ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Xiaohui Zhao,Qian Wu,Meiqi Long,Chao Zhi,Lin Hou,Xia Wei
Wearable thermoelectric devices exhibit great potential in utilizing the temperature gradient between the human body and the surrounding environment to harvest energy, providing a sustainable and maintenance-free power source for wearable applications. However, traditional two-dimensional (2D) flexible thermoelectric devices are inherently limited by their planar configurations, which restrict them to in-plane heat collection and hinder the effective capture of out-of-plane temperature gradients. This limitation often results in a reduced thermoelectric conversion efficiency in practical wearable applications. To address this issue, a unique braided fabric-based thermoelectric generator (TEG) with superior wearing comfort and mechanical flexibility was designed to harvest out-of-plane temperature gradients in this study. Segmented p- and n-type thermoelectric coatings were applied on the braiding yarn to fabricate thermoelectric legs. The braided fabric bracelet TEG containing 12 p-n pairs could generate a maximal open-circuit of 8.42 mV at a temperature difference of 30 K. This study presents an innovative approach that may facilitate the advancement of TEGs for practical wearable applications.
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高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2026
·
IF 19.9
Xiaodi Jia,Shujie Jiao,Hengyu Shang,Yimin Jin,Zehao Shi,Ming Ge,Penghui Wang,Junjie He,Khurshid Tashpulatov,Dongbo Wang,Shiyong Gao,Liancheng Zhao
As machine vision increasingly demands high-performance optoelectronics, solution-processed perovskites (PVKs) integrated on silicon (Si) offer a viable route to surpass conventional photodetector (PD) limits in ultraviolet (UV) sensitivity and spectral selectivity the integration. However, traditional monolithic integration is strictly hindered by severe lattice mismatch and interfacial defects. Here, we report a self-powered PVK/Si PD enabled by an engineered B i 2 Bi 2 ${\rm Bi}_{2}$ T e O 6 TeO 6 ${\rm TeO}_{6}$ interlayer. The [ B i 2 O 2 ] 2 + [ Bi 2 O 2 ] 2 + ${[{\rm Bi}_{2}{\rm O}_{2}]}^{2+}$ layers and distorted corner-sharing [ T e O 4 ] 2 − [ TeO 4 ] 2 − ${[{\mathrm{TeO}}_{4}]}^{2-}$ octahedra promote high-quality PVK crystallization and interfacial compatibility, while simultaneously generating a pyro-phototronic effect, thereby amplifying the photoelectric conversion process. As a result, a dual-band PD is demonstrated, exhibiting strong pyro-phototronic enhancement (505 % at 320 nm) in the UV and exceptional specific detectivity in the visible regime ( 6 . 5 × 1 0 1 1 6.5 × 10 11 $6.5\times 10^{11}$ Jones at 550 nm), outperforming conventional Si-based PDs in both UV sensitivity and spectral selectivity. Integrating this capability with a convolutional neural network (CNN), we further develop a dual-wavelength intelligent anti-counterfeiting recognition platform based on CNN, achieving robust authentication performance. This work establishes a general interfacial strategy for integrating PVKs on Si and highlights the combined advantages of pyro-phototronics and intelligent optical recognition for next-generation photodetection and Si-compatible optoelectronic systems.
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Materials Today Nano
·
2026
·
IF 7.6
Wen He,Duoduo Ling,Yanghao Bi,Dongbo Wang,Lei Chen,Yinze Zhang,Qiudan Geng,Ali Raza,Yiming Zhao,Sihan Zhang,Xiaoxue Yu,Bangsheng Li,Lianshe Fu,Jinzhong Wang
Electron beam evaporation and post-annealing enable low-cost, high-quality Bi 2 Te 3 /GaN heterojunction fabrication. • The Bi 2 Te 3 /GaN photodetector achieves a specific detectivity of 2.01 × 10 12 Jones at 0 V. • Built-in field of heterojunction separates photogenerated carriers for self-powered UV-NIR detection. • This device is used as a single-pixel sensor and achieves high-quality multi-wavelength imaging. Self-powered broadband photodetectors are critical for energy-efficient optoelectronics in the Internet of Things, environmental sensing, and wearable imaging, yet achieving broadband response with high specific detectivity in a device through a scalable fabrication method remains a major challenge. In this work, we report a Bi 2 Te 3 /GaN heterojunctionphotodetector that integrates narrow- and wide-bandgap semiconductors to realize self-powered operation from ultraviolet to near infrared region. The Bi 2 Te 3 /GaN heterostructure is fabricated by depositing a homogeneous Bi 2 Te 3 film with high crystallinity on a GaN substrate through the electron beam evaporation method followed by a post-annealing. Without any external bias, the photodetector exhibits a broadband specific detectivity above 10 9 Jones and a fast response lower than 100 m s in the 367-850 nm spectral range, attributed to efficient photogenerated carrier separation across the heterojunctiondue to the built-in electric field at the interface. Under 367 nm light irradiation, the device achieves a responsivity of 80.39 mA/W and a specific detectivity of 2.01 × 10 12 Jones. The device also demonstrates excellent cycling durability, maintaining stable photoresponse over 100 cycles at 638 nm illumination, and supports high-resolution and multi-wavelength imaging. This work provides a cost-effective, scalable strategy for constructing Bi 2 Te 3 /GaN heterojunctions and highlights the potential of Bi 2 Te 3 -based detectors for next-generation self-powered broadband photodetection technologies. Download: Download high-res image (369KB) Download: Download full-size image
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ACS Applied Electronic Materials
·
2026
·
IF 4.7
Yujuan Pei,Shuo Gong,Miaoran Kang,Hanxu Zhang,Weilong Deng,Qiang Fu,Yu Sui,Xianjie Wang,Bo Song
Bi0.5Sb1.5Te3 (BST) has attracted much attention owing to its special physical properties, including strong surface carrier mobility and narrow band gap. In this study, the photoelectric performance of the photodetector based on BST/Si heterojunctions was systematically investigated. Our photodetector accomplishes a large self-powered position sensitivity (405 mV/mm) and a detectivity of 3.1 × 1011 Jones. The relaxation times of the lateral photovoltaic voltage reached 0.106 μs. The BST/Si heterojunction achieves broad-spectrum photodetection covering a spectrum from visible light to the infrared wavelength range, with a photoelectrical bandwidth exceeding 15 kHz. This research demonstrates the considerable potential of ultrafast response photodetectors for self-powered position-sensitive detectors, imaging, and object recognition in future.
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Materials
·
2022
·Vol. 15
·期 15
·5331
·
IF 3.748
Min Sun,Pengyu Zhang,Qingmin Li,Guowu Tang,Ting Zhang,Dongdan Chen,Qi Qian
N-type bismuth telluride (Bi2Te3) based thermoelectric (TE) fibers were fabricated by thermal drawing and Bridgman annealing, and the influence of Bridgman annealing on the TE properties of n-type Bi2Te3-based TE fibers was studied. The Bridgman annealing enhanced the electrical conductivity and Seebeck coefficient because of increasing crystalline orientation and decreasing detrimental elemental enrichment. The TE performance of n-type Bi2Te3-based TE fibers was improved significantly by enhancing the power factor. Hence the power factor increased from 0.14 to 0.93 mW/mK2, and the figure-of-merit value is from 0.11 to 0.43 at ~300 K, respectively.Keywords:n-type Bi2Te3;thermoelectric fibers;thermal drawing;Bridgman annealing
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高影响因子
JOURNAL OF NANOPARTICLE RESEARCH
·
2020
·Vol. 22
·期 9
·1-14
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IF 2.132
Li Ling,Jiang Xiangqian,Ban Chuncheng,Xie Dequan,Chen Weiping,Song Keguan,Liu Xiaowei
Thermoelectric (TE) material nanocomposite film is widely used in the design of many kinds of wearable flexible device and portable sensors. Herein, BNNT/Bi 2 Te 3 and BCNNT/Bi 2 Te 3 TE nanocomposite films were successfully fabricated by a cost-effective hot pressing and millipore membrane filter (HPMMF) method. Their thermoelectric performance was systematically investigated at room temperature, the highest power factor of the TE nanocomposite film was 1843.2 nW/mK 2 when the film contained 0.006 wt.% BCNNT. The Seebeck coefficient of the thermoelectric nanocomposite film will reach up 205 μV/K. The power factor of BCNNT/Bi 2 Te 3 TE nanocomposite film is 17.2 times higher than that of BNNT/Bi 2 Te 3 nanocomposite film and 14 times higher than that of Bi 2 Te 3 film. It is promising to be used in many situations such as flexible wearable device and solar cell thermoelectric power generation. Graphical abstract
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Journal of Materiomics
·
2020
·
IF 5.797
Min Sun,Guowu Tang,Bowen Huang,Zhongjia Chen,Yu-Jun Zhao,Hanfu Wang,Ziwen Zhao,Dongdan Chen,Qi Qian,Zhongmin Yang
Bismuth telluride (Bi 2 Te 3 ) has attracted much attention in the field of thermoelectrics since it is one kind of commercial room-temperature thermoelectric material. Herein three kinds of Bi 2 Te 3 thermoelectric fibers with internal tensile stress are fabricated utilizing an optical fiber template method. The effects of internal stress on the microstructure and the electrical transportation of Bi 2 Te 3 thermoelectric fibers are investigated. The Bi 2 Te 3 cores in the fibers are highly crystalline and possess a tensile nanosheet structure with preferential orientation as evidenced by X-ray diffraction and Raman studies. Tensile stress can enhance electrical properties of the fibers. And a paper cup generator covered with 20 pieces of optimized fibers provides a μW-level output power. It is inferred that tensile stress tuning can be an effective tool for the material optimization of thermoelectric performance.
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Small
·
2023
·
IF 13.3
Ding Ding,Qian Wu,Qian Li,Yixun Chen,Chao Zhi,Xia Wei,Jinmei Wang
Wearable thermoelectric generators (TEGs) have exhibited great potential to convert the temperature gradient between the human body and the environment into electrical energy for maintenance-free wearable applications. A 2D planar device structure is widely employed for fabricating flexible TEGs due to its simple structure and facile fabrication properties. However, this device configuration is more appropriate for utilizing in-plane temperature differences than the out-of-plane direction, which limits their application in wearable cases since the temperature difference between the human body and the environment is in the out-of-plane direction. To solve this problem, a novel fabric-based TEG structure that can utilize the out-of-plane temperature gradient is proposed in this work. By introducing thermally conductive components in the generator, the out-of-plane temperature difference can be switched to the in-plane direction, which can be further utilized for 2D planar devices in wearable applications. The prepared thermoelectric fabric prototype with only 12 p-type TE legs exhibits a maximum open-circuit voltage of 4.69 mV and an output power of 39.7 nW at a temperature difference of 30 K. This strategy exhibits a high degree of versatility and can be readily applied to other 2D planar TEGs, thus expanding their potential application in wearable technology.
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高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Ling Li,Ningqiang Shi,Xiangqian Jiang,Weiping Chen,Chuncheng Ban,Jiandong Hao
Energy recovery and reuse, industrial waste heat, and thermal energy recovery and conversion in emerging electronic devices are topics of widespread interest. Flexible composite thermoelectric (TE) films have become the key to TE conversion, and many studies and synthesis methods related to them have made great progress. However, little research has been performed on the corresponding composites of typical TE materials with low-dimensional nanotubular materials, particularly modulation of the overall TE properties using doped low-dimensional nanotubular materials. In this work, high-quality bismuth telluride (Bi2Te3) nanowires and boron nitride nanotubes (BNNTs) were prepared using electrolytic deposition and high-temperature catalytic deposition, respectively. Bi2Te3–BNNTs composite films were prepared using a solvent hot pressing method. The Bi2Te3–BNNTs composite film conductivity reached 179.6 S/cm at room temperature (300 K), the corresponding Seebeck coefficient was 171.4 μV/K, and the power factor (PF) was 52.8 nW/mK2. Carbon doping of BNNTs resulted in carbon–boron nitride nanotubes (BCNNTs), and Bi2Te3–BNNTs composite films were prepared. The Bi2Te3–BCNNTs composite films obtained a conductivity of 4629.6 S/cm, at room temperature (300 K), a corresponding Seebeck coefficient of 181.2 μV/K, and a PF of 1520.0 nW/mK2. This study has important reference value for the application of TE conversion. Moreover, the electrical conductivity decreased by no more than 10% after 400 cycles of bending tests, and the electrical conductivity showed signs of recovery after repressing thermally, which undoubtedly proves that Bi2Te3–BCNNTs composite films have good flexibility and thermal stability, and this has contributed to the application and promotion of flexible thermoelectric materials.
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高影响因子
CERAMICS INTERNATIONAL
·
2018
·
IF 3.057
Bingsheng Du,Jing Wu,Xiaofang Lai,Yuan Deng,Shufang Wang,Haitao Liu,Jiao Liu,Jikang Jian
Highly oriented Bi 2-x Sb x Te 3 (x = 0, 0.7, 1.1, 1.5, 2) ternary nanocrystalline films were fabricated using vacuum thermal evaporation method. Microstructures and morphologies indicate that Bi 2-x Sb x Te 3 films have pure rhombohedral phase with well-ordered nanopillars array. Bi, Sb and Te atoms uniformly distributed throughtout films with no precipitation. Electrical conductivity of Bi 2-x Sb x Te 3 films transforms from n-type to p-type when x > 1.1. Metal-insulator transition was observed due to the incorporation of Sb in Bi 2 Te 3 . Bi 2-x Sb x Te 3 film with x = 1.5 exhibits optimized electrical properties with maximum electrical conductivity σ of 2.95 × 10 5 S m −1 at T = 300 K, which is approximately ten times higher than that of the undoped Bi 2 Te 3 film, and three times higher than previous report for Bi 0.5 Sb 1.5 Te 3 films and bulk materials. The maximum power factor PF of Bi 0.5 Sb 1.5 Te 3 nanopillars array film is about 3.83 μW cm −1 K −2 at T = 475 K. Highly oriented (Bi,Sb) 2 Te 3 nanocrystalline films with tuned electronic transport properties have potentials in thermoelectric devices.
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APL Materials
·
2018
·Vol. 6
·期 3
·
IF 4.127
Sun Min,Qian Qi,Tang Guowu,Liu Wangwang,Qian Guoquan,Shi Zhenguo,Huang Kaimin,Chen Dongdan,Xu Shanhui,Yang Zhongmin
Bi 2 Te 3 -based materials have been reported to be one of the best room-temperature thermoelectric materials, and it is a challenge to substantially improve their thermoelectric properties. Here novel Bi 2 Te 3 core fibers with borosilicate glass cladding were fabricated utilizing a modified molten core drawing method. The Bi 2 Te 3 core of the fiber was found to consist of hexagonal polycrystalline nanosheets, and polycrystalline nanosheets had a preferential orientation; in other words, the hexagonal Bi 2 Te 3 lamellar cleavage more tended to be parallel to the symmetry axis of the fibers. Compared with a homemade 3-mm-diameter Bi 2 Te 3 rod, the polycrystalline nanosheets’ preferential orientation in the 89- μ m-diameter Bi 2 Te 3 core increased its electrical conductivity, but deduced its Seebeck coefficient. The Bi 2 Te 3 core exhibits an ultrahigh ZT of 0.73 at 300 K, which is 232% higher than that of the Bi 2 Te 3 rod. The demonstration of fibers with oriented nano-polycrystalline core and the integration with an efficient fabrication technique will pave the way for the fabrication of high-performance thermoelectric fibers.
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高影响因子
POWDER DIFFRACTION
·
2018
·Vol. 33
·期 2
·115-120
·
IF 0.519
Jing Wu,Jikang Jian,Shufang Wang,Shuang Guo,Renbo Lei,Haitao Liu
The Bi4Te3 films with well-ordered orientation and microstructure were successfully prepared on SiO2 substrate by a vacuum thermal evaporation deposition technique for the first time. We discussed the effects of evaporation temperature and substrate temperature on the phase and its well-ordered growth of Bi4Te3 films. The formation of Bi4Te3 phase is owing to the differences of the saturated vapor pressure. The thermoelectric transport properties of the Bi4Te3 films were investigated and the (00l)-oriented nanopillars array film has a better electrical transport performance, whose value of PF is 0.032 mWm−1 K−2 at 339 K, approaching twice that of the non-oriented ordinary film. The enhanced electrical properties of Bi4Te3 films could be achieved via the high-crystallinity well-controlled (00l)-oriented nanopillars array.
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