NANOTECHNOLOGY
·
2021
·Vol. 32
·期 19
·195502
·
IF 3.874
Zhenzhen Ma,Jiahui Li,Yating Zhang,Hongliang Zhao,Qingyan Li,Chengqi Ma,Jianquan Yao
With extremely high optical absorption coefficient in infrared regime, lead sulfide (PbS) quantum dots (QDs)-based photodetectors are promising for diverse applications. In recent years, synthesis of materials has made great progress, but the problem of low sensitivity of quantum dots photodetector still unresolved. In this work, the introduction of a tunneling organic layer effectively address this problem. The dark current is decreased by the appropriate thickness of polymethyl methacrylate (PMMA) barrier layer by suppressing the spontaneous migration of ions, and the photogenerated carriers are little effected, thereby the responsivity of the device is improved. As a result, the device exhibits a high responsivity of 3.73 × 105 mA W−1 and a giant specific detectivity of 4.01 × 1013 Jones at a low voltage of −1 V under 1064 nm illumination. In the self-powered mode, the responsivity reaches a value of 157.6 mA W−1, and the detectivity up to 5.9 × 1011 Jones. The performance of the photodetectors is obviously better than most of the reported QDs photodetectors. The design of this device structure provides a new solution to the problem of low sensitivity and high leakage current of quantum dots based infrared photodetectors.
研究领域:
材料科学
·
光学工程
✓ 已验证
DOI
高影响因子
Frontiers in Materials
·
2021
·
IF 3.515
Zhao Qian,Yu Zhenglei,Liang Yunhong,Ren Lei,Ren Luquan
Near infrared laser- (NIR-) driven intelligent hydrogel actuator systems including printable N-isopropylacrylamide- (NIPAm-) nanosized synthetic hectorite clay-nanofibrillated cellulose (NFC) hydrogels and NIPAm-4-hydroxybutyl acrylate- (4HBA-) NFC hydrogels with a high response rate were prepared via three-dimensional (3D) printing and hydrothermal synthesis, respectively. The addition of NFC was beneficial to the improvement in rheology. The 3D printed intelligent hydrogel actuators with a structure pattern of Model I and Model II exhibited the saddle and inverted saddle deformations, respectively, to prove the validity of 3D printing. In order to improve the response rate and enrich movement patterns, the hydrothermal synthesized intelligent hydrogel actuators were prepared on the base of the 3D printed intelligent hydrogel compositions. The addition of NFC maintained the controllable NIR response. Based on a wedge-shaped design, the hydrothermal synthesized intelligent hydrogel pushed the resin ball with weight of 130 mg forward 8 mm in 39 s. By changing the torque values of a hydrogel in a different direction, the actuator realized controllable continuous rollover movement. Attributed to the longilineal shape, the intelligent hydrogel actuator reached an effective displacement of 20 mm in 10 s via a forward movement. The characteristics and structure design of a hydrogel material significantly realized multiple controllable functional four-dimensional (4D) printed deformations and movements. The combination of advantages of the 3D printed and hydrothermal synthesized intelligent hydrogels provided a new direction of development and abundant material candidates for the practical applications of 4D printing in soft robot, information sensing, and health engineering.
研究领域:
材料科学
·
生物工程
·
软体机器人
✓ 已验证
产品关联
DOI
高影响因子
NANOTECHNOLOGY
·
2016
·Vol. 27
·期 17
·175201
·
IF 3.573
Yan Wang,Zhonggao Xia,Songnan Du,Fang Yuan,Zigang Li,Zhenjun Li,Qing Dai,Haolan Wang,Shiqiang Luo,Shengdong Zhang,Hang Zhou
We present here solution-processed photodetectors based on a methyl ammonium lead iodide perovskite (MAPbI3) and nanocrystalline graphite (NCG) hybrid composite. The highest responsivity of the best MAPbI3/NCG photodetector was 795 mA W−1 at 500 nm visible light, which is almost twice as high as that of the NCG-free MAPbI3 photodetector (408 mA W−1). The enhanced performance of the MAPbI3/NCG photodetector arises from the improved charge extraction at the MAPbI3/NCG interface. The dependence of photodetector performance on the mass percentage of NCG (the ratio of NCG to MAPbI3) in the hybrid materials is also reported here, and is correlated to the fabrication process. Moreover, by comparing the responsivity of the devices with different channel lengths, we show that the performance of hybrid photodetectors can be further tuned by tailoring the channel length.
