Nanomaterials
·
2022
·Vol. 12
·期 9
·1575
·
IF 5.719
Fujin Li,Lin Bo,Ruipeng Zhang,Sida Liu,Junliang Zhu,Min Zuo,Degang Zhao
Thermoelectric materials can directly convert heat and electricity, which is a kind of promising energy material. In view of cost and mechanical properties, polycrystalline SnSe material with highzTvalue is greatly desired. In this study, polycrystalline Sn0.94Pb0.01Se1-xTexsamples were prepared by the vacuum melting–hot pressing sintering method. Sn vacancies, Pb and Te atoms were simultaneously introduced into the polycrystalline SnSe. The power factor of Sn0.94Pb0.01Se1-xTexsamples was decreased, which could be attributed to the generation ofn-type semiconductor SnSe2. In addition, the phonons were strongly scattered by point defects and dislocations, which led to the decrease of thermal conductivity—from 0.43 Wm−1K−1to 0.29 Wm−1K−1at 750 K. Finally, the polycrystalline Sn0.94Pb0.01Se0.96Te0.04sample achieved the maximumzTvalue of 0.60 at 750 K.Keywords:SnSe;nanoparticles;zT;thermoelectric;TEM
研究领域:
材料科学
·
能源工程
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DOI
PubMed
高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2025
·
IF 6.2
Zhuoming Xu,Mohammad Nisar,Junze Zhang,Fu Li,Shuo Chen,Guangxing Liang,Jingting Luo,Zhuanghao Zheng,Yue-Xing Chen
SnSe, known for its low thermal conductivity and eco-friendly nature, is a potential medium-temperature thermoelectric (TE) material. However, its low carrier concentration has hindered achieving a high ZT value in n-type SnSe. This study reports the successful preparation of n-type polycrystalline SnSe 0.95-x (CuI) x samples via mechanical alloying and spark plasma sintering, which significantly increased carrier concentration and introduced point defects, enhancing phonon scattering and reducing lattice thermal conductivity. Density functional theory (DFT) calculations reveals that CuI doping altered the bandgap and band degeneracy, enhancing the density-of-states effective mass and benefiting the Seebeck coefficient. The ZT value for the x = 0.03 sample reached a peak of 0.74 at 773 K, marking a significant improvement over the undoped sample. This study presents an effective approach to optimize TE properties through CuI doping, offering a stable and effective method to enhance the thermoelectric performance of n-type polycrystalline SnSe.
研究领域:
材料科学
·
物理学
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DOI
高影响因子
Coatings
·
2024
·Vol. 14
·期 4
·431
·
IF 2.9
Kaili Wang,Li Fan,Hongliang Zhu,Hao Liu,Yuxuan Wang,Shancheng Yan
In important applications, thermoelectric technology has been widely applied for precise temperature control in intelligent electronics. This work synthesized and characterized low-content copper-doped SnSe thermoelectric catalysts using an easy and effective hydrothermal method. It was discovered that doping increased the crystal plane spacing of SnSe, increased the carrier concentration, and improved the thermoelectric properties. The best degradation was attained at x = 0.0025. The thermoelectric degradation performance of low-dose copper-doped tin selenide Sn1−xCuxSe (x = 0, 0.0005, 0.001, 0.0015, 0.002, 0.0025, 0.003), for the degradation of methylene blue from organic wastewater at 75 °C, was examined. Our research indicates that by using this approach, we can create more high-performance catalysts.
研究领域:
材料科学
·
环境科学
·
催化化学
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DOI
高影响因子
Journal of Physical Chemistry C
·
2017
·
IF 4.536
Yajie Huang,Liangliang Li,Yuan-Hua Lin,Ce-Wen Nan
Two-dimensional (2D) materials have recently drawn tremendous attention because of their novel properties and potential applications in high-speed transistors, solar cells, and catalysts. Few-layer SnSe is a new member of the 2D family with excellent performance in optoelectronic and thermoelectric devices. It is necessary to synthesize few-layer SnSe nanosheets in large scale for various applications. In this work, we develop a scalable liquid-phase exfoliation method to synthesize high-quality crystalline SnSe nanosheets. The morphology and microstructure of SnSe nanosheets are systematically investigated with high-resolution transmission electron microscopy, atomic force microscopy, and Raman spectroscopy. The thinnest nanosheets are bilayered. The optical absorption properties of SnSe nanosheets from near-infrared to ultraviolet light are studied. It is worth noting that the band gap of the nanosheets monotonically increases with the reduction of the nanosheet thickness. The electronic structure of SnSe nanosheets with various thicknesses is calculated by first-principles calculations, the evolution of the band gap as a function of the nanosheet thickness is confirmed, and the mechanism of the band gap evolution is discussed. Our work paves the way for the scalable synthesis of 2D SnSe with tunable optical absorption and band gap, which has potential for use in photoelectronic and photocatalytic applications.
