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APPLIED SURFACE SCIENCE · 2024 · IF 6.3

Liquid-phase controlled synthesis of Sb-derived heterostructures

Qiang Zhang,Qian Chen,Jiacheng Cao,Peiyuan Liu,Jian Wang,Zhiwei Yang,Jinhao Zhang,Jian Zhang,Lin Wang,Xiao Huang

Antimony (Sb) based compounds such as Sb 2 O 3 and Sb 2 S 3 have shown promises in electronics, catalysis and sensing devices. Their functional performances can be further improved by integration with other materials to from composites or heterostructures, which however, usually require tedious procedures with poor morphology control. Herein, we realized direct hydrothermal synthesis of Sb 2 O 3 /SnO 2 heterostructures and Sb 2 S 3 /SnS 2 heterostructures by using liquid-phase exfoliated two-dimensional (2D) Sb nanoflakes as precursors. Compared to directly using SbCl 3 salt as the reactant, using the Sb nanoflakes enabled the slow release of Sb 3+ ions which benefited the better controlled nucleation and growth of Sb 2 O 3 (or Sb 2 S 3 ) acting as growth templates for the further deposition of SnO 2 (or SnS 2 ). As a demonstration, the as-prepared Sb 2 S 3 /SnS 2 heterostructures were employed for photocatalytic methylene blue (MB) degradation, which exhibited a faster degradation rate compared to Sb 2 S 3 or SnS 2 alone. Our work offers an alternative strategy with elemental 2D materials as precursors for the preparation of heterostructured functional materials.

研究领域: 材料科学 · 化学工程 · 纳米技术
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CERAMICS INTERNATIONAL · 2017 · IF 2.986

Influence of solvent on the structure and electrochemical performances of Sn-based anode for lithium-ion battery

Lixiong Yin,Simin Chai,Jianfeng Huang,Xingang Kong,Jia Wang,Peijie Bai

In present work, Sn-based composites have been successfully synthesized by the solvothermal method. The composition and content of the solvent have crucial influences on the phase composition, crystallinity and morphology of the samples. It is found that the nanoflakes assembling to the spherical SnS 2 /SnO 2 obtained in deionized water (DI w) gradually convert to nanoparticles in anhydrous ethanol (AE) solvent. The hierarchical SnS 2 /SnO 2 composites obtained in AE solvent exhibit excellent electrochemical performances. The initial discharge capacity of the anode can reach to 1420.06   mA   h   g −1 at 100   mA   g −1 for lithium-ion batteries (LIBs), and the capacity can maintain 588.15   mA   h   g −1 after 50 cycles. Compared with other Sn-based anode materials , the SnS 2 /SnO 2 sample obtained in the AE solvent can still retain a stable discharge capacity of 559.16   mA   h   g −1 even at 800   mA   g −1 . The results obtained in the work reveal the influence of the solvent on the morphology of Sn-based samples and the potential of the sphere-like SnS 2 /SnO 2 structure as LIBs anode.

CAS / MDL: 1313-84-4
研究领域: 材料科学 · 电化学
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RSC Advances · 2015 ·Vol. 5 ·期 129 ·107088-107097 · IF 3.84

BiOCl/SnS2 hollow spheres for the photocatalytic degradation of waste water

Hui Meng,Tingting Wang,Xiang Yu,Yi Zhu,Yuanming Zhang

The doping effect of a new dopant to BiOCl as photocatalyst is studied. SnS2 as a narrow-band-gap semiconductor is used to tune the electronic and band structure of wide-band-gap BiOCl. BiOCl/SnS2 hollow spheres are synthesized by a facile and economic one-pot hydrothermal method. The shell of the hollow spheres is composed by BiOCl and SnS2, but the outermost layer is BiOCl. BiOCl/SnS2 hollow spheres exhibit much higher photocatalytic activity than pure SnS2 and BiOCl in the degradation of rhodamine-B under visible light and sun-light irradiation. The improvement is explained by the band structure tuning effect by SnS2 and the morphological benefits of the hollow sphere structure.

