Journal of Materiomics
·
2021
·
IF 6.425
Yang Yin,Jing-Ru Yu,Yu-Cheng Tang,Ai-Zhen Song,Huan Liu,Dong Yang,Jing-Feng Li,Lei Zhao,Bo-Ping Zhang
NaNbO 3 -based ceramics usually show ferroelectric-like P-E loops at room temperature due to the irreversible transformation of the antiferroelectric orthorhombic phase to ferroelectric orthorhombic phase, which is not conducive to energy storage applications. Our previous work found that incorporating CaHfO 3 into NaNbO 3 can stabilize its antiferroelectric phase by reducing the tolerance factor ( t ), as indicated by the appearance of characteristic double P-E loops. Furthermore, a small amount of MnO 2 addition effectively regulate the phase structure and tolerance factor of 0.94NaNbO 3 -0.06CaHfO 3 (0.94NN-0.06CH), which can further improve the stability of antiferroelectricity. The XRD and XPS results reveal that the Mn ions preferentially replace A-sites and then B-sites as increasing MnO 2 . The antiferroelectric orthorhombic phase first increases and then decreases, while the t shows the reversed trend, thus an enhanced antiferroelectricity and the energy storage density W rec of 1.69 J/cm 3 at 240 kV/cm are obtained for 0.94NN-0.06CH-0.5%MnO 2 (in mass fraction). With the increase of Mn content to 1.0 % from 0.5 %, the efficiency increases to 81 % from 45 %, although the energy storage density decreases to 1.31 J/cm 3 due to both increased tolerance factor and non-polar phase.
研究领域:
材料科学
·
陶瓷
·
储能
·
电陶瓷
✓ 已验证
DOI
高影响因子
APPLIED PHYSICS LETTERS
·
2019
·Vol. 115
·期 5
·
IF 3.521
Wang Jinxin,Jiang Guicheng,Huang Weicheng,Liu Danqing,Yang Bin,Cao Wenwu
Materials with an electrocaloric effect (ECE) have been extensively studied for their cooling applications. Most ECE films are oriented and are difficult to integrate into industrial production processes. Here, an ECE ( ΔS = 4.48 J K −1 kg −1 and ΔT = 6.4 °C at ΔE = 390 kV cm −1 ) is obtained in an unoriented PbZr 0.95 Ti 0.05 O 3 (PZT) film fabricated on an FTO substrate using an improved sol-gel method. To improve the ECE, Si-doped PZT films with 1–4 mol. % of Si are deposited. X-ray diffraction and X-ray photoelectron spectroscopy results confirm that Si was doped into the PZT lattice. The orthorhombic and tetragonal antiferroelectric phases coexist in the PZT/0.01 Si film. A large ECE ( ΔS = 5.89 J K −1 kg −1 and ΔT = 8.5 °C at ΔE = 390 kV cm −1 ) is acquired in the PZT/0.01 Si film, which was measured by an indirect method. This work demonstrates that ECE of unoriented PZT antiferroelectric films on FTO substrates can be improved by a certain amount of Si doping.
研究领域:
材料科学
·
物理学
✓ 已验证
DOI
高影响因子
Nature Communications
·
2022
·Vol. 13
·期 1
·1-7
·
IF 17.694
Xu Haojie,Guo Wuqian,Ma Yu,Liu Yi,Hu Xinxin,Hua Lina,Han Shiguo,Liu Xitao,Luo Junhua,Sun Zhihua
Metal-free antiferroelectric materials are holding a promise for energy storage application, owing to their unique merits of wearability, environmental friendliness, and structure tunability. Despite receiving great interests, metal-free antiferroelectrics are quite limited and it is a challenge to acquire new soft antiferroelectric candidates. Here, we have successfully exploited binary CMBr x I 1- x and CMBr x Cl 1- x solid solution as single crystals (0 ≤ x ≤ 1, where CM is cyclohexylmethylammonium). A molecule-level modification can effectively enhance Curie temperature. Emphatically, the binary CM-chloride salt shows the highest antiferroelectric-to-paraelectric Curie temperature of ~453 K among the known molecular antiferroelectrics. Its characteristic double electrical hysteresis loops provide a large electric polarization up to ~11.4 μC/cm 2 , which endows notable energy storage behaviors. To our best knowledge, this work provides an effective solid-solution methodology to the targeted design of new metal-free antiferroelectric candidates toward biocompatible energy storage devices.
