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Materials · 2019 ·Vol. 12 ·期 12 ·1883 · IF 2.972

ZnO-Controlled Growth of Monolayer WS2 through Chemical Vapor Deposition

Zhuhua Xu,Yanfei Lv,Feng Huang,Cong Zhao,Shichao Zhao,Guodan Wei

Monolayer tungsten disulfide (2D WS2) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS2is still challenging. In this paper, we report a novel method to grow WS2through chemical vapor deposition (CVD) with ZnO crystalline whisker as a growth promoter, where partially evaporated WS2reacts with ZnO to form ZnWO4by-product. As a result, a depletion region of W atoms and S-rich region is formed which is favorable for subsequent monolayer growth of WS2, selectively positioned on the silicon oxide substrate after the CVD growth.Keywords:monolayer WS2;ZnO;CVD;controlled growth

CAS / MDL: 12138-09-9
研究领域: 材料科学 · 纳米技术
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Small · 2024 ·Vol. 21 ·期 5 ·2409189 · IF 13

Emergent Skyrmions in Cr0.85Te nanoflakes at Room Temperature

Yan Ni,Yongxiang Guo,Yuan-Yuan Jiang,Ting Huang,Qiuxuan Mu,Feiyan Hou,Tiaoyang Li,Shaohao Wang,Zhen Zhang,Dingfu Shao,Xiangdong Ding,Tai Min,Tao Li

Chiral noncollinear magnetic nanostructures, such as skyrmions, are intriguing spin configurations with significant potential for magnetic memory technologies. However, the limited availability of 2D magnetic materials that host skyrmions with Curie temperatures above room temperature presents a major challenge for practical implementation. Chromium tellurides exhibit diverse spin configurations and remarkable stability under ambient conditions, making them a promising platform for fundamental spin physics research and the development of innovative 2D spintronic devices. Here, domain structures of Cr 0.85 Te nanoflakes synthesized via chemical vapor deposition are investigated, using magnetic force microscopy at room temperature. The results reveal that the domain width of the as-grown nanoflakes scales with the square root of their thicknesses. Notably, the emergence and annihilation of skyrmions are observed, which can be reversibly controlled by external magnetic fields and thermal excitation in ambient air. Micromagnetic simulations suggest that the emergence of skyrmions in Cr 0.85 Te nanoflakes arises from inversion symmetry breaking due to compositional gradients across the sample thickness, rather than the interfacial Dzyaloshinskii–Moriya interaction. These findings provide new insights into the mechanisms underlying skyrmion formation in 2D ferromagnets and open exciting possibilities for manipulating domain structures at room temperature, offering practical pathways for developing next-generation spintronic devices.

研究领域: 物理学 · 材料科学 · 纳米技术
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Electronics · 2022 ·Vol. 11 ·期 16 ·2574 · IF 2.69

Preparation and Charge Transfer at Sb2Se3/1L-MoS2 Heterojunction

Yiren Wang,Weitao Su,Fei Chen,Hong-Wei Lu

Owing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical to the design and applications of ultrathin optoelectronic devices. However, the preparation of HJs using Sb2Se3 and other transition metal dichalcogenide (TMDC) thin layers is still challenging. Herein, a chemical vapor deposition (CVD) method was used to prepare monolayer MoS2(1L-MoS2) and Sb2Se3 thin layers. A dry transfer method was subsequently used to build their HJs. Individual PL spectra and PL mapping results obtained at the HJs indicate a charge injection from 1L-MoS2 into Sb2Se3 flake, which was further confirmed by contact potential difference (CPD) results obtained by using Kelvin probe force microscopy (KPFM). Further measurements indicate a type-Ⅰ band alignment with a band offset finally determined to be 157 meV. The obtained results of Sb2Se3/1L-MoS2 HJs will benefit the rational design of novel ultrathin optoelectronic devices based on novel 2D absorber layers working in visible light.

研究领域: 材料科学 · 光电子学
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INORGANIC CHEMISTRY · 2024 · IF 4.3

Mist Chemical Vapor Deposition of Bi13S18I2 for Photoelectrochemical-type Photodetection

Guoxiao Zhao,Bingchu Mei,Yao Chen,Zaichun Sun

Bismuth-based ternary compounds have attracted much attention owing to their various merits, such as low toxicity and tunable electrical and optical properties. However, these compounds are yet to be understood due to the lack of suitable targets limited by immature synthesis techniques. In this work, we aimed at the synthesis, properties investigation, and photodetection application of Bi13S18I2. Mist chemical vapor deposition was adopted for the deposition of the Bi13S18I2 thin film for the first time. The deposition mechanism was discussed from the perspective of crystal phase and surface morphology. Based on the Bi13S18I2 thin film synthesized at optimal temperature, we constructed a photoelectrochemical-type photodetector. The photodetection performance was evaluated from the points of electrolyte composition, working temperature, and bias voltage. This study would pave the way for the controllable synthesis and applications of bismuth-based ternary compounds.

研究领域: 材料科学 · 半导体物理
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Coatings · 2022 ·Vol. 12 ·期 1 ·68 · IF 3.236

Chemical Vapor Deposition and Thermal Oxidation of Cuprous Phosphide Nanofilm

Xue Peng,Yanfei Lv,Shichao Zhao

Inorganic semiconductors usually show n-type characterization; the development of p-type inorganic semiconductor material will provide more opportunities for novel devices. In this paper, we investigated the chemical vapor deposition (CVD) of p-type cuprous phosphide (Cu3P) nanofilm and studied its thermal oxidation behavior. Cu3P film was characterized by optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), laser Raman spectroscopy (Raman), and fluorescence spectroscopy (PL). We found that the thickness of film ranged from 4 to 10 nm, and the film is unstable at temperatures higher than room temperature in air. We provide a way to prepare inorganic phosphide nanofilms. In addition, the possible thermal oxidation should be taken into consideration for practical application.Keywords:cuprous phosphide;nanofilm;chemical vapor deposition;thermal oxidation

研究领域: 材料科学 · 半导体物理
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CERAMICS INTERNATIONAL · 2025 · IF 5.6

Microstructure and tribological properties of <111>-oriented 3C-SiC by chemical vapor deposition

Wenxuan Yang,Wei Huang,Cuicui Li,Chongjie Wang,Chitengfei Zhang,Rong Tu,Song Zhang

Highly <111>-oriented 3C-SiC coatings were fabricated by chemical vapor deposition method at different temperatures. As deposition temperature increased from 1473 K to 1773 K, the surface structure of <111>-oriented 3C-SiC transitioned from hexagonal structure with sixfold symmetry to hill-like structure, and finally to conical porous surface composed of stacked short rods. Owing to alteration of surface structure, the hardness of 3C-SiC coatings presented a trend of initially increasing and subsequently decreasing. The 3C-SiC coating deposited at 1673 K possessed the highest hardness, with a value of 42.08 GPa. The average friction coefficient for 3C-SiC/Si 3 N 4 pair ranged from 0.258 to 0.569. The wear rate and hardness exhibited opposite trends. Compared with 3C-SiC coatings prepared at the other three temperatures, the 3C-SiC coating deposited at 1573 K exhibited the lowest wear rate under loads of 5 N, 10 N, and 15 N. Furthermore, the lowest wear rate, recorded at 15 N, was 4.1 × 10 −6 mm 3 /Nm, attributed to high hardness and uniform grain size. The wear mechanism of <111>-oriented 3C-SiC coatings during dry sliding primarily involved fracture, leading to fatigue and third-body wear.

CAS / MDL: 10026-04-7
研究领域: 材料科学 · 表面工程
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RARE METALS · 2019 ·Vol. 39 ·期 7 ·841-849 · IF 1.785

Enhanced visible-light photoelectrochemical performance via chemical vapor deposition of Fe2O3 on a WO3 film to form a heterojunction

Zhang Yi-Fei,Zhu Yu-Kun,Lv Chun-Xiao,Lai Shou-Juan,Xu Wen-Jia,Sun Jin,Sun Yuan-Yuan,Yang Dong-Jiang

A heterojunction photoanode of Fe 2 O 3 loaded on a WO 3 film on a fluorine-doped tin oxide substrate (FTO-WO 3 /Fe 2 O 3 ) was prepared via a simple hydrothermal and chemical vapor deposition (CVD) growth method. The photoanode showed higher photoelectrochemical (PEC) water-splitting activity than that of the pristine FTO-WO 3 under simulated sunlight because of the synergistic effect of Fe 2 O 3 and WO 3 . The as-synthesized material was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). The photocurrent density was estimated by linear sweep voltammetry and further confirmed using intensity-modulated photocurrent spectra. Experiments demonstrated that the coated Fe 2 O 3 enhanced the separation and migration efficiencies of the photoinduced electrons and holes, improving the PEC water-splitting properties. The FTO-WO 3 /Fe 2 O 3 photoanode showed a 1.25 times enhancement in photocurrent density compared with FTO-WO 3 . This result suggests that facile chemical vapor deposition growth is an effective way to fabricate heterojunctions and improve the properties of WO 3 photoanodes for PEC water-splitting applications.

CAS / MDL: 14024-18-1 6153-56-6
研究领域: 材料科学 · 能源科学
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CHEMICAL PHYSICS LETTERS · 2021 · IF 2.328

Synthesis of nanosized ultrathin MoS2 on montmorillonite nanosheets by CVD method

Jie Zhang,Tianyu Liu,Liangjie Fu,Gonglan Ye

As an emerging material, exfoliated molybdenum disulfide (MoS 2 ) has an excellent performance in catalysis, electronics and adsorption. However, the application performance of exfoliated MoS 2 is limited by the strong adhesion between MoS 2 layers and the low colloidal stability of MoS 2 in water. In this study, for the first time, nanosized ultrathin MoS 2 was successfully synthesized on exfoliated montmorillonite (MMT) by CVD method. Two reaction mechanisms were found when using flow gas with or without H 2 . The introduction of H 2 promotes the growth of MoS 2 crystals and reduces nucleation density. The MoS 2 /MMT showed excellent performance in dye degradation.

