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SnSe
ACS Applied Bio Materials · 2026 · IF 5.6

Second-Near-Infrared Light-Induced SnSe Nanosheets for Augmented Photonic Tumor Hyperthermia

Xiuying Chen,Haoqin Zheng,Lile Dong,Peng Zhang

Triple-negative breast cancer (TNBC) poses a serious threat to the lives and health of patients, as traditional treatments are limited by psychological burden, systemic toxicity, or drug resistance. Photonic hyperthermia triggered by the second near-infrared (NIR-II) window is a promising minimally invasive strategy. Herein, we synthesized SnSe nanosheets via a simple, scalable method for NIR-II-triggered photonic tumor hyperthermia. SnSe nanosheets exhibited irregular lamellar structures with uniform Sn/Se distribution, favorable biocompatibility, and prominent photothermal performance under NIR-II irradiation. Under NIR-II irradiation, the SnSe+NIR-II group significantly suppressed tumor growth. This work offers a platform based on NIR-II light-induced photonic tumor hyperthermia, providing a minimally invasive strategy for TNBC treatment.

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JOURNAL OF ALLOYS AND COMPOUNDS · 2022 · IF 6.371

Improvement of anisotropic thermoelectric performance in polycrystalline SnSe by metallic AgSnSe2 compositing

Haojie Huo,Yuting Zhang,Kai Guo,Xinxin Yang,Juanjuan Xing,Shuankui Li,Jiye Zhang,Jun Luo

SnSe is an emerging star material in thermoelectric community owing to its attractive electronic band structure and ultralow intrinsic lattice thermal conductivity . By now, aliovalent doping is often employed to be a route strategy to optimize the thermoelectric properties of SnSe via improving its poor electrical conductivity . In this work, AgSnSe 2 , as a metallic composite , is introduced with the aim to increase the hole concentration of SnSe via metal-semiconductor contact. It is demonstrated that compositing of AgSnSe 2 can effectively increase the hole concentration of polycrystalline SnSe hosts by two orders of magnitude (from 10 17 to 10 19 cm −3 ) without deteriorating the carrier mobilities . Therefore, a lager power factor of 5.72 μW cm −1 K −2 is achieved at 773 K for the SnSe + 0.020AgSnSe 2 sample perpendicular to the hot-pressing direction. Combined with the intrinsic low thermal conductivity , the maximum zT value of the sample can be boosted to 0.68 at 773 K, which is increased by 124% compared to that of the uncomposited counterpart. This work proves that composite engineering should be an efficient alternative strategy in optimizing the thermoelectric performance of polycrystalline SnSe and can be synergistically used with other sophisticated approaches.

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JOURNAL OF ALLOYS AND COMPOUNDS · 2023 · IF 6.2

Enhanced thermoelectric and mechanical properties of polycrystalline cubic SnSe by AgBiTe2 alloying

Junliang Zhu,Lin Bo,Jianbiao Kong,Yangbo Hou,Linghao Zhao,Changcun Li,Degang Zhao

Recently, the cubic SnSe with multiple valleys and low thermal conductivity has become the focus of current research and receives extensive attention worldwide. However, the cubic SnSe is difficult to exist stably at normal temperature and pressure. In this work, the cubic rock-salt SnSe samples were successfully stabilized at room temperature by AgBiTe 2 alloying. Microstructure and thermoelectric properties of the Sn 1–2 x (AgBi) x Se 1–2 x Te 2 x ( x  = 0, 0.10, 0.15, 0.20, 0.25, 0.30) were studied systematically. With the increase of AgBiTe 2 addition, the crystal structure of SnSe gradually transformed from orthorhombic to cubic phase. Due to the doping of heterogeneous atoms and the phase structural transformation, the carrier concentration and carrier mobility of Sn 1–2 x (AgBi) x Se 1–2 x Te 2 x were optimized, thus the electrical properties were significantly enhanced. An obviously enhanced zT max of 0.70 at 750 K and a zT ave of 0.29 (300–750 K) were achieved in Sn 0.50 (AgBi) 0.25 Se 0.50 Te 0.50 . In addition, the mechanical properties of Sn 1–2 x (AgBi) x Se 1–2 x Te 2 x were also strengthened. A higher Vickers hardness of ∼1.8 GPa was obtained in Sn 0.40 (AgBi) 0.30 Se 0.40 Te 0.60 .