研究领域:
材料科学
·
能量存储
·
电化学
✓ 已验证
DOI
高影响因子
ACTA MATERIALIA
·
2024
·
IF 8.3
Hongyan Wan,Zenghui Liu,Wenhao Yang,Nan Zhang,Meng Shen,Zheyi An,Pan Gao,Guanjie Zhang,Jingrui Li,Gang Niu,Shenglin Jiang,Wei Ren,Zuo-Guang Ye
Antiferroelectric materials exhibit fantastic application potential in multifunctional devices due to their special structure and polarization/strain-electric field responses. However, it has long been challenging to realize multifunctionality in PbHfO 3 , one of the prototypical antiferroelectrics, due to its poor sinterability and structural complexity. To address these issues, we report an effective strategy to obtain fine and dense PbHfO 3 ceramics by the solid-state reaction method involving a liquid phase sintering mechanism. The crystal structure, microstructure, phase transitions, energy storage, and strain performance are systematically investigated. A high recoverable energy density W reco (7.29 J/cm 3 ) and a large strain (0.51%) are achieved with a temperature-stable (25 ∼ 175 °C) feature. By combination of synchrotron and laboratorial X-ray diffraction, Raman spectroscopy, dielectric and impedance spectroscopy, and density-functional-theory calculations, the high and temperature-stable energy-storage and strain properties are determined to arise from the stable antiferroelectric nature of PbHfO 3 with a large polarization in a broad temperature range and its transformation to a ferroelectric phase with R 3 c symmetry under electric field. Furthermore, the ceramics present a negative temperature coefficient of resistance in a higher temperature range of 400 ∼ 600 °C. These performances grant PbHfO 3 antiferroelectric ceramics a huge potential for applications in high-density energy storage capacitors, large-displacement actuators, and temperature sensors and compensators over a broad temperature range.
研究领域:
材料科学
·
物理学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2019
·Vol. 30
·期 13
·11945-11951
·
IF 2.195
Zhang Ying,Li Yong,Du Jinghua,Sun Ningning,Hao Xihong,Jiang Haitao,Zhai Jiwei
Antiferroelectric (AFE) Pb 0.94 La 0.04 Zr 0.97 Ti 0.03 O 3 (PLZT) thick film was successfully fabricated on nickel foils by using sol–gel method. The film exhibits dense microstructure with low surface roughness and pure perovskite phase. It displays high dielectric constant of 433 at 100 kHz and room temperature, which is 28% larger than that on traditional silicon substrate. Calculated by polarization-field (P–E) hysteresis loop, the recoverable energy-storage density (W rec ) of 18.4 J/cm 3 and the efficiency (Ƞ) value of 54% at 1400 kV/cm are obtained in the thick film. Measured by resistance–inductance–capacitance (RLC) circuit, the maximum pulsed discharge energy-storage density (W dis ) of 12.4 J/cm 3 is found at the same electric field of 1400 kV/cm. Moreover, 90% of the energy is released in a short time of about 84 ns, displaying super-fast discharging characteristic. The AFE film with high discharge energy-storage density and fast discharge time provides strong potential for the application in modern electronics and electrical power systems.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2024
·
IF 5.1
Bingsen Wang,Junjun Wang,Yuxiao Du,Jian Dai,Zhenhao Fan,Wenfeng Yue,Fu Huang,Atilla Evcin,Yasemin Tabak,Limei Zheng,Dawei Wang
NaNbO 3 (NN)-based dielectric ceramics for energy storage have garnered significant interest due to their high saturation polarization, low residual polarization, and superior breakdown strength ( E b ). However, the low recoverable energy storage density ( W rec ) and efficiency ( η ) significantly limited their practical application. Herein, BiFeO 3 (BF) was incorporated into NN to optimize the energy storage performance. The NN-BF ceramics exhibited pronounced antiferroelectric (AFE) relaxor phase, alongside grain size reduction and E b enhancement, which contributed to a significant increase of W rec and η . Specially, the optimum W rec of 4.43 J/cm³ and η of 71.51 % were achieved at the composition of 0.9NN-0.1BF. Besides, stable energy storage performance was maintained over a wide temperature range (20–120 °C). These results highlight the potential of NN-BF relaxor AFE ceramics as promising candidates for high-performance energy storage applications.