研究领域: 材料科学 · 催化化学
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CRYSTENGCOMM · 2019 ·Vol. 21 ·期 32 ·4740-4746 · IF 3.382

Selective growth of zinc blende, wurtzite and hybrid SiC nanowires via a simple chemical vapor deposition route

Jingbo He,Bo Sun,Yong Sun,Chengxin Wang

Although more than 250 polytypes of silicon carbide (SiC) crystals have been discovered, only very limited types of nanowires can be synthesized in a controllable manner. Both experimental and theoretical investigation reveal that 3C-SiC is the most stable form, which is the primary product of nanowires synthesized via various methods in thousands of reports. Although hexagonal phases, particularly the wurtzite structure with a bandgap of 3.33 eV is promising in optoelectronic applications, the fabrication of nanowires with theses phases is still rare. Herein, in this study, by precisely regulating the atmospheric conditions, we revealed that the CH4 supply resulted in the phase-selective growth between 3C- and 2H-SiC nanowires. As the CH4 flow rate increased, it was possible to fabricate 3C-SiC, hybrid 3C-/2H-SiC and 2H-SiC nanowires in a controllable manner. The possible mechanism is demonstrated accordingly. We believe this progress benefits the structural design and optoelectronic application of SiC nanowires.

研究领域: 材料科学 · 纳米技术 · 半导体物理 · 光电材料 · 晶体生长
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Crystals · 2020 ·Vol. 10 ·期 7 ·575 · IF 2.404

Chemical Vapor Deposition of IrTe2 Thin Films

Rui Zhou,Zhaoyang Zhao,Juanxia Wu,Liming Xie

Two-dimensional (2D) IrTe2has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe2films using different Ir precursors on different substrates. The Ir(acac)3precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe2films. Temperature-dependent Raman spectroscopic characterization has shown the q1/8phase to HT phase at ~250 K in the as-grown IrTe2films on h-BN. Electrical measurement has shown the HT phase to q1/5phase at around 220 K.Keywords:chemical vapor deposition (CVD);two-dimensional material;IrTe2;iridium acetylacetonate;phase transition

CAS / MDL: 15635-87-7
研究领域: 材料科学 · 凝聚态物理
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APPLIED SURFACE SCIENCE · 2018 · IF 4.439

Fabrication of superhydrophobic cotton fabrics by grafting of POSS-based polymers on fibers

Chao-Hua Xue,Qian-Qian Fan,Xiao-Jing Guo,Qiu-Feng An,Shun-Tian Jia

Superhydrophobic fabrics were successfully prepared by modification of fibers with polymers containing polyhedral oligomeric silsesquioxane (POSS). The modification was conducted by chemical vapor deposition with mercapto silanes followed by click coupling with pentaerythritol tetrakis(3-mercaptopropionate) and octavinyl-POSS to form POSS-based polymers on the cotton fibers. The POSS-based polymers onto the fabric surfaces both increased the surface roughness and lowered the surface energy of the fabrics. The as-prepared superhydrophobic fabrics have excellent superhydrophobicity stability toward acid, base, salt, acetone, and N,N-dimethylformamide. In addition, the fabrics maintained superhydrophobicity under long time exposure to UV irradiation, and have better antifouling properties.

CAS / MDL: 24650-42-8 107-06-2
研究领域: 材料科学 · 纺织工程
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Materials · 2019 ·Vol. 12 ·期 3 ·390 · IF 2.972

Structural Controlling of Highly-Oriented Polycrystal 3C-SiC Bulks via Halide CVD

Zhiying Hu,Dingheng Zheng,Rong Tu,Meijun Yang,Qizhong Li,Mingxu Han,Song Zhang,Lianmeng Zhang,Takashi Goto

Highly-oriented polycrystal 3C-SiC bulks were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors. The effects of deposition temperature (Tdep) and total pressure (Ptot) on the orientation and surficial morphology were investigated. The results showed that the growth orientation of 3C-SiC columnar grains was strongly influenced byTdep. With increasingTdep, the columnar grains transformed from <111>- to <110>-oriented. The arrangement of <111>-oriented columnar grains was controlled byPtot. Lotus-, turtle-, thorn-, and strawberry-like surface morphologies were naturally contributed by different arrangements of <111>-oriented grains, and the deposition mechanism was discussed. The wetting behaviors of CVD-SiC samples by molten aluminum were also examined at 1173 K in a high vacuum atmosphere.Keywords:3C-SiC;chemical vapor deposition (CVD);orientation;surficial morphology;wettability

CAS / MDL: 10026-04-7
研究领域: 材料科学 · 化学工程
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