研究领域:
材料科学
·
光电技术
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2020
·Vol. 8
·期 21
·2001072
·
IF 8.286
Ping Liu,Yuan Liu,Siwei Zhang,Jingzhou Li,Chunyun Wang,Cong Zhao,Pengbo Nie,Yuhan Dong,Xuan Zhang,Shixi Zhao,Guodan Wei
Lead-free single crystal perovskite materials exhibit impressive characteristics, such as high carrier mobility, low trap density, and long diffusion length. Herein, the high-performance blue light photodetectors are reported based on lead-free all-inorganic Cs 3 Sb 2 Br 9 perovskite single crystals. These millimeter-sized Cs 3 Sb 2 Br 9 single crystals have small thermal activation energy of 56.8 meV estimated by temperature-dependent photoluminescence study. There is no obvious structural phase transition of the as-obtained Cs 3 Sb 2 Br 9 single crystals since no Raman peak shift is observed with temperature increasing from 80 to 300 K. The as-constructed high quality Cs 3 Sb 2 Br 9 single crystals photodetectors have an excellent performance of a responsivity of 2.29 A W −1 , a sharp detectivity of 3.77 × 10 12 Jones, and an external quantum efficiency (EQE) peak of 1.8 × 10 3 %. Moreover, the photodetectors exhibit a fast response time (<0.2 ms) and the full width at half maximum (FWHM) of the sharp EQE peak is as narrow as 15 nm. This work provides a promising strategy in the design of lead-free, stable, and high-performance perovskites for photodetector devices.
研究领域:
材料科学
·
光学工程
✓ 已验证
DOI
高影响因子
IONICS
·
2024
·Vol. 30
·期 3
·1785-1793
·
IF 2.4
Yü Jingzhao,Zhang Yuqing,Wang Liying,Yang Xijia,Yang Yue,Jiang Ke,Lü Wei,Sun Xiaojuan
AlGaN is an ideal material for fabricating ultraviolet (UV) photodetectors targeting the solar-blind wavelength range. However, the performance of UV detectors based on AlGaN is still limited by its material quality and effective p-type doping. Herein, we propose an external modulation method by combining AlGaN with two-dimensional MXene (Ti 3 C 2 T x ) to construct Ti 3 C 2 T x /AlGaN heterostructures. It has been shown that Ti 3 C 2 T x undergoes a transition from a metallic material to a semiconductor depending on oxidation, and the performance of Ti 3 C 2 T x /AlGaN detectors could be adjusted accordingly. The effect of oxidation process of Ti 3 C 2 Tx on performance of Ti 3 C 2 T x /AlGaN photodetectors has been investigated systematically. The optimized devices exhibited a rise time of 72 ms and a decay time 30 ms, achieving a responsivity of 3000 mA/W under 270 nm UV light irradiation.
研究领域:
光电子学
·
半导体器件
·
材料科学
·
纳米技术
✓ 已验证
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2024
·
IF 4.8
Zhe Liu,Jiaqi Li,Shaojie Liu,Yao Yuan,Ainong Chen,Haolin Yu,Shouxiong Wang,Jie Ding,Huajing Fang
The organic–inorganic hybrid heterojunction is introduced for the first time to break through the performance bottleneck of BiVO4-based photodetectors. Through a facile solution process, a p-n heterojunction is established at the BiVO4/PEDOT:PSS interface, and the built-in electric field is designed to separate photogenerated charge carriers. The hybrid heterojunction outputs a significantly increased photocurrent, which is 24 000 times larger than that of the bare BiVO4 thin film. The photodetector shows a satisfactory performance with a responsivity (R) and specific detectivity (D*) of 107.8 mA/W and 4.13 × 1010 Jones at 482 nm illumination. In addition to the fast response speed (100 ms), the device also exhibits an impressive long-term stability with a negligible attenuation in photocurrent after more than 700 cycles. This work provides a novel strategy to suppress carrier recombination of BiVO4, and the coupling of metal oxides and organic semiconductors opens up a new avenue for fabricating high-performance photodetectors.