研究领域:
材料科学
·
纳米技术
·
光电子学
·
凝聚态物理
✓ 已验证
DOI
高影响因子
Crystals
·
2025
·Vol. 15
·期 7
·622
·
IF 2.4
Haoyu Zhao,Junliang Zhu,Zhonghe Zhu,Lin Bo,Wenying Wang,Xingshuo Liu,Changcun Li,Degang Zhao
Cubic phase SnSe-based materials have great potential in the field of thermoelectricity due to their reduced carrier scattering, increased band degeneracy, and ultra-low lattice thermal conductivity. Nevertheless, systematic studies on the influence of element doping on the thermoelectric properties of cubic SnSe-based materials are still relatively scarce. To enrich the research in this field, this work investigates the effects of Ge doping on the phase composition, electrical and thermal transport properties of cubic Sn0.50Ag0.25Bi0.25Se0.50Te0.50thermoelectric materials. X-ray diffraction (XRD) analysis confirmed that the Ge-doped samples exhibited a single cubic phase structure, while scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS) revealed a uniform distribution of elements within the samples. The results indicate that increasing the Ge doping content substantially enhances their electrical conductivity, albeit at the expense of elevated thermal conductivity. By optimizing the content of Ge-doping, the thermoelectric figure of merit (ZT) reached 0.74 at 750 K. Notably, while moderate Ge doping enhances electrical transport properties, excessive doping leads to a significant rise in thermal conductivity, ultimately constraining further thermoelectric performance gains.
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DOI
高影响因子
CRYSTAL GROWTH & DESIGN
·
2025
·
IF 3.4
Yue Liu,Huan-Yan Xu,Bo Li
Piezoelectric materials provide new avenues for driving the catalytic degradation of organic pollutants by harvesting mechanical energy, but high carrier recombination is a major obstacle to improving piezoelectric catalytic efficiency. Heterojunction construction is one of the effective strategies used to inhibit carrier recombination. Especially, the lateral heterostructure can solve the problem of the decline in piezoelectric performance caused by vertical heterojunctions in two-dimensional materials. Here, a pioneering SnSe2/SnSe lateral heterojunction was fabricated by epitaxially growing SnSe2 along the edge of a SnSe nanosheet through a combination strategy of HNO3 exfoliation and calcination. Compared with SnSe, the SnSe2/SnSe heterojunction displayed much higher piezocatalytic activity for the degradation of various antibiotics in water. Based on the radical trapping experiments and electron paramagnetic resonance characterizations, superoxide radicals were identified as the dominant reactive oxygen species. The piezoelectric properties and electronic band structures of SnSe and SnSe2/SnSe were analyzed by piezoresponse force microscopy combined with density functional theory calculations. The enhancement mechanism of piezocatalytic performance of the SnSe2/SnSe heterojunction was elucidated, and a II-scheme charge transfer mechanism at the SnSe2/SnSe interface driven by a built-in electric field was put forward. This work will enrich the development of piezoelectric catalysis technology and provide new ideas for the design of heterostructured piezocatalysts.
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高影响因子
MODERN PHYSICS LETTERS B
·
2023
·
IF 1.9
Ruizhi Yang,Yunkai Li,Wanpeng Lin,Jun Xu,Lige Wang,Jing Liu
Selenium selenide (SnSe) has attracted widespread attention because of its environmental friendliness and ultra-low lattice thermal conductivity. Single-crystal SnSe has been discovered to exhibit a high ZT value, but its mechanical qualities are weak and its manufacturing process is complicated, rendering it unsuitable for commercial usage. Polycrystalline SnSe is facile to synthesis; however, due to its weakened electrical performance, it has a poor thermoelectric property. In this study, polycrystalline SnSe samples are prepared using hydrothermal synthesis combined with vacuum sintering, and their thermoelectric properties are modulated using alkali metal element doping.
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DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2021
·Vol. 32
·期 24
·28192-28203
·
IF 2.478
Qin Yi,Li Xiaohan,Zhao Ting,Zhu Jianfeng,Yang Yanling,Xie Meiqian
Thermoelectric materials convert thermal energy into electricity directly. Constructing nanostructured composite architectures can be an effective strategy to develop thermoelectric performance. SnSe/Ti 3 C 2 composite materials were synthesized through the electrostatic self-assembly method followed by spark plasma sintering. The interfaces introduced by Ti 3 C 2 can scatter carriers effectively, thus increasing the Seebeck coefficients ( S ), finally, a high absolute S value of ~ 296.2 µV K −1 was obtained at 773 K. At the same time, the high-density interfaces of SnSe/Ti 3 C 2 composites enhance the phonon scattering, a low lattice thermal conductivity k lat of 0.54 W m −1 K −1 was obtained. Benefit from the elevated Seebeck coefficient and decreased thermal conductivity, a ZT of 0.1 was obtained at 773 K along the pressing direction, compared with the pure SnSe, the thermoelectric performance improved by 68%. This research will provide a new way for the development of the thermoelectric properties of polycrystalline SnSe.