研究领域: 材料科学 · 环境工程 · 物理化学 · 纳米科技 · 光催化
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NANO · 2019 · IF 1.293

One-Step CVD Synthesis of Few-Layer SnS2/MoS2 Vertical Heterostructures

Hongxiao Zhao,Yong Yan,Xiaohui Song,Aodi Dong,Jian Su,Huimin Jia

Constructing van der Waals (vdW) heterostructures with various-layered two-dimensional (2D) materials is attractive to design various materials and devices. For controllable fabrication of vdW heterostructures, it is very important to make the growth process clear. In this work, SnS 2 /MoS 2 vertical heterostructures were synthesized by the one-step chemical vapor deposition (CVD) method. The bottom MoS 2 triangle layers can be partially or completely covered by SnS 2 layers. The interlayer charge separation was also observed in the heterostructures by photoluminescence (PL) spectroscopy. The growth mechanism of SnS 2 /MoS 2 vertical heterostructures was also discussed for the first time. MoS 2 triangle layers form on the substrates at first and then grow a top layer of SnS 2 . This study will provide an important and practical method, as a guidance to prepare high-quality vertical heterostructures.

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ADVANCED FUNCTIONAL MATERIALS · 2024 · IF 18.5

Spin-Coating Deposited SnS2 Thin Film-Based Memristor for Emulating Synapses

Jiang Feng,Jiaming Fan,Zijian Zhang,Yu Gao,Song Xue,Gangri Cai,Jin Shi Zhao

2D materials have garnered significant attention owing to their substantial potential across various applications, including thin-film electronics, optoelectronics, and sensor devices, particularly, the synthesis and deposition methods of the 2D materials are crucial. In this study, thin films of tin disulfide (SnS 2 ), a layer-structured metal dichalcogenide, are deposited on an indium tin oxide (ITO) glass substrate through a spin-coating process to prepare a sandwich-structured resistive switching (RS) device (ITO/SnS 2 /ITO) by following magnetron sputtering of ITO as top electrode. Notably, the solution-phased spin-coating deposition method provides an efficient approach to enhance device performance through ion doping. By incorporating calcium ions (Ca 2+ ), the devices exhibit the potential to achieve outstanding resistive switching performance and synapse functionality. With a DC sweep, an on/off resistance ratio exceeding 100 can be sustained without degradation for up to 5000 cycles. Furthermore, the devices exhibit diverse synaptic functions, including short-term and long-term plasticity (STP, LTP) in both potentiation and depression processes, spike-timing-dependent plasticity (STDP), and paired-pulse facilitation (PPF). The transition in electrical resistance and synaptic function can be attributed to the migration of doped Ca 2+ along the grain boundary and interlayer space of layer-structured SnS 2 films.

CAS / MDL: 12135-76-1
研究领域: 材料科学 · 神经形态计算 · 电子器件 · 纳米技术
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IONICS · 2019 ·Vol. 26 ·期 2 ·579-588 · IF 2.289

Improve electrochemical performances of SnS2/C by destroying the crystal structure

Guan Huibin,Zeng Tianbiao,Zhang Chuhong

SnS 2 -based materials are potential anodes of sodium ion batteries (SIBs) due to their high specific capacity, high theoretical coulombic efficiency, and low toxic. Herein, we demonstrate an effectual strategy to improve the integral electrochemical performances of SnS 2 /C by decreasing crystallinity; the Na ions diffuse coefficient, reversible capacity, and rate capacity were increased by a large margin. At 100 mA g −1 , un-milled SnS 2 /C, direct-milled SnS 2 /C, and SnS 2 /C milled with NaCl were delivered about 311, 384, and 509 mAh g −1 at 100th cycle, and at 500 mA g −1 , the capacity vanish ratio in corresponding SnS 2 /C were 0.414%, 0.552%, and 0.292% per cycle from 2nd to 100th cycle. It is expected that the simple synthesize method may provide some inspiration to SnS 2 -based anode research.

研究领域: 材料科学 · 电化学
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Nanomaterials · 2019 ·Vol. 9 ·期 9 ·1244 · IF 4.034

Production of SnS2 Nanostructure as Improved Light-Assisted Electrochemical Water Splitting