研究领域: 材料科学 · 热电学 · 固体物理 · 无机化学 · 机械工程
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Nature Communications · 2025 ·Vol. 16 ·期 1 ·3305 · IF 15.7

Matrix plainification leads to high thermoelectric performance in plastic Cu2Se/SnSe composites

Ying Pan,Jian Qingyang,Gong Yaru,Song Tong,Yang Yuxuan,Geng Yang,Huang Junquan,Sun Rongxin,Chen Chen,Shen Tao,Li Yanan,Dou Wei,Liang Congmin,Liu Yuqi,Xiang Deshang,Feng Tao,Fei Xiaoyu,Zhang Yongsheng,Song Kun,Zhang Yang,Wu Haijun,Tang Guodong

Thermoelectric technology exhibits significant potential for power generation and electronic cooling. In this study, we report the achievement of exceptional thermoelectric performance and high plasticity in stable Cu 2 Se/SnSe composites. A novel matrix plainification strategy was employed to eliminate lattice vacancies within the Cu 2 Se matrix of the Cu 2 Se/SnSe composites, resulting in a marked improvement in carrier mobility and power factor. The presence of quasi-coherent interfaces induces phonon scattering, reducing lattice thermal conductivity without compromising carrier mobility. Consequently, a high figure of merit ( ZT ) of 3.3 was attained in the Cu 2 Se/5 wt.% Sn 0.96 Pb 0.01 Zn 0.03 Se composite. Additionally, the presence of high-density nanotwins imparts remarkable plasticity to the composite, yielding a compressive strain of 12%. The secondary phase contributes to the stability of the composite by hindering the extensive migration of Cu ions through bonding interactions. Our findings present a novel strategy for enhancing the thermoelectric performance of composite semiconductors, with potential applicability to other thermoelectric systems.

研究领域: 材料科学 · 热电学 · 复合材料 · 固体物理
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2025 ·Vol. 36 ·期 24 ·1-13 · IF 2.8

ZnO particle size engineering in SnSe composites: synergistic optimization of thermoelectric performance

Yang Xinjuan,Li Yunkai,Li Xiaolong,Wang Lige,Liu Jing

Tin selenide (SnSe), a prominent narrow-bandgap p-type semiconductor in the IV-VI group, has garnered significant research interest due to its exceptionally low thermal conductivity and remarkable thermoelectric performance. This study systematically investigates the synergistic effects of zinc oxide (ZnO) particle size variation (30 nm, 200 nm, and 45 μm) and composite ratios on the thermoelectric transport properties of SnSe matrix composites fabricated through hydrothermal synthesis at 140°C with a 14 h reaction time. Experimental results demonstrate that the incorporation of 45 μm ZnO particles at an optimal 2% mass ratio substantially enhances the thermoelectric performance of ZnO/SnSe composites, achieving a peak thermoelectric figure of merit ( ZT ) value of approximately 1.5 ± 0.1 at 773 K, with an average ZT of 0.9 across 373–773 K. This significant improvement highlights the critical role of secondary phase particle size optimization in developing high-efficiency thermoelectric materials.

研究领域: 材料科学 · 热电学 · 纳米材料 · 半导体复合材料
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Small · 2024 ·Vol. 20 ·期 28 ·2311153 · IF 13

CdSe Quantum Dots Enable High Thermoelectric Performance in Solution-Processed Polycrystalline SnSe

Wei Dou,Yaru Gong,Xinqi Huang,Yanan Li,Qingtang Zhang,Yuqi Liu,QinXuan Xia,Qingyang Jian,Deshang Xiang,Di Li,Dewei Zhang,Shihua Zhang,Pan Ying,Guodong Tang

Here, a high peak ZT of ≈2.0 is reported in solution-processed polycrystalline Ge and Cd codoped SnSe. Microstructural characterization reveals that CdSe quantum dots are successfully introduced by solution process method. Ultraviolet photoelectron spectroscopy evinces that CdSe quantum dots enhance the density of states in the electronic structure of SnSe, which leads to a large Seebeck coefficient. It is found that Ge and Cd codoping simultaneously optimizes carrier concentration and improves electrical conductivity. The enhanced Seebeck coefficient and optimization of carrier concentration lead to marked increase in power factor. CdSe quantum dots combined with strong lattice strain give rise to strong phonon scattering, leading to an ultralow lattice thermal conductivity. Consequently, high thermoelectric performance is realized in solution-processed polycrystalline SnSe by designing quantum dot structures and introducing lattice strain. This work provides a new route for designing prospective thermoelectric materials by microstructural manipulation in solution chemistry.

