Matter
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2023
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IF 18.9
Hao Suo,Yu Wang,Xin Zhang,Weilin Zheng,Yang Guo,Leipeng Li,Panlai Li,Yanmin Yang,Zhijun Wang,Feng Wang
The rapid development of near-infrared (NIR) spectroscopic techniques has greatly promoted the discovery of novel luminescent materials as broadband NIR light sources. However, conventional phosphors are typically powered by electricity, which may aggravate the ever-increased energy demands of humanity. Herein, we report a new class of Ga 2 O 3 :Cr 3+ nanophosphors that can continuously emit broadband NIR light under mechanical action through self-recoverable mechanoluminescence (ML). We show that the ML intensity and profile can be deliberately tuned by local crystal-site engineering through rare-earth and indium substituting. By controlling the dopant concentration of In 3+ along with Yb 3+ co-doping, highly tunable light emission over a broad range of 650–1,100 nm is realized with a record large full width at half maximum (FWHM) of 267 nm. Our findings enrich the library of NIR light sources with the feature of sustainable photon production, which raises new possibilities for advanced sensing and spectroscopy studies.
研究领域:
材料科学
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光物理学
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DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2025
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IF 6.3
Qi You,Jun Zhu,Luomeng Chao,Hai Zhang,Sihua Ha
Controlling the crystallization of gallium oxide (Ga 2 O 3 ) crystal as well as intrinsic defects (oxygen vacancies) are crucial steps in obtaining high-quality material and elucidating how defects affect semiconductor properties . Gallium oxide hydroxide (GaOOH) was firstly synthesized via the reaction of gallium nitrate (Ga(NO 3 ) 3 ) with different alkalis (Urea, NH 3 ·H 2 O, Na 2 CO 3 and NaOH) using the precipitation technique. Then, Ga 2 O 3 powder was obtained by adding carbon powder as reducing agent at the calcination stage. The β-Ga 2 O 3 powder prepared by NH 3 ·H 2 O were found to have the best crystallization as analyzed by X-ray diffractometer (XRD) and scanning electron microscopy (SEM). Meanwhile, the photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) results combined with the first-principles calculation indicate that the Ga 2 O 3 powder made by NH 3 ·H 2 O also has the least intrinsic oxygen vacancies .
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高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
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IF 6.7
Liru Zeng,Zeyulin Zhang,Dinghe Liu,Zhuangjie Xu,Dazheng Chen,Yue Peng,Qian Feng,Yachao Zhang,Jincheng Zhang,Chunfu Zhang,Yue Hao
The interfacial configuration in oxide heteroepitaxy plays a critical role in determining the structural integrity and reliable performance of wide-bandgap heterostructures. Herein, we investigate the orientation-dependent epitaxial growth of high-quality NiO films on β-Ga 2 O 3 via mist chemical vapor deposition (Mist-CVD), exhibiting distinct epitaxial domain configurations depending on the substrate orientation. Combined experimental and density functional theory (DFT) analyses reveal that the synergistic interplay among surface energy, lattice mismatch, and crystal symmetry governs the epitaxial mode and crystalline quality across different substrate orientations. Benefiting from the high-quality epitaxy, the NiO films demonstrate good environmental stability, retaining 94% of their initial current after 30 days of ambient exposure. As a functional demonstration, the NiO/(001) β-Ga 2 O 3 p-n diode exhibits a low leakage current density (2.08 ×10 −8 A·cm −2 @-100 V) and a high breakdown voltage of 885 V, highlighting the critical role of epitaxial interface quality. This study provides mechanistic insight into orientation-regulated oxide heteroepitaxy and offers a viable materials strategy for constructing stable wide-bandgap oxide heterostructures.
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高影响因子
APPLIED SURFACE SCIENCE
·
2025
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IF 6.9
Shiqi Li,Liang Fu,Zhenping Qu,Mengyuan Qin,Lingling Zhou
Zn-based catalysts are attractive candidates for electrocatalytic CO 2 reduction to syngas, yet their unstable structure and narrow syngas ratio limit the application. In this work, the Ga 2 O 3 /ZnO (GZO) catalyst with stable dual active sites was prepared for tunable CO/H 2 ratio (0.21 ∼ 3.07) production over a wide potential range (−0.79 ∼ −1.29 V vs. RHE). The Ga 2 O 3 decoration could tailor the electronic structure of ZnO and boost the generation of oxygen vacancies (O V ) in the catalyst, thus enhancing the adsorption of CO 2 and the transportation of electrons, further improving CO selectivity at low potentials. Meanwhile, at high potential, Ga 2 O 3 would dominate the promotion of hydrogen evolution reaction (HER). As a result, the GZO catalyst led to the tunable syngas, and the syngas ratio varied upon changing the applied potentials and Ga 2 O 3 content. This work provided new possibilities for the development of advanced catalytic systems for various syngas industrial applications.