研究领域:
光电子学
·
材料科学
·
半导体物理
·
纳米技术
✓ 已验证
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2020
·
IF 6.182
Yang Zhang,Tao Deng,Shasha Li,Jingye Sun,Weijie Yin,Yuan Fang,Zewen Liu
An ultraviolet (UV) photodetector was fabricated by depositing single wall carbon nanotubes (SWCNTs) on the surface of a graphene field-effect transistor (GFET) with buried gate electrode structure. A photoresponsivity with a value as high as 204.5 A/W was obtained under a 365-nm LED light illumination with an incident power of 3.9 μW. The photoresponsivity of our photodetector is about four orders higher in magnitude than that of a recently reported UV photodetector, which is based on CNTs/graphene hybrid films with a photoresponsivity of 2.3 × 10 −2 A/W. With increasing the source-drain voltage of the SWCNTs modified GFET, the photoresponsivity can be further enhanced. In addition, the photoresponsivity can also be tuned by applying a small gate voltage. This work provides a simple and feasible method to create highly sensitive UV photodetectors based on all-carbon hybrid films, which are important in many applications such as military surveillance, biomedical instrumentation and environmental monitoring.
研究领域:
材料科学
·
光电子学
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2024
·
IF 4.1
Xiyu Jia,Weishuai Duan,Mingchen Xu,Gaoning Fan,Pengyu Zhou,Yonghui Zhang,Hongxing Zheng,Mengjun Wang,Chao Fan
Near-violet (NV) detectors based on two-dimensional materials have attracted much attention due to their atomic-scale thickness and various band gaps. Among them, tin disulfide (SnS
2
) has demonstrated significant potential for high-performance NV detectors due to its unique photoelectric properties. However, SnS
2
-based NV detector still have drawbacks such as low responsivity and high dark current. In this work a tri-layer van der Waals heterojunction of tin disulfide/h-boron nitride/tin selenide (SnS
2
/h-BN/SnSe) is proposed. The detector based on such tri-layer heterojunction exhibits an excellent self-powered detection performance to 405-nm NV illumination with a responsivity of 1.5 AW
-1
, a low dark current of 2.6 pA, and a high fill factor of 51.8%, superior to detectors based on SnS
2
/SnSe bi-layer heterojunctions and most other two-dimensional materials. This study provides an efficient optimizing strategy for SnS
2
-based self-powered detector, thereby offering an opportunity for implementing innovation in NV detectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2022
·
IF 6.888
Xiao Zhao,Shimao Wang,Fuwei Zhuge,Yanan Song,Toru Aoki,Weiwei Dong,Mengyu Fu,Gang Meng,Zanhong Deng,Ruhua Tao,Xiaodong Fang
Considering the disadvantages of the common methods for CsPbBr3 single crystal growth including the high cost of the melt method and the low shape controllability of the solution method, a facile hot-pressed (HP) approach has been introduced to prepare CsPbBr3 wafers. The effects of HP temperature on the phase purity of HP-CsPbBr3 wafers and the performance of the corresponding photodetectors have been investigated. The HP temperature for preparing phase-pure, shape-regular, and dense CsPbBr3 wafers has been optimized to be 150 °C, and the HP-CsPbBr3 wafer based planar-type photodetectors exhibit an ultrasensitive weak light photoresponse. Under the illumination of a 530 nm LED with a light power density of 1.1 μW cm–2, the responsivity, external quantum efficiency, and detectivity of the devices reach 19.79 A W–1, 4634%, and 2.14 × 1013 Jones, respectively, and a fast response speed with a rise time of 40.5 μs and a fall time of 10.0 μs has been achieved.