研究领域: 材料科学 · 热电学 · 纳米材料 · 溶液化学 · 固体物理
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ACS Omega · 2026 · IF 5.2

SnSe/PVDF-HFP Composite Fibrous Membrane with Excellent Piezoelectric and Photocatalytic Dual Properties

Xu Li,Meng-Nan Liu,Tong Zhang,Gang Zheng,Ru Li,Jun Zhang,Qing-Ru Shao,Wen-Peng Han,Yun-Ze Long

Currently, electrospun nanofiber membranes are widely used in sensor and photocatalysis research fields. In this study, polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP) flexible nanofiber membranes were successfully prepared by electrospinning technology. The narrow band gap semiconductor tin selenide (SnSe) was innovatively introduced as a functional filler, and a SnSe/PVDF-HFP composite fibrous membrane with excellent piezoelectric and photocatalytic dual properties was developed. By systematically optimizing the load process parameters of SnSe, including loading methods, hydrothermal duration for crystal size control, and ultrasonic time for loading amount regulation, the piezoelectric properties of the material were significantly improved. Experimental results demonstrate that the composite fibrous membrane exhibits outstanding dual functionality: On one hand, the flexible sensor based on its piezoelectric properties achieves an output voltage of 23.1 V and a sensitivity of 440 mV–1, enabling precise monitoring of human motion. On the other hand, the piezo-photocatalytic synergistic enhancement mechanism is proposed based on kinetic studies. Under the combined action of light irradiation and ultrasonic vibration, the composite fibrous membrane as a catalyst achieves 99.0% degradation rate of methylene blue within 120 min while maintaining excellent stability and recyclability, effectively addressing the recovery challenges of traditional powder catalysts. This work not only provides a novel material design strategy for integrating piezoelectric sensing and photocatalytic dual functions but also opens innovative pathways for developing wearable flexible electronic devices and easily recoverable catalysts.

CAS / MDL: 10025-69-1
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ACS Applied Materials & Interfaces · 2018 · IF 8.097

Lateral Heterostructures Formed by Thermally Converting n-Type SnSe2 to p-Type SnSe

Zhen Tian,Mingxing Zhao,Xiongxiong Xue,Wei Xia,Chenglei Guo,Yanfeng Guo,Yexin Feng,Jiamin Xue

Different two-dimensional (2D) materials, when combined together to form heterostructures, can exhibit exciting properties that do not exist in individual components. Therefore, intensive research efforts have been devoted to their fabrication and characterization. Previously, vertical and in-plane 2D heterostructures have been formed by mechanical stacking and chemical vapor deposition. Here, we report a new material system that can form in-plane p–n junctions by thermal conversion of n-type SnSe2 to p-type SnSe. Through scanning tunneling microscopy and density functional theory studies, we find that these two distinctively different lattices can form atomically sharp interfaces and have a type II to nearly type III band alignment. We also demonstrate that this method can be used to create micron-sized in-plane p–n junctions at predefined locations. These findings pave the way for further exploration of the intriguing properties of the SnSe2–SnSe heterostructure.

研究领域: 材料科学 · 纳米技术 · 凝聚态物理 · 半导体器件
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ACS Applied Materials & Interfaces · 2024 · IF 8.3

Achieving High Isotropic Figure of Merit in Cd and in Codoped Polycrystalline SnSe

Xinqi Huang,Yaru Gong,Yuqi Liu,Wei Dou,Song Li,Qinxuan Xia,Deshang Xiang,Di Li,Pan Ying,Guodong Tang

Here, we combined Cd and In codoping with a simple hydrothermal synthesis method to prepare SnSe powders composed of nanorod-like flowers. After spark plasma sintering, its internal grains inherited well the morphological features of the precursor, and the multiscale microstructure included nanorod-shaped grains, high-density dislocations, and stacking faults, as well as abundant nanoprecipitates, resulting in an ultralow thermal conductivity of 0.15 W m–1 K–1 for the synthesized material. At the same time, Cd and In synergistically regulated the electrical conductivity and Seebeck coefficient of SnSe, leading to an enhanced power factor. Among them, Sn0.94Cd0.03In0.03Se achieved a peak ZT of 1.50 parallel to the pressing direction, representing an 87.5% improvement compared with pure SnSe. Notably, the material possesses isotropic ZT values parallel and perpendicular to the pressing direction, overcoming the characteristic anisotropy in thermal performance observed in previous polycrystalline SnSe-based materials. Our results provide a new strategy for optimizing the performance of thermoelectric materials through structural engineering.