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高影响因子
ACS Applied Materials & Interfaces
·
2025
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IF 8.2
Yufei Song,Fuai Hu,Peng Zhao,Yang Li,Feifei Guo,Ziyi Liu,Zeliang Gao
Accurately probing the interiors of curved objects with direct X-ray detection remains a formidable challenge. Here, a novel Ga2O3–TeO2 glass (GTOG) with the advantages of shape-controllable, large-area preparation, and a simple preparation process has been developed. Owing to its high electrical resistivity and carrier mobility-lifetime product, a flat-panel GTOG detector exhibits an ultralow detection limit of 8.579 nGyair s–1 and a high sensitivity of 321.47 μC Gy–1 cm–2 under 40 keV X-ray radiation. Furthermore, under 120 keV X-ray radiation, the sensitivity of the GTOG X-ray detector is enhanced to 484.98 μC Gy–1 cm–2 at 175 °C, which has potential applications in high-temperature environments. Leveraging its shape-controllability, we fabricated a curved X-ray detector using a low-temperature melting process. The curved array detector demonstrates significantly clearer and less distorted images in curved object detection compared to those of the flat-panel detector. This achievement suggests that a glass with adjustable bending radii can serve as a paradigm for future shapeable X-ray detectors, unlocking new possibilities for three-dimensional (3D) curved X-ray imaging.
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PubMed
高影响因子
JOURNAL OF LUMINESCENCE
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2018
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IF 2.732
Qiang Shi,Qingru Wang,Dong Zhang,Qinglin Wang,Shuhong Li,Wenjun Wang,Quli Fan,Junying Zhang
In this study, Gallium oxide (Ga 2 O 3 ) thin films were deposited by vacuum thermal evaporation technique. The effects of annealing temperature on the structural, optical and photoluminescence (PL) properties of Ga 2 O 3 thin films were investigated in detail. The Ga 2 O 3 thin films annealed at lower temperatures were amorphous , while those annealed at above 800 °C were nanocrystalline . The annealing temperature increasing from 400 to 1100 °C results in the band-gap increase from 4.70 to 5.13 eV due to the reduction in density of defect states. Under the excitation at 250 nm, the PL spectra of thin films consisted of a UV emission (300 nm) and two blue emissions (400 nm and 438 nm). The UV and blue luminescence intensities increased as the annealing temperature was increased from 400 to 1100 °C. The blue luminescence is suggested to originate from the recombination of trapped electrons in the donor with trapped holes in the acceptor, where the origin of the donor should be an double ionized oxygen vacancy ( V O ++ ) and the acceptor should be a gallium vacancy ( V Ga ) or gallium-oxygen vacancy pair ( V Ga - V O ++ ).
研究领域:
材料科学
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光学
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高影响因子
Surfaces and Interfaces
·
2025
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IF 6.3
Yusong Zhang,Haoyan Chen,Rihui Yao,Guoping Su,Han He,Jiahao Zheng,Huacheng Tang,Yichun Lu,Honglong Ning,Junbiao Peng
As an ultrawide-bandgap semiconductor, Ga 2 O 3 is highly promising for solar-blind ultraviolet detection. Traditional preparation methods are often complicated and costly. In this study, α-Ga 2 O 3 nanorods were synthesized via a hydrothermal method and employed to construct a photoelectrochemical ultraviolet PD (PEC UV PD). We investigated the influence of hydrothermal parameters on the Ga 2 O 3 thin films. It was observed that extending the hydrothermal reaction time led to an increase in film thickness, whereas elevating the precursor concentration resulted in a reduction in nanorod dimensions. Notably, the introduction of ammonia induced preferential orientation of the nanorods. On the basis of these findings, a Ga 2 O 3 -based PEC PD with a preferential (104) crystal-plane orientation was successfully fabricated, demonstrating excellent solar-blind detection performance. Under 267 nm deep ultraviolet light, it achieved a maximum responsivity (R) of 27.8 mA W⁻¹ and detectivity (D*) of 2.80 × 10¹⁰ Jones, with a solar-blind to near-ultraviolet rejection ratio (R 267nm /R 365nm ) of 11,949. The rise time (τᵣᵢₛₑ) was 36.2 ms, and the delay time (τ delay ) was 20.1 ms. By combining experiments with density functional theory (DFT) calculations, the study indicates the (104) surface facilitates H₂O adsorption, enhancing the oxidation reaction at the PEC PD photoanode-electrolyte interface. This work offers a new approach for developing cost-effective, high-performance solar-blind ultraviolet detectors.
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高影响因子
CERAMICS INTERNATIONAL
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2026
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IF 6
Ying Li,He Li,Guangjun Yang,Xiwei Qi
A series of La 2 O 3 -Ga 2 O 3 -0.08Eu 2 O 3 - x Dy 2 O 3 amorphous samples ( x = 0–0.14, interval of 0.01) were synthesized via containerless solidification. XRD results demonstrated that the prepared materials possessed an amorphous structure with a broad diffraction hump instead of sharp crystalline peaks. Differential thermal analysis (DTA) revealed that Dy 2 O 3 doping barely altered the glass transition temperature ( T g ) but significantly increased thermal stability and crystