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CsSnBr3
ADVANCED MATERIALS · 2024 · IF 27.4

Bright and Efficient CsSnBr3 Light-Emitting Diodes Enabled by Interfacial Reaction-Assisted Crystallization

Jinyi Li,Yang Liu,Jiejun Zeng,Siyu He,Xitong Zhu,Xiaoyue Sun,Yizheng Jin

Tin-based perovskites are more environmentally friendly than their lead-based alternatives. Perovskite light-emitting diodes (PeLEDs) using iodide-based tin perovskites have achieved considerable advancements in efficiency. However, PeLEDs using bromide-based tin perovskites have not progressed as rapidly, primarily due to challenges in controlling their crystallization processes. Here, an interfacial reaction-assisted crystallization method is introduced to achieve bright and efficient CsSnBr 3 PeLEDs. It is started by forming an intermediate phase through the coordination of SnBr 2 with ethylenediamine derivatives. Subsequently, a protonation reaction is designed between the intermediate phase and the acidic polyethylenedioxythiophene: poly(styrene sulfonate) hole-transport layer to generate high-quality CsSnBr 3 films. Additionally, the use of potassium thiocyanate additives effectively enhances the photoluminescence efficiency of the CsSnBr 3 films. These efforts result in CsSnBr 3 -based PeLEDs achieving a maximum luminance of 787 cd m −2 and a peak external quantum efficiency of 0.91%, demonstrating the most efficient and brightest CsSnBr 3 -based PeLEDs to date. This work opens an avenue to better control the crystallization of tin-based perovskite.

CAS / MDL: 7261-70-3
研究领域: 材料科学 · 光电子学
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CHINESE JOURNAL OF CHEMICAL PHYSICS · 2023 ·Vol. 36 ·期 4 ·477-485 · IF 1

Systematic study on CsSnBr3 perovskite microcrystals: Chemical vapor deposition growth, structure, stability and optical properties

He Ting,Dong Na,Yao Yi,Xu Faqiang

Although lead-based halide perovskites have promising applications in optoelectronic devices, these applications are limited by the toxicity of the materials. Therefore, it is necessary to develop lead-free all-inorganic substitute such as tin-based halide perovskites in spite of the enormous challenges in their controllable synthesis and stability. Here, we report the controlled growth of high quality CsSnBr 3 microcrystals on SiO 2 /Si substrates by chemical vapor deposition method. The as-prepared products pre-dominantly show the morphology of triangle star and nail-like rod and the structure of cubic phase. The control of nucleation density and size of CsSnBr 3 microcrystals has been realized by varying the growth temperature. The results of air-exposed samples explain the structural instability of the tin-based perovskites due to the production of SnO. The power and temperature dependent photoluminescence spectra reveal that CsSnBr 3 microcrystals with different morphologies possess different exciton binding energies and produce different photoexcitation species due to the quantum confinement effect that changes the electron-hole effect.

研究领域: 材料科学 · 光学
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ACS Applied Materials & Interfaces · 2023 · IF 9.5

Highly Ambient Stable CsSnBr3 Perovskite via a New Facile Room-Temperature “Coprecipitation” Strategy

Luyu Cao,Si-Min Gu,Bomei Liu,Lin Huang,Jian Zhang,Yiwen Zhu,Jing Wang

Tin-based perovskites are becoming promising alternatives to lead-based perovskites with eco-friendly merit and tantalizing photophysical properties. Unfortunately, the lack of facile, low-cost synthesis approaches associated with extremely poor stability greatly restrict their practical applications. Herein, a facile room-temperature “coprecipitation” method utilizing ethanol (EtOH) solvent and salicylic acid (SA) additive is proposed for synthesizing highly stable cubic phase CsSnBr3 perovskite. Experimental results show that ethanol solvent and SA additive can not only effectively prevent the oxidation of Sn2+ during the synthesis processes but also stabilize the as-synthesized CsSnBr3 perovskite. These are mainly ascribed to the protection effect of ethanol and SA, which are attached on the surface of CsSnBr3 perovskite by coordinating with Br– and Sn2+ ions, respectively. As a result, CsSnBr3 perovskite can be obtained in open air and exhibits exceptional oxygen resistibility under moist air conditions (temperature: 24.2–25.8 °C; relative humidity: 63–78%). Absorption remains unchanged and photoluminescence (PL) intensity is vastly maintained (∼69%) after storage for 10 days, better than bulk CsSnBr3 perovskite film synthesized by spin-coating method whose PL intensity is decreased to 43% after storage for 12 h. This work represents a step toward stable tin-based perovskite by a facile and low-cost strategy.

研究领域: 材料科学 · 化学 · 光伏技术
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE · 2021 ·Vol. 218 ·期 21 ·2100501 · IF 1.981

Conductive Path Mechanism for Bipolar Resistive Switching Characteristics in Lead-Free Perovskite CsSnBr3-Based Nonvolatile Memories

Hongjun Wang,Hong Wei,Xiong Zeng,Jing Zhou,Yuanyuan Zhu

Halide perovskites are intensely studied due to their potential excellent properties in electronic devices. However, the toxicity of lead remains as an obstacle on their way toward large-scale applications. Herein, the lead-free all-inorganic perovskite CsSnBr 3 film is used as the switching layer to construct nonvolatile resistive switching (RS) memories and the underlying switching mechanism is systematically explicated. Both memories with Ag/CsSnBr 3 /Pt and Pt/CsSnBr 3 /Pt structures exhibit reproducible bipolar RS characteristics, including the large on/off ratios and low reset currents. The RS characteristics are attributed to the formation/rupture of nano-cone-shaped conductive paths under external voltage bias. In addition, compared with Pt/CsSnBr 3 /Pt device, the Ag/CsSnBr 3 /Pt device manifests lower operation set/reset voltages, revealing the formation of higher density or stronger conductive paths. This work might pave the way for the lead-free all-inorganic perovskite-based RS memory devices in high performance emerging commercial applications.

CAS / MDL: 7787-69-1
研究领域: 材料科学 · 电子器件 · 记忆体技术
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JOURNAL OF SOLID STATE CHEMISTRY · 2020 · IF 2.726

Preparation of CsSnBr3 perovskite film and its all-inorganic solar cells with planar heterojunction

Dong Fang,Yu Tong,Futing Xu,Baoxiu Mi,Dapeng Cao,Zhiqiang Gao

This paper reports the preparation of CsSnBr 3 perovskite by solid-phase reaction, and studies its properties and perovskite solar cell (PSC). Our CsSnBr 3 film is testified as perovskite with good crystalline quality, uniform morphology and being stable in air for 8 days. The device structure, i.e., FTO/TiO 2 /CsSnBr 3 /MoO 3 /Al, is a never-reported structure for CsSnBr 3 based PSC with planar heterojunction and without both the traditional organic hole transport layer and the expensive gold back-electrode. The device exhibits power conversion efficiency of 1.5% with very small forward and reverse scanning hysteresis, which is usually severe in PSC devices. Besides, in the work-discussion, we provide a couple of scientific equations with references, which are quite informative and instructive for the study of perovskite crystalline and semiconductor thin-film/solar cell.

CAS / MDL: 7787-69-1 1313-27-5
研究领域: 材料科学 · 太阳能 · 光伏技术 · 半导体物理
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Advanced Electronic Materials · 2020 ·Vol. 6 ·期 11 ·2000799 · IF 6.593

Fabrication of Flexible Resistive Switching Devices Based on Lead-Free All-Inorganic CsSnBr3 Perovskite Using a One-Step Chemical Vapor Deposition Method

Hongjun Wang,Jiaquan Lin,Yuanyuan Zhu,Xiong Zeng,Hong Wei,Pengwei Cheng,Hongbing Lu,Yong Liu,Rui Xiong

Resistive switching (RS) devices have evolved as one of the most promising candidates in the memory filed due to their excellent endurance and retention, fast switching speed, and extra-high storage density capability. However, the coexistence of toxic lead cations and low RS performance have largely limited the application of halide perovskite in nonvolatile memory filed. Herein, the lead-free all-inorganic perovskite CsSnBr 3 films are synthesized on flexible polyimide (PI) substrates through a one-step chemical vapor deposition (CVD) method to construct environmentally friendly RS devices. The RS devices with Pt/CsSnBr 3 /Pt/PI structure exhibit reliable and reproducible bipolar RS characteristics with an ultralow set/reset voltage (≈0.2/−0.15 V) and a high on/off ratio (≈10 5 ). Additionally, the RS devices are further tested by robust current–voltage curves under consecutive flexing cycles, exhibiting high mechanical bendability and electrical reliability. This work demonstrates that lead-free all-inorganic perovskite CsSnBr 3 film is a good candidate as switching media for applications in the next-generation environmentally friendly RS devices and opens an avenue for future flexible electronics.