研究领域:
材料科学
·
光电子学
·
纳米技术
·
固体物理
✓ 已验证
DOI
高影响因子
Colloids and Interfaces
·
2025
·Vol. 9
·期 4
·49
·
IF 3.2
Qian Lei,Lei Rao,Wencan Deng,Xiuqin Ao,Fan Fang,Wei Chen,Jiaji Cheng,Haodong Tang,Junjie Hao
Lead sulfide colloidal quantum dots (PbS QDs) have demonstrated great potential in short-wave infrared (SWIR) photodetectors due to their tunable bandgap, low cost, and broad spectral response. While significant progress has been made in surface ligand modification and defect state passivation, studies focusing on the interface between QDs and electrodes remain limited, which hinders further improvement in device performance. In this work, we propose an interface engineering strategy based on 3-aminopropyltriethoxysilane (APTES) to enhance the interfacial contact between PbS QD films and ITO interdigitated electrodes, thereby significantly boosting the overall performance of SWIR photodetectors. Experimental results demonstrate that the optimal 0.5 h APTES treatment duration significantly enhances responsivity by achieving balanced interface passivation and charge carrier transport. Moreover, The APTES-modified device exhibits a controllable dark current and faster photo-response under 1310 nm illumination. This interface engineering approach provides an effective pathway for the development of high-performance PbS QD-based SWIR photodetectors, with promising applications in infrared imaging, spectroscopy, and optical communication.
研究领域:
纳米技术
·
光电子学
·
材料科学
·
半导体器件
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Nano Materials
·
2022
·
IF 6.14
Xiaoxiang Wu,Yali Liu,Mengge Li,Wenxuan Guo,Tianjian Ou,Cong Xiao,Jiadong Yao,Ying Yu,Yuan Zheng,Yewu Wang
Photodetectors based on two-dimensional materials and their van der Waals (vdW) heterojunctions usually have excellent optoelectronic performance and great potential applications. Herein, gallium (Aladdin, particles, 99.999% trace metal basis), selenium (Aladdin, powder, 99.999% trace metal basis), and iodine (Alfa Aesar, 99.999% trace metal basis) are the raw materials for the growth of gallium selenide (GaSe) single crystals by the chemical vapor transport method, in which iodine is the transport agent. Subsequently, GaSe nanoflakes are exfoliated from the grown bulk GaSe crystals by mechanical exfoliation. The n-Si/p-GaSe van der Waals vertical heterojunctions have been designed and fabricated for photodetection, which show good characteristics including a high responsivity of 1.74 A/W and a fast response/recovery time of 48 μs/88 μs under zero bias owing to their type-II band structure and built-in electric field. The results indicate that n-Si/p-GaSe vdW vertical heterojunctions are promising candidates in future ultrafast optoelectronic devices.
研究领域:
光电子学
·
材料科学
·
纳米技术
·
半导体器件
✓ 已验证
DOI
高影响因子
ORGANIC ELECTRONICS
·
2019
·
IF 3.495
Han Su,Lina Meng,Yucheng Liu,Yunxia Zhang,Mingxin Hu,Zhou Yang,Shengzhong (Frank) Liu
Increasing the carrier concentration as well as carrier life time could be effective ways to increase the photoresponse of a photoconductive type photodetector . In this paper, layer-structure photodetectors have been fabricated by connecting CH 3 NH 3 PbI 3 film with and without electron transport layer (SnO 2 and SnO 2 /PCBM bilayer). We found that the electron extraction at the electron transport layer and MAPbI 3 interface will boost the photocurrent and responsivity, and faster electron extraction will result in a higher photocurrent improvement. At the same time, the closer is the distance of the interface to the photogenerated electron-hole pairs, the larger is the photocurrent enhancement. The largest photocurrent increasement is almost 3 times the initial value, which increases from 1.54 μA to 6.10 μA.
研究领域:
材料科学
·
光子学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）