研究领域:
材料科学
·
能源存储
✓ 已验证
DOI
高影响因子
NATURE
·
2025
·Vol. 637
·期 8048
·1104-1110
·
IF 48.5
Yang Bingbing,Liu Yiqian,Jiang Ru-Jian,Lan Shun,Liu Su-Zhen,Zhou Zhifang,Dou Lvye,Zhang Min,Huang Houbing,Chen Long-Qing,Zhu Yin-Lian,Zhang Shujun,Ma Xiu-Liang,Nan Ce-Wen,Lin Yuan-Hua
Dielectric-based energy storage capacitors characterized with fast charging and discharging speed and reliability 1 , 2 , 3 , 4 play a vital role in cutting-edge electrical and electronic equipment. In pursuit of capacitor miniaturization and integration, dielectrics must offer high energy density and efficiency 5 . Antiferroelectrics with antiparallel dipole configurations have been of significant interest for high-performance energy storage due to their negligible remanent polarization and high maximum polarization in the field-induced ferroelectric state 6 , 7 , 8 . However, the low antiferroelectric–ferroelectric phase-transition field and accompanying large hysteresis loss deteriorate energy density and reliability. Here, guided by phase-field simulations, we propose a new strategy to frustrate antipolar ordering in antiferroelectrics by incorporating non-polar or polar components. Our experiments demonstrate that this approach effectively tunes the antiferroelectric–ferroelectric phase-transition fields and simultaneously reduces hysteresis loss. In PbZrO 3 -based films, we hence realized a record high energy density among all antiferroelectrics of 189 J cm −3 along with a high efficiency of 81% at an electric field of 5.51 MV cm −1 , which rivals the most state-of-the-art energy storage dielectrics 9 , 10 , 11 , 12 . Atomic-scale characterization by scanning transmission electron microscopy directly revealed that the dispersed non-polar regions frustrate the long-range antipolar ordering, which contributes to the improved performance. This strategy presents new opportunities to manipulate polarization profiles and enhance energy storage performances in antiferroelectrics.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2020
·
IF 4.65
Lili Li,Bing Zhou,Jianfei Ye,Wei Wu,Fei Wen,Yunchuan Xie,Patrick Bass,Zhuo Xu,Luwen Wang,Gaofeng Wang,Zhicheng Zhang
Polymer-based 0–3 composites filled with ferroelectric ceramic particles have exhibited prominent dielectric responses and energy-storage performance, and are expected to be promising materials for high-performance, energy-storage capacitors in advanced electric systems. Unfortunately, low discharging efficiency hampers their practical application due to the high remnant polarization and interface related dielectric loss. In the present work, an anti-ferroelectric ceramic (Pb 0.97 La 0.02 )[Zr 0.63 (Sn 0.3 Ti 0.07 )O 3 ] (PLZST) was prepared as the filler due to their intrinsic ultra-low dielectric loss and remnant polarization. Meanwhile, 3-aminopropyltriethoxysilane (KH550) was used to modify the surface of PLZST to enhance the interfacial compatibility between the PLZST filler and the polymer matrix . Enhanced dielectric permittivity, lowered loss, increased breakdown strength , and energy density were obtained at a relatively low loading content of the modified fillers (m-PLZST). Specifically, a considerably high energy density of 12.8 J/cm 3 was achieved in a thin film with 8.0 wt% m -PLZST fillers. In comparing the properties of the composites filled with surface modified PLZST ( m -PLZST) and pristine PLZST, the significant performance enhancement is well addressed with the accompanying reduction in loss, lowered remnant polarization, and depressed interfacial polarization. This result correlates to the anti-ferroelectric characteristics of the filler and enhanced compatibility from the surface modification.
研究领域:
材料科学
·
电气工程
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS LETTERS
·
2022
·
IF 3.574
Jinhua Du,Ye Zhao,Yanyu Wang,Jing Ai,Yong Li,Xihong Hao
High energy density is an important factor for antiferroelectric materials applied in power pulse devices. Herein, the Ag (1-3x) Yb x NbO 3 (AYNO-100 x ) ceramics with x = 0, 0.02 and 0.04 were synthesized via a solid-state reaction method in an oxygen atmosphere. The Yb 3+ doping at A-site reduces the oxygen vacancy and increases the silver vacancy after reaching saturation, which improves the antiferroelectric stability, leading to enhanced recoverable energy-storage density of 2.7 J/cm 3 under 255 kV/cm at room temperature. Meanwhile, a relatively high discharge energy density of 1.0 J/cm 3 at 200 kV/cm is also observed in the Ag 0.94 Yb 0.02 NbO 3 ceramic. These results indicate that AgNbO 3 -based ceramics are potential candidates in advanced power electronic devices.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2022
·Vol. 10
·期 23
·12632-12642
·
IF 14.511
Liang Shu,Xin Zhang,Wei Li,Jing Gao,Hongliang Wang,Yu Huang,Yue-Yu-Shan Cheng,Qian Li,Lisha Liu,Jing-Feng Li
AgNbO3-based antiferroelectric films have attracted emerging attention in the field of dielectric energy storage and possess promising applications in photocatalysis and microwave devices. Unfortunately, it remains a challenge to fabricate pure-phase AgNbO3 films on Si substrates, precluding their further integration into electronic devices. Here, we, for the first time, report phase-pure AgNbO3 films on Pt/Ti/SiO2/Si substrates by a chemical solution deposition (CSD) method. A facile CSD route without using the hazardous pyridine additive is demonstrated to obtain a stable AgNbO3 precursor for spin-coating films. By comprehensively controlling the heat treatment conditions, secondary phases are eliminated in the deposited films. The phase transitions of the AgNbO3 films are also investigated, where intriguingly the room temperature phase is determined to be the antiferroelectric M2 phase, rather than the commonly reported M1 phase in bulk AgNbO3. Meanwhile, the relative dielectric permittivity surpasses 300 at room temperature and maintains at ∼400 with low dielectric loss (<0.05; measured at frequencies of 0.1–1 MHz) over a wide temperature range of 150–350 °C, within a 5% variation. This work provides an easy-to-implement process of AgNbO3 films which may attract scientific interests and potential applications.