CAS / MDL: 7787-69-1
研究领域: 材料科学 · 电子工程 · 环境科学
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Solar RRL · 2022 ·Vol. 7 ·期 3 ·2200784 · IF 9.173

Interfacial Electronic and Photovoltaic Performance of a Novel Lead-Free Z-Scheme CsSnBr3/MoSe2 Perovskite Heterostructure: A Theoretical and Experimental Study

Minjie Zhang,Yanming Lin,Jiayi Li,Xinru Wei,Ying Peng,Zhengkun Wang,Zhenyi Jiang

Sn-based perovskite materials with nontoxic, low cost, and unique structure have attracted much attention. However, their efficiency only reaches 14.09% due to the higher carrier recombination rate and short carrier lifetime in photovoltaic applications. Herein, the interfacial electronic structure, optical absorption, interfacial charge transfer mechanism, and photovoltaic performance of the CsSnBr 3 /MoSe 2 perovskite heterostructure are systematically investigated by theoretical calculation and experimental observation. The results indicate that the strong coupling and hybridization of interfacial electronic states can lead to a narrowing bandgap, which induces an excellent optical absorption of the CsSnBr 3 /MoSe 2 perovskite heterostructure in the visible spectrum. Excitingly, the charge transfer at the interface forms a built-in electric field, which can effectively promote the interfacial charge transfer between CsSnBr 3 (001) and MoSe 2 monolayer, complying with a Z-scheme mechanism. Moreover, the photovoltaic performance of the CsSnBr 3 /MoSe 2 heterostructure significantly enhances due to excellent light absorption and Z-scheme system for extending carrier lifetime. An effective strategy for designing highly efficient Sn-based perovskite solar cells is reported.

CAS / MDL: 7787-69-1 10031-24-0
研究领域: 材料科学 · 光伏技术 · 理论计算
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Processes · 2023 ·Vol. 11 ·期 5 ·1398 · IF 3.5

Effective Malachite Green Degradation over the Noble Metal-Doped and MOF-Coupled CsSnBr3 Nanocomposite Catalyst

Bohan Ai,Mingsheng Luo,Iltaf Khan

Environmental protection laws require effective and green solutions to tackle water and air pollution issues. For this purpose, perovskite photocatalytic materials have proven to be a promising solution. In this study, CsSnBr3perovskite, coupled with ZIF-67 and decorated with noble metal Au, was shown to effectively enhance the charge separation and increase the light-absorbing capacity, and thus make the photocatalytic reaction more efficient by surface plasmon resonance. Characterization results from XRD, FTIR, and UV-visible diffuse reflectance spectroscopy indicated that a mixture of cubic and tetragonal crystalline phases was found in the prepared catalyst material. XPS also revealed that in the presence of two oxidation states for tin (Sn), the Au 4f XPS peaks of Au NPs coincided with those retained in colloidal Au particles. Using malachite green as a model compound, organic pollutant photocatalytic degradation tests proved that CsSnBr3generated good photocatalytic activity for aromatic pollutant degradation. In this research, the synthesized 4Au-7ZIF-CsSnBr3catalyst yielded an MG degradation rate twice as high as the unpromoted CsPbBr3.

研究领域: 环境科学 · 材料科学 · 化学工程
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OPTICAL MATERIALS · 2025 · IF 4.2

Impact of phospho-oxygen derivatives on crystallinity and optoelectronic properties of CsSnBr3 LED

Haotian Gu,Tenglong Sun,Yining Feng,Muzhi Cai,Jintian Tang,Shiqing Xu

Tin-based perovskite light-emitting diodes (PeLEDs) have emerged as promising candidates for future optoelectronic applications due to their non-toxic properties. However, their electroluminescence (EL) performance still lags behind that of lead-based PeLEDs, primarily due to the poor crystal quality of tin-based perovskite films. In this work, inspired by advances in lead-based PeLEDs, we integrated Lewis base derivatives with phospho-oxygen functional groups of varying substituents into tin-based perovskites. This approach allowed us to analyze the interaction between these groups and the perovskite matrix. The introduction of additives at optimal concentrations reduced the grain size of CsSnBr 3 , improved its grain morphology, and enhanced the film quality, resulting in better photoelectric performance. Consequently, the developed red tin-based PeLEDs demonstrated a five-fold increase in maximum brightness (50 cd/m 2 ) and a ten-fold increase in operational lifetime (79.2 s), alongside stable color emission under varying voltages. This work offers a viable pathway for advancing the performance and stability of tin-based PeLEDs, paving the way for future innovations in this field.