研究领域:
材料科学
·
热电学
·
纳米复合材料
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DOI
高影响因子
Advanced Optical Materials
·
2019
·Vol. 7
·期 5
·1800579
·
IF 7.125
Yuting Ye,Yuehui Xian,Jiawen Cai,Kaicheng Lu,Zhengzheng Liu,Tongchao Shi,Juan Du,Yuxin Leng,Rongfei Wei,Weiqi Wang,Xiaofeng Liu,Gang Bi,Jianrong Qiu
Monochalcogenides of group IV elements have been considered as phosphorene analogs due to their similar crystal and electronic structure. Here, few-layer SnSe nanosheets are synthesized by a sonication-assisted liquid phase exfoliation process and their linear and nonlinear optical properties are examined. The as-exfoliated few-layer (FL) SnSe demonstrates layer thickness from 2 to 10 nm and lateral size of 150 nm with high crystallinity. Optical measurement confirms the layer-number dependent bandgap, which is also corroborated by first-principle calculation. In addition, the FL SnSe shows a transition from saturable absorption to reverse saturable absorption with the increase of pumping power, and the nonlinear absorption is characterized by an ultrafast response time of picosecond scale. The nonlinear optical response in FL SnSe could be explained by defect-involved recombination of photogenerated carriers as well as the Auger scattering process, which is further enhanced by structural two-dimensionality.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
高影响因子
Frontiers in Chemistry
·
2022
·
IF 5.545
Sun Bingxia,Meng Yun,Song Tianlin,Shi Jieyun,He Xinhong,Zhao Peiran
Endogenic heat shock proteins and uneven local heat distribution are two main problems in traditional tumor hyperthermia therapy strategies. Aiming at solving these problems, we designed Au–SnSe–PVP nanomaterials (ASNPs) by modifying Au nanoparticles (Au-NPs) and biocompatible PVP on SnSe nanorods via a new reactive oxygen species production strategy. The ASNPs with excellent photothermal conversion performance can produce thermoelectric effects in response to temperature differences during photothermal conversion. The modification of Au-NPs can attract free electron (e–) to accumulate and promote the separation of e– and holes (h+) in the thermoelectric process, thereby further promoting e–-rich Au-NPs-induced H2O2 homolysis and h+–H2O half-reaction to generate hydroxyl radicals, realizing the synergistic application of photothermal therapy and pyroelectric dynamic therapy in tumor treatment.
研究领域:
生物医学工程
·
肿瘤学
·
纳米医学
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产品关联
DOI
PubMed
高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2022
·
IF 6.364
Adeel Abbas,Zhuoming Xu,Mohammad Nisar,Delong Li,Fu Li,Zhuanghao Zheng,Guangxing Liang,Ping Fan,Yue-Xing Chen
SnSe is a very strong anisotropic material; sometimes, strong anisotropy is unenviable for producing parts of thermoelectric (TE) devices. In order to study the efficient preparation of high-performance n-type polycrystalline SnSe with weak anisotropy, in this work, we combine mechanical alloying at 450 RPM for 10 h and spark plasma sintering at 773 K under 50 MPa pressure for the preparation of polycrystalline SnSe 0.95- x I x ( x = 0,0.01,0.02,0.03) samples, and investigate the TE properties. The prepared samples show very weak anisotropy. With iodine doping, increased carrier concentration is observed, in agreement with DFT calculations. A peak ZT ≈ 1.02 at 723 K is observed with I-doping of x = 0.02, which is about 225% higher than that of undoped sample with ZT ≈ 0.31 at 723 K in parallel direction, mainly attributed to the enhanced power factor and about 56% reduced thermal conductivity from 0.68 Wm −1 K −1 to 0.30 Wm −1 K −1 . TE properties in both directions are not much different, and the ratios of electrical and thermal conductivities in both directions are very close to unity.
研究领域:
材料科学
·
能源材料
·
凝聚态物理
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
·
IF 6.7
Qi Pei,Zhi-hua Yuan,Bing-qian Zhang,Bao-yi Chen,Yang Wang,Shuai-nan Wang,Rong-nan Guo,Dong Wang
Defects strongly influence the mechanical, optical, and particularly the electrical properties of two-dimensional (2D) materials and they may be engineered to enhance their performance. Herein, 2D S-doped SnSe (SnSe 1 − x S x , x = 0, 0.25, 0.5, 0.75) is obtained via chemical vapor deposition (CVD) and used to fabricate Ag/SnSe 1− x S x /Pt memristors. The density of doping-induced defects increases and then decreases with the increasing S content ( x ), strongly impacting the electrical properties of SnSe 1− x S x . The memristor switching mechanism changes from anion (vacancy) transport at x = 0 to primarily cation migration at x = 0.25, anion and cation migration at x = 0.5, and mainly anion (vacancy) migration at x = 0.75. Optimal S doping ( x = 0.25) enhances the ability of SnSe to retain its advantageous electrical properties at high temperatures, and the corresponding memristor exhibits stable operation within the temperature range of 150 - 175 °C.
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DOI
高影响因子
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