研究领域:
材料科学
·
电子工程
·
能源存储
✓ 已验证
DOI
高影响因子
Scientific Reports
·
2017
·Vol. 7
·期 1
·1-8
·
IF 4.259
Lu Biao,Li Peilian,Tang Zhenhua,Yao Yingbang,Gao Xingsen,Kleemann Wolfgang,Lu Sheng-Guo
Both relaxor ferroelectric and antiferroelectric materials can individually demonstrate large electrocaloric effects (ECE). However, in order to further enhance the ECE it is crucial to find a material system, which can exhibit simultaneously both relaxor ferroelectric and antiferroelectric properties, or easily convert from one into another in terms of the compositional tailoring. Here we report on a system, in which the structure can readily change from antiferroelectric into relaxor ferroelectric and vice versa. To this end relaxor ferroelectric Pb 0.89 La 0.11 (Zr 0.7 Ti 0.3 ) 0.9725 O 3 and antiferroelectric Pb 0.93 La 0.07 (Zr 0.82 Ti 0.18 ) 0.9825 O 3 ceramics were designed near the antiferroelectric-ferroelectric phase boundary line in the La 2 O 3 -PbZrO 3 -PbTiO 3 phase diagram. Conventional solid state reaction processing was used to prepare the two compositions. The ECE properties were deduced from Maxwell relations and Landau-Ginzburg-Devonshire (LGD) phenomenological theory, respectively, and also directly controlled by a computer and measured by thermometry. Large electrocaloric efficiencies were obtained and comparable with the results calculated via the phenomenological theory. Results show great potential in achieving large cooling power as refrigerants.
研究领域:
材料科学
·
物理学
✓ 已验证
DOI
高影响因子
Energy Storage Materials
·
2021
·
IF 17.789
Jie Jiang,Xiangjun Meng,Ling Li,Shun Guo,Ming Huang,Ji Zhang,Jing Wang,Xihong Hao,Heguo Zhu,Shan-Tao Zhang
Dielectric capacitors have drawn growing attention for their wide application in future high power and/or pulsed power electronic systems. However, the recoverable energy storage density ( W rec ) for dielectric ceramics is relatively low up to now, which largely restricts their actual application. Herein, the domain engineering is employed to construct relaxor antiferroelectric NaNbO 3 -BiFeO 3 bulk ceramics, which integrates the merits of antiferroelectrics and relaxors. It is revealed that the antiferroelectric phase transforms from orthorhombic P to R phase, and antiferroelectric domain evolves from micron-sized blocks to nanoscale clusters. Of particular importance is that the 0.90NaNbO 3 –0.10BiFeO 3 ceramic demonstrates ultrahigh W rec of 18.5 J cm −3 with giant electric breakdown strength of 99.5 kV mm −1 , which is superior than state-of-the-art bulk dielectric ceramics. Moreover, the 0.90NaNbO 3 –0.10BiFeO 3 ceramic exhibits superior frequency, cycling and thermal reliability, as well as the substantial current density (2140.6 A cm −2 ), ultrahigh power density (428.1 MW cm −3 ) and ultrafast discharge rate (14 ns). These results not only suggest that the NaNbO 3 -based relaxor antiferroelectric ceramics are promising candidates for advanced energy storage capacitors, but also provide feasible strategy of domain engineering to develop novel lead-free high-performance dielectric materials.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）