FUEL
·
2022
·
IF 8.035
Yewen Zhang,Huiling Du,Jie Lu,Zhuo Li,Tong Lu,Yuxuan Hu,Yitian Ma
Ga 2 O 3 is widely used as anode material for lithium-ion batteries owing to its high theoretical capacity. However, Ga 2 O 3 has the disadvantages of limited electronic conductivity and severe volume expansion, which seriously restrict its application. Therefore, the Ga 2 O 3 nanospheres were coated with carbon using dopamine hydrochloride as the carbon source, which could self-polymerize along the surface of the Ga 2 O 3 particles, forming a uniform carbon coating layer, resulting in superior overall electrochemical performance. Moreover, this particular pomegranate-like morphology and carbon-coating treatment not only shorten the ion transmission path and improve the cycle stability but also provide abundant lithium-ion storage space inside the particle, which improves the pseudocapacitive storage characteristics. High capacitive contribution ratios were obtained for Ga 2 O 3 @PDA-C at different scan rates; these ratios were found to be much higher than those for Ga 2 O 3 electrode at different scan rates; the pseudocapacitance of Ga 2 O 3 @PDA-C increased to 69% and the more enormous capacitance contribution indicates its high capacity. Under the synergistic effect of multiple effects, the Ga 2 O 3 @PDA-C composite electrode exhibited excellent performance, with an initial capacity of 1863.9 mAh/g and maintained 1059.7 mAh/g after 100 cycles.
研究领域:
材料科学
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电化学
·
能源存储
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DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2024
·
IF 9.4
Shuyun Wang,Siyuan Wang,Rong Tang,Yin Liu,Huan Chen
Perfluorooctanoic acid (PFOA) and 2,4,6-trichlorophenol (2,4,6-TCP) are significant pollutants found in textile wastewater, posing severe threats to ecological environments. The construction of an adsorption-photocatalytic system enables the efficient removal of mixed pollutants by harnessing their synergistic effect, thereby overcoming the limitations of removing mixed pollutants with single water treatment technologies. Herein, fluorine-doped covalent triazine framework (F-CTF) was combined with Ga 2 O 3 -Bi 4 O 7 heterojunction to obtain Ga 2 O 3 -Bi 4 O 7 /F-CTF (GaBi/CTF). F-CTF greatly facilitates the adsorption process and provides convenience for photocatalysis. Simultaneously, the excellent conductivity of F-CTF promoted the separation of photoinduced charge carriers in Ga 2 O 3 -Bi 4 O 7 . GaBi/CTF5 (5 is the mass percentage of F-CTF) showed excellent degradation performance, and the removal rates of PFOA and 2,4,6-TCP reached 93.0 % and 100.0 % within 90 min, respectively. Mechanistic analysis revealed that 2,4,6-TCP and PFOA were attacked by distinct active species because of the disparate characteristics. The presence of phenolic hydroxyl groups makes 2,4,6-TCP more vulnerable to superoxide radicals (·O 2 – ) and hydroxyl radicals (·OH), whereas PFOA is oxidized by holes (h + ). The coexistence of mixed pollutants with diverse characteristics enables optimal utilization of active species generated within photocatalytic system. Moreover, the good stability of GaBi/CTF5 provides a feasible solution for efficient treatment of mixed pollutants in textile wastewater.
研究领域:
环境科学
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材料科学
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DOI
PubMed
高影响因子
PeerJ
·
2018
·
IF 2.118
Yu Lei,Chengkun Wang,Quan Jiang,Xiaoyi Sun,Yongzhong Du,Yaofeng Zhu,Yingmei Lu
The toxicity of engineered nanoparticles remains a concern. The knowledge of biohazards associated with particular nanoparticles is crucial to make this cutting-edge technology more beneficial and safe. Here, we evaluated the toxicity of Ga 2 O 3 nanoparticles (NPs), which are frequently used to enhance the performance of metal catalysts in a variety of catalytic reactions. The potential inflammatory signaling associated with the toxicity of HA/β-Ga 2 O 3 :Cr 3+ NPs in primary cortical neurons was examined. We observed a dose-dependent decrease in cell viability and an increase in apoptosis in neurons following various concentrations (0, 1, 5, 25, 50, 100 µg/ml) of HA/β-Ga 2 O 3 :Cr 3+ NPs treatment. Consistently, constitutively active forms of calcineurin (48 kDa) were significantly elevated in cultured primary cortical neurons, which was consistent with calpain activation indicated by the breakdown products of spectrin. Moreover, HA/β-Ga 2 O 3 :Cr 3+ NPs result in the elevation of LC3-II formation, SQSTM/p62, and Cathepsin B, whereas phosphorylation of CaMKII (Thr286) and Synapsin I (Ser603) were downregulated in the same context. Taken together, these results demonstrate for the first time that calpain activation and a disturbance of autophagy signaling are evoked by exposure to HA/β-Ga 2 O 3 :Cr 3+ NPs, which may contribute to neuronal injury in vitro .