研究领域: 材料科学 · 光学工程
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CHEMISTRY OF MATERIALS · 2017 · IF 9.466

Controlled Synthesis of Lead-Free Cesium Tin Halide Perovskite Cubic Nanocages with High Stability

Aifei Wang,Yanyan Guo,Faheem Muhammad,Zhengtao Deng

Hollow nanocrystals have attracted considerable attention in many areas of materials science because of their unique geometry, large surface area, high loading capacity and low density, and potential applications in catalysis, energy storage, drug delivery, and molecular separation. So far, numerous hollow nanostructured materials, such as noble metals, metallic oxides, hydroxides, and chalcogenides, have been reported. However, there is no report about the hollow metal halide perovskite nanocrystals yet. Herein, for the first time, we report the controlled synthesis of metal halide perovskite hollow nanocrystals, i.e., CsSnBr3 cubic nanocages, through a facile hot-injection colloidal approach. The formation of nanocages was controlled by rationally choosing the precursors and reaction temperature and was achieved through the self-assembly driven process. The as-synthesized CsSnBr3 nanocages exhibit excellent oxygen resistibility under desiccation conditions. Furthermore, treatment of CsSnBr3 nanocages with perfluorooctanoic acid results in an improved stability against moisture, oxygen, and light. This work represents a step toward hollow nanocrystals of metal halide perovskites for optical, electronic, and optoelectronic applications.

研究领域: 材料科学 · 纳米技术 · 光电子学
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PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES · 2021 · IF 3.382

Tin-based all-inorganic perovskite photodetectors fabricated by chemical vapor deposition

Wei-Long Xu,Hongchun Yuan,Xiao-Yu Yang,Yannan Zhang,Min Zheng

Tin-based perovskites are the promising alternative applications in environment-friendly optoelectronic devices when compared with Pb-based perovskites . All-inorganic tin-based perovskite (CsSnBr 3 ) films were prepared by chemical vapor deposition (CVD) method. The film deposited at 500 °C shows high crystalline quality with the grain size close to 1 μm and uniform surface coverage. The optical properties of CsSnBr 3 film were investigated by steady-state and time-resolved photoluminescence spectra in detail. The short photoluminescence lifetime may be attributed to the defects at the molecular level rather than the grain boundaries. Consequently, the photodetector based on CsSnBr 3 film exhibits good stability and high on/off ratio about 320.

研究领域: 材料科学 · 光电子学 · 光子学
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Small · 2025 · IF 12.1

Plasma-Enhanced Grain Growth and Non-Radiative Recombination Mitigation in CsSnBr3 Perovskite Films for High-Performance, Lead-Free Photodetectors

Zewen Lin,Zhenxu Lin,Haixia Wu,Rui Huang,Jie Song,Kaitao Chen,Li Xia,Yi Zhang,Huihong Lin,Hongliang Li,Dejian Hou,Yanqing Guo,Paul K. Chu

Tin-based halide perovskites represent a highly promising and eco-friendly alternative to lead-based materials with significant potential for optoelectronic applications. However, their advancement is hampered by challenges such as poor film crystallinity and unintended self-doping. Herein, this work reports the fabrication of high-quality CsSnBr 3 perovskite films by plasma-assisted chemical vapor deposition (PACVD), which improves the film quality. The precise control of the ammonia plasma not only promotes grain growth and reduces grain boundaries, but also eliminates defect states in the film, mitigates oxidation of Sn 2+ , suppresses sub-bandgap absorption, and reduces non-radiative recombination. Consequently, the photodetectors deliver exceptional performance, including a responsivity of 11.2 A W −1 , a detectivity of 2.5 × 10 11 Jones, and an ultrafast response time of 1/3.3 ms. Notably, certain key metrics, including detectivity (D*) and response time, significantly surpass those of all previously reported photoconductor-type Sn-based perovskite photodetectors. The results offer not only a novel strategy for enhancing the quality and optoelectronic performance of CsSnBr 3 films but also a scalable platform for the development of high-performance, lead-free perovskite materials and devices. The new knowledge opens new possibilities for the design and fabrication of sustainable materials for advanced optoelectronic applications.

CAS / MDL: 7787-69-1 10031-24-0
研究领域: 材料科学 · 光电子学 · 可再生能源
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