研究领域: 材料科学 · 热电学 · 纳米材料 · 固体物理
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Journal of Materials Chemistry C · 2026 · IF 5.1

Resonant level and band splitting boost the thermoelectric performance of p-type polycrystalline SnSe

Chunlu Wu,Xiao-Lei Shi,Meng Li,Wei-Di Liu,Daohao Li,Liangkui Zhu,Pei Yuan,Zhuanghao Zheng,Lina Cheng,Zhi-Gang Chen,Xiangdong Yao

Due to its abundant raw-material resources, high intrinsic Seebeck coefficient, and low intrinsic thermal conductivity, SnSe has emerged as a standout among numerous thermoelectric materials. However, achieving thermoelectric performance in polycrystalline SnSe that approaches the high-performance single-crystal materials remains a challenge. Here, we design high-performance p-type polycrystalline SnSe co-doped with Ge and Ga by validating through first-principles calculations. Ge-doping causes band splitting and reduced bandgap of SnSe, while Ga-doping introduces resonant levels, thereby synergistically enhancing its originally low intrinsic carrier concentration to improve electrical conductivity. Additionally, co-doping introduces intensive point defects and other lattice defects, which strengthen phonon scattering and effectively reduce thermal conductivity. As a result, the ZT value of polycrystalline Sn0.955Ge0.005Ga0.04Se reached 1 at 773 K. The findings highlight the significant importance of rational band engineering in achieving excellent thermoelectric performance and advancing the progress of thermoelectric technology.

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Energy & Environmental Materials · 2026 · IF 13.8

Strain and Band Modulation of WO3/SnSe Micro-Nano Composites Achieving Superior Photocatalytic Performance

Qinyuan Huang,Xiaoyan Ma,Xing Yang,Chongyu Wang,Quan Shan,Chunjian Wang,Fei Wang,Jing Feng,Zhenhua Ge,Lidong Zhao

SnSe, known for its narrow bandgap and visible light absorption capability, serves as a photocatalyst for environmental remediation. This work employs strain and band modulation to enhance photocatalytic performance through WO 3 /SnSe micro-nano composite construction. Strain energy density (SED) calculations using the Williamson-Hall method reveal substantial lattice strain in the 2.5% WO 3 /SnSe composite, reaching 83.6 J cm −3 . Combined experimental characterization and density functional theory (DFT) calculations demonstrate that strain modulation improves methyl orange (MO) adsorption energy, extends visible light absorption, and facilitates electron transfer and charge carrier separation. The optimized 2.5% WO 3 /SnSe composite achieves 99.71% MO degradation within 60 min, representing an 11.7-fold enhancement in reaction kinetics compared to pristine SnSe. The heterostructure induces favorable band alignment that promotes the formation of · O 2 − $$ {}^{\cdotp }{\mathrm{O}}_2^{-} $$ and · OH active species. These findings establish strain and band modulation as viable strategies for developing high-performance photocatalysts.

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JOURNAL OF SOLID STATE CHEMISTRY · 2022 · IF 3.656

Effects of different LaCl3 doping processes on the thermoelectric properties of SnSe bulk materials

Wen-jie Li,Wen-Hao Gu,Jun Guo,Yi-Xin Zhang,Jing Feng,Quan Shan,Zhen-Hua Ge

Both single crystal and polycrystalline SnSe have been widely investigated due to their superior thermoelectric properties in the medium temperature range. Due to its poor mechanical properties and complex and time-consuming synthesis process, single crystal SnSe is difficult to apply commercially. In this work, n-type polycrystalline SnSe with high thermoelectric properties was fabricated by LaCl 3 doping via the melting method combined with the spark plasma sintering (SPS) technique. Surprisingly, it was found that the different doping processes affect the electrical behavior of LaCl 3 -doped polycrystalline SnSe. The sample of LaCl 3 -doped SnSe was p-type when ball milling and the SPS technique were employed in our previous work, and the sample was n-type when the melting method and SPS were employed in this work. The doping mechanism was investigated in detail in this work.

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