. A planar thermoelectric generator (TEG) with 4 thermocouples based on amorphous (FeVSb)1−xTix films is fabricated. The maximum output power and open-circuit voltage of the TEG are 248 nW and 15.4 mV at a temperature difference of 59.4 K. Our results demonstrate that the amorphous (FeVSb)1−xTix film with ultra-low thermal conductivity and high ZT at room temperature is a high-performance TE material for TEGs.
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DOI
高影响因子
CRYSTAL GROWTH & DESIGN
·
2020
·
IF 4.089
Rui Wang,Fei Jia,Xuan Li,Ling Chen,Li-Ming Wu
The binary Bi/Se system with the general formula [Bi2]m[Bi2Se3]n exhibits intriguing properties, such as topological insulator and thermoelectric properties, and attracts intense attention. Herein, we found that the thermoelectric properties of BiSe at elevated temperatures have been deteriorated, because of the strong bipolar diffusion effect caused by its small band gap. Subsequently, with the aid of the crystal structure engineering strategy, we purposely involve less metallic [Bi2] layers in the crystal structure, and successfully synthesize a new n-type Bi8Se9 and investigate, for the first time, its thermoelectric properties. Bi8Se9 exhibits a significantly widened band gap from 0.085 eV in BiSe to 0.146 eV that effectively reduces the bipolar thermal conductivity from the 0.37 W m–1 K–1 in BiSe to 0.14 W m–1 K–1. As a result, Bi8Se9 realizes a balance between the electrical resistance, the Seebeck coefficient, and a lower thermal conductivity, and achieves a ZT value of 0.40 at 673 K, which is twice that of BiSe at 673 K.
研究领域:
材料科学
·
物理学
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DOI
高影响因子
CERAMICS INTERNATIONAL
·
2021
·
IF 4.527
Xin Liu,Mengmeng Fan,Xuguang Zhu,Zengguo Tian,Xin-Jian Li,Hongzhang Song
Bi 2 Sr 2 Co 2 O y with excellent thermoelectric properties has received extensive attention from scientific researchers. In this study, Bi 2 Sr 2 Co 2 O y ceramic samples were prepared using the solid-phase sintering method. By Ag + substitution for Bi 3+ , the hole concentration and electrical conductivity were optimised. On this basis, nano-SiC particles were introduced to increase grain boundaries, improve phonon scattering, reduce the mean free path of phonons, and reduce the lattice thermal conductivity . A sample with a nominal composition of Bi 1.8 Ag 0.2 Sr 2 Co 2 O y + 0.025 wt% SiC had a maximum ZT value of 0.35 at 923 K, which was approximately 67 % higher than the ZT value of pure Bi 2 Sr 2 Co 2 O y . These results confirmed that under the combined action of Ag substitution and SiC doping, the thermoelectric performance of Bi 2 Sr 2 Co 2 O y was significantly improved.
研究领域:
材料科学
·
热电材料研究
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产品关联
DOI
高影响因子
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