研究领域:
纳米技术
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神经科学
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毒理学
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细胞生物学
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DOI
PubMed
高影响因子
Frontiers in Chemistry
·
2022
·
IF 5.545
Huang Meng,Huang Wenbin,Li Anqi,Yang Han,Jia Yijing,Yu Zhiqing,Xu Zhusong,Wang Xiaohan,Zhou Yasong,Wei Qiang
Experiments were carried out to research the different contents of Ga2O3 modification effects on the hydrodesulfurization (HDS) performance of 4,6-dimethyldibenzothiophene (4,6-DMDBT) catalyzed by the stepwise impregnation method. Characterization techniques such as XRD, BET, HRTEM, NH3-TPD, and Py-FTIR were performed to determine the effects of each modification of the catalyst by Ga on the properties of the prepared supports and catalysts. The catalytic effect of gallium is reflected in the fact that the empty d-orbitals of Ga elements participate in the formation of molecular orbitals in the active center and change their orbital properties, thus generating a direct desulfurization active phase suitable for complex sulfides for endpoint adsorption. The characterization results indicated that the introduction of Ga2O3 with appropriate content (2 wt.%) promoted Ni and Mo species to disperse uniformly and doping of more Ni atoms into the MoS2 crystals, which also increased the average stacking number and the length of MoS2. As a result, more NiMoS active phases were favored to form in the system. The specific surface area and the amounts of acid sites were increased, facilitating the adsorption of reactant molecules and the HDS reactions. The HDS results also suggested the effects of Ga modification play a very important role in the catalytic performance of the corresponding catalysts. The catalyst Ga–Ni–Mo/Al2O3 exhibited the highest conversion rate towards 4,6-DMDBT HDS when the amount of Ga2O3 loading was 2 wt.% with an LHSV of 2.5 h−1 at 290°C and Ga modification also can effectively improve the direct desulfurization (DDS) route selectivity in varying degrees.
研究领域:
催化化学
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材料科学
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DOI
PubMed
高影响因子
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION
·
2024
·Vol. 39
·期 4
·814-818
·
IF 1.3
Wang Peng,Zhang Binbin,Liu Xiaofei,Zhang Xin,Tu Rong,Zhang Song,Li Baowen
It remains a big challenge to synthesize two-dimensional (2D) GaN material for applications in power nanodevices. Traditional synthetic methods require complex equipment and processes and time consuming. Here, we reported a two-step route to prepare polycrystalline 2D GaN film. The amorphous ultrathin Ga 2 O 3 film was first exfoliated from the surface of liquid gallium. In a vapor phase reaction, 2D Ga 2 O 3 film was then converted into 2D GaN film while maintaining the 2D morphology. Raman and high-resolution transmission electron microscope (HRTEM) analysis implies the successful synthesis of wurtzite-type GaN ultrathin film. This simple strategy proposed in this work will provide more opportunities for applications of GaN ultrathin film in many devices.
研究领域:
材料科学
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纳米技术
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DOI
高影响因子
Journal of Materials Chemistry C
·
2024
·Vol. 12
·期 24
·8944-8951
·
IF 5.7
Xiaodan Wang,Jianping Xu,Shaobo Shi,Lina Kong,Xiangwei He,Jiahang He,Xiaosong Zhang,Lan Li
Traditional optical communication using single narrow-band photodetectors (PDs) has poor confidentiality because all information and data are exposed to free space. With the development of science and technology, even the optical communication in the solar-blind ultraviolet (UV) band carries the risk of eavesdropping. Dual-band PDs have potential applications in secure and reliable optical communication through a combination of optical encryption and algorithmic encryption. In this paper, self-powered Cu2O/Ga2O3 heterojunction PDs with solar-blind UV-visible photodetection were fabricated. By adjusting the pH value of the Cu2O electrolyte, the crystallization quality and grain orientation of the Cu2O thin film were improved, and the interface transfer resistance of the heterojunctions was decreased. The Cu2O/Ga2O3 PDs fabricated in Cu2O electrolyte with a pH value of 9.5 demonstrated the optimized solar-blind UV-visible photoresponse characteristics. In the absence of applied bias, the device exhibited a responsivity of 0.12 mA W−1, a rise time of 2.48 ms and a fall time of 11.72 ms at 254 nm. The responsivity reaches 19 mA W−1 when illuminated at 475 nm, and the rise and fall times are 0.96 and 9.12 ms, respectively. Utilizing the excellent photoresponse characteristics of the solar-blind UV-visible band, the device was used to design and demonstrate a proof-of-concept optical communication system for secure data transmission. The proposed system features two independent light channels, utilizing solar-blind UV light as the information carrier and visible light for key transmission. By implementing specific algorithms, this design ensures safe and reliable communication.
研究领域:
光电子学
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光子学
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半导体器件
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安全光通信
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材料科学
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Xiangwei He,Jianping Xu,Shaobo Shi,Lina Kong,Xiaosong Zhang,Lan Li
The technology for photodetection and localization of corona discharge typically necessitates the integration of various photodetectors (PDs) with different photoresponse bands and relies on external power supplies. A self-powered PD was fabricated utilizing the Sb2Se3/Ga2O3 heterojunction, exhibiting a broadband photoresponse from solar-blind ultraviolet (SBUV) to visible (Vis) and near-infrared (NIR) bands. The surface states of Ga2O3 nanorod array (NR) films were modulated by treatment with hydrogen peroxide (H2O2) solution for different periods of time to suppress the interface recombination of photogenerated carriers in type-I heterojunctions. The H2O2 treatment resulted in increased hydroxyl groups (−OH) and decreased oxygen vacancies in Ga2O3 NRs. The −OH can facilitate oxygen molecule (O2) adsorption in Ga2O3 NRs and form O2– to consume photogenerated holes to reduce the recombination of photogenerated carriers. However, the decrease of oxygen vacancies will cause a decline in the concentration of electrons in Ga2O3 NRs to hinder the carrier transport. Ultimately, the optimized Al/Sb2Se3/Ga2O3/FTO PD, subjected to H2O2 treatment for 4 min, demonstrated responsivities of 3.3, 130, and 180 mA/W under 254, 525, and 850 nm light illumination without applying a bias voltage, respectively. The utilization of oxygen adsorption and desorption processes to regulate the recombination of photogenerated carriers at the interface is an effective strategy for improving the performance of I-type heterojunction self-powered PDs. An approach was conceptually proposed for all-day real-time corona discharge monitoring in high-voltage transmission lines by utilizing the broadband photoresponse characteristic of PDs. The SBUV photoresponse was applied for the capture of SBUV light signals generated by corona discharge. The photoresponse in Vis and NIR light bands was employed to provide background information on corona discharge in both strong light conditions during daytime and weak light conditions during nighttime. The results provide a low power and miniaturized solution for the digitalization of the Power Internet of Things (IoT) and enable real-time monitoring of high-voltage transmission lines.
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PubMed
高影响因子
CATALYSIS LETTERS
·
2020
·Vol. 151
·期 7
·1894-1901
·
IF 2.482
Jiang Peng,Fu Haoyue,Ma Hongfang,Qian Weixin,Zhang Haitao,Ying Weiyong
Highly active Ga 2 O 3 nanoparticles catalysts were prepared by one-step oxidative decomposition of gallium nitrate with sucrose-derived carbon foams (SCF) template. The catalysts were investigated by XRD, Ar physisorption, SEM–EDS, HRTEM, TGA, NH 3 -TPD and 71 Ga MAS NMR. The addition of sucrose facilitated the higher surface area of Ga 2 O 3 nanoparticles and morphological transformation from bulk to flake due to the structure-directing role of the sucrose solution. Moreover, the weak-medium surface acid sites increased by adding sucrose properly, which was related to the larger number of tetrahedral Ga 3+ cations. The optimum catalytic activity was achieved over S X CF-Ga 2 O 3 catalysts at the sucrose/Ga 2 O 3 molar ratio of 6 with the propane conversion of 46.63% and propene selectivity of 88.18%. Graphic abstract
研究领域:
化学工程
·
催化材料科学
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DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2024
·
IF 6.3
Jiaming Guo,Jing Li,Shanhao Ze,Fei Li,Junchao Wang,Qing Liu,Zhe Hua,Liu Yang,Fei Liu,Baodan Liu
In this study, we introduce a novel perspective that the formation of the atomically ultrathin oxide layer on the surface of liquid alloys is primarily governed by thermodynamic laws and is additionally influenced by the surface tension of the liquid alloys. In this case, we control the competition of Gibbs free energy and surface tension to effectively address the severe segregation problem of Ga 2 O 3 and realize the precise doping of Ga 2 O 3 in the preparation process of two dimensional IGO film through the liquid InGa alloy printing approach. Importantly, the Ga 2 O 3 content in the IGO films can be tailored in the full range and a sub-5 nm ultrathin IGO film transistor is innovatively fabricated. The oxidation law, band gap, Fermi level, field-effect mobility, subthreshold swing, and other properties of IGO films in sub-5 nm scale are systemically investigated in detail. It has been demonstrated that the incorporation of Ga 2 O 3 in the doping process dramatically reduced the device's turn-off current and enhanced its ability to resist ultraviolet interference. This novel doping process opens up a significant opportunity for future developments of atomically ultrathin transparent conducting film.
研究领域:
材料科学
·
电子工程
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产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2022
·
IF 7.392
Lipeng Deng,Haizheng Hu,Yuchao Wang,Chao Wu,Huaile He,Jiaxin Li,Xiaobing Luo,Fabi Zhang,Daoyou Guo
Ga 2 O 3 is an ideal wide bandgap semiconductor for deep ultraviolet photodetectors due to the suitable band gap and excellent material stability, but the inevitable escape of oxygen ions from the lattices always leaves oxygen vacancies and leads to the persistent photoconductivity effect. Plasma treatment technology can use highly chemically active plasma to modify materials' surfaces at room temperature, which is environment-friendly and low carbon. In this work, we have prepared β -Ga 2 O 3 films by plasma-enhanced chemical vapor deposition (PECVD) and used plasma treatment to reduce the oxygen vacancies in-situ. Whereafter, we constructed a Schottky-type photodetector to explore the effect of plasma treatment on the photoelectronic properties of β -Ga 2 O 3 thin film. After plasma treatment, the oxygen vacancy reduces from 44.5 % to 27.3 %, and the photocurrent of β -Ga 2 O 3 photodetector increases from 11 nA to 67 nA at 0 V. Furthermore, the decrease of oxygen vacancy also improves the photoresponse speed (<0.2 s) of the photodetector. The present study provides an efficient treatment method of oxygen vacancies by plasma technology to obtain high-performance self-powered deep-ultraviolet photodetectors.
研究领域:
材料科学
·
光电技术
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DOI
高影响因子
Inorganic Chemistry Frontiers
·
2024
·Vol. 11
·期 13
·3941-3949
·
IF 6.1
Guocheng Pan,Yaowu Wang,Jianfeng Wang,Zhenping Wu,Yiheng Yue,Nan Lin,Shiqing Xu,Gongxun Bai
Near-infrared (NIR) phosphor-converted light emitting diodes (pc-LEDs) highly demand broadband NIR phosphors for applications in food safety and smart detection. However, the lack of tunable NIR luminescent materials limits their development. Herein, we constructed a series of NIR Cr3+ doped Ga2O3-based materials with broadband, tunable, efficient emissions by utilizing [Zn2+–Ge4+] and [Ga3+–Ga3+] co-unit substitution. The obtained results show that the emission peak of NIR phosphors can be modulated from 713 to 765 nm. Meanwhile, the excitation peak remains in the blue light region. NIR phosphor-converted devices were prepared with 450 nm LED chips, which were studied using NIR imaging, penetration imaging, anti-counterfeiting, and pupil recognition technologies. Interestingly, NIR mechanoluminescence (ML) was realized based on the developed phosphors, which were successfully applied for non-destructive measurements of solids and in vivo bioimaging. Our study proposes a series of tunable and broadband luminescent materials and devices for NIR applications.
研究领域:
材料科学
·
光学工程
·
生物医学工程
·
传感器技术
·
固体物理
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DOI
高影响因子
SENSORS AND ACTUATORS A-PHYSICAL
·
2026
·
IF 4.9
Chenglong Zhou,Yongsheng Tan,Anbiao Gui,Shunwei Zhu,Shunhang Wei,Zebo Fang,Qiufeng Ye
In this work, a self-powered pentacene/Ga 2 O 3 heterojunction solar-blind ultraviolet (UV) photodetector was fabricated on a flexible mica substrate using magnetron sputtering and thermal evaporation. The device exhibits excellent self-powered characteristics under 254 nm solar-blind UV illumination. Under 254 nm irradiation with an intensity of 200 W/cm 2 at 0 V bias, the device achieved a responsivity of 2.11 mA/W, a specific detectivity of Jones, and a photo-to-dark current ratio of 2800. The rise and fall times were 0.69 s and 1.39 s, respectively. Furthermore, mechanical bending tests were conducted on the flexible device. After 700 bending cycles at a 30 rc , no significant degradation was observed in the current–voltage characteristics or the responsivity at 0 V bias, demonstrating its outstanding mechanical robustness.
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高影响因子
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