Haizeng Song,Han Wu,Yuan Gao,Ka Wang,Xin Su,Shancheng Yan,Yi Shi

Tin disulfide (SnS2) has gained a lot of interest in the field of converting solar energy into chemical fuels in light-assisted electrochemical water splitting due to its visible-light band gap and high electronic mobility. However, further decreasing the recombination rate of electron-hole pairs and increasing the density of active states at the valence band edge of the photoelectrodes were a critical problem. Here, we were successful in fabricating the super-thin SnS2nanostructure by a hydrothermal and solution etching method. The super-thin SnS2nanostructure as a photo-electrocatalytic material exhibited low overpotential of 0.25 V at the current density of −10 mA·cm−2and the potential remained basically unchanged after 1000 cycles in an H2SO4electrolyte solution, which was better than that of the SnS2nanosheet and SnS/SnS2heterojunction nanosheet. These results show the potential application of super-thin SnS2nanostructure in electrochemical/photo-electrocatalytic field.Keywords:layered semiconductor;solution etching;SnS2nanostructure;light-Assisted electrochemical water splitting

研究领域: 材料科学 · 能源科学
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Microsystems & Nanoengineering · 2025 ·Vol. 11 ·期 1 ·246 · IF 9.9

Two-dimensional SnS2 single crystal for sensitive NO2 detection at room temperature

Guo Chenfei,Liu Lin,Cai Zhengyang,Wang Yingyi,Guan Kejie,Sun Fuqin,Zhou Weifan,Gou Xiaoshuang,He Xiaoqian,Wang Xiaowei,Zhang Ting

Two-dimensional (2D) materials are intensively studied as promising materials for gas sensors owing to their large surface area and low working temperature. In this work, we report the synthesis of a layered SnS 2 single crystal by a chemical vapor deposition (CVD) approach for NO 2 sensing. By tuning the growth temperature, high-quality crystals with a lateral size over 3 mm are obtained in 30 min. The 2D SnS 2 sensor with optimized thickness (~15 nm) shows a low detection limit (2 ppb), a fast recovery time (66 s/1 ppm), and a high response (~4702% @ 1 ppm NO 2 ) at room temperature (RT) under UV illumination. An in-situ Kelvin probe force microscope is employed to reveal the high selectivity of SnS 2 through qualitative and semi-quantitative analysis of charge transfer behavior, including the directions and amount of charge transfer, upon exposure to different gases. In-situ Raman and first-principles density functional theory calculations further confirm the sensing mechanism toward NO 2 . Both experimental and theoretical results suggest that 2D SnS 2 holds promising potential as an RT NO₂ sensing material.

CAS / MDL: 18282-10-5
研究领域: 材料科学 · 气体传感器 · 纳米技术 · 表面科学 · 理论化学
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Photonics · 2026 ·Vol. 13 ·期 8 ·767 · IF 2.1

Self-Powered Broadband Photodetector Based on MoSe2/SnS2 Van der Waals Heterostructure

Donglin Wang,Tianhao Feng,Ziyan Li,Xuezhen Zhai,Dewei Liu,Jimin Shang,Lamei Zhang

The increasing demand for broadband and self-powered optoelectronic devices has stimulated the development of two-dimensional (2D) material-based photodetectors. Here, we construct a self-powered photodetector based on a MoSe2/SnS2van der Waals (vdW) heterostructure. The unique combination of MoSe2and SnS2provides complementary light absorption and a type-II band alignment, which generates an interfacial built-in electric field to facilitate photogenerated carrier separation and transport, enabling efficient self-powered operation without external bias. The device exhibits a broad spectral photoresponse from ultraviolet (UV) to infrared (IR) wavelengths (350–1050 nm). Under zero bias, the photodetector achieves a responsivity of 0.6 mA/W and a rapid response time of 5.8/6.1 ms (rise/fall) under 405 nm illumination, demonstrating effective self-driven photoresponse. With an applied reverse bias of −2 V, the device further reaches a responsivity of 161 mA/W and a detectivity of 8.6 × 1010Jones under 405 nm illumination. In addition, the device exhibits a low dark current of 5 pA and a high on/off ratio of 1180. These results demonstrate the potential of the MoSe2/SnS2vdW heterostructure for broadband and self-powered optoelectronic applications.

CAS / MDL: 872-50-4
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CRYSTAL RESEARCH AND TECHNOLOGY · 2026 ·Vol. 61 ·期 9 ·e70162 · IF 2.1

Solid-State Synthesis and Optoelectronic Properties of Large-Sized SnS2 Single Crystal

Rongtao Ji,Xiaofang Lai,Yongzhao Feng,Duan Zhao,Jikang Jian

Two-dimensional layered metal dichalcogenide SnS 2 has garnered significant attention due to its outstanding electronic and optoelectronic properties, while large-sized SnS 2 single crystals are essential for the successful preparation of such high-performance SnS 2 -based devices. Currently, chemical vapor transport (CVT) is the mainstream technique for growing SnS 2 single crystals, but it heavily relies on transport agents. Moreover, the residual of these agents may introduce additional point defects, which could degrade crystal purity and the optoelectronic properties of the resulting material. In this work, a simple solid-state method was adopted to grow high-quality SnS 2 single crystals without transport agents. X-ray diffraction (XRD) confirms that the crystal grows along the ( 0 0 1 001 $\hskip.001pt 001$ ) plane. The Raman spectrum of the SnS 2 single crystal exhibits a characteristic peak at 313 c ⁢ m − 1 c ⁢ m − 1 ${\mathrm{c}}{{\mathrm{m}}^{ - 1}}$ , indicating that the crystal has a 2H-SnS 2 configuration. The band gap of 2.12 e V eV ${\mathrm{eV}}$ was determined, and a single photoluminescence (PL) emission peak centred at 567 n m nm ${\mathrm{nm}}$ , with an average PL lifetime of 3.73 n s ns ${\mathrm{ns}}$ was observed. Photoelectric measurements verify that the SnS 2 single crystal possesses fast and stable response curves, with a response time (

CAS / MDL: 7440-31-5
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JOURNAL OF HAZARDOUS MATERIALS · 2025 · IF 11.3

Ultrasensitive ammonia sensor with excellent humidity resistance based on PANI/SnS2 heterojunction

Ahua Xu,Shupeng Sun,Xinlei Li,Nan Wang,Xiaoyu Wang,Huajin Tao,Yitian Ma,Zhao Zhang,Baoyu Huang,Xiaogan Li

The analysis of human exhaled gas is crucial for early and noninvasive diagnosis. However, the complex composition and high-humidity of exhaled gas pose significant challenges to the application of gas sensors. This research focuses on the development of a chemiresistive ammonia sensor based on the polyaniline/tin disulfide (PANI/SnS 2 ) heterojunction, which is fabricated by hydrothermal and in-situ polymerization techniques. The sensor demonstrates significantly enhanced gas sensing capabilities manifested by increased responsiveness, improved selectivity, and stability for detecting 0.5–100 ppm ammonia at ambient temperature. Notably, the sensor exhibits a marked enhancement in response at high humidity levels. When exposed to 30 ppm of ammonia, the sensor's response value increases by 167 % at a relative humidity (RH) of 80 %, compared to 128 % at 50 % RH. This significant improvement can be attributed to the unique interaction between water molecules and the sensor material, which enhances the overall charge transfer processes at the PANI/SnS 2 interface. Furthermore, in-situ techniques as well as theoretical calculations are utilized to gain insight into the sensitization mechanism. The proposed PANI/SnS 2 heterojunction sensor shows great promise for applications in high-humidity environment at ambient temperature.

CAS / MDL: 62-53-3 7727-54-0
研究领域: 材料科学 · 医学检测 · 化学传感器
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RSC Advances · 2016 ·Vol. 6 ·期 38 ·32414-32421 · IF 3.289

Fabrication of a reversible SnS2/RGO nanocomposite for high performance lithium storage

Shancheng Yan,Keyu Li,Zixia Lin,Haizeng Song,Tian Jiang,Jiansheng Wu,Yi Shi

SnS2/graphene (SnS2/G) composites have been explored extensively as a promising candidate for Lithium Ion Battery (LIB) anodes in recent years. Previously, the SnS2 conversion/reduction step of the reaction mechanism is generally believed to be irreversible or only partially reversible, which severely underestimates the theoretical capacity of SnS2. In this work, SnS2 nanoparticles have been successfully stacked on reduced graphene oxide (RGO) via a facile and effective solvothermal method using ethylene glycol as a chelant. The SnS2/graphene nanocomposite retained many of the original 2D characteristics of the graphene nanosheets. As a result, Li+ storage properties were significantly improved. The SnS2/RGO nanocomposites show a higher storage capacity of 939.0 mA h g−1 after 30 cycles at a current density of 0.1 A g−1, and a long-term cycle capacity of 615.5 mA h g−1 even after 200 cycles at 1 A g−1. The superior cycling stability of the SnS2/RGO electrode is attributed to greater reversibility in the initial conversion reaction, ascribed to the presence of the Sn nanoparticles.

CAS / MDL: 10026-06-9 62-56-6
研究领域: 材料科学 · 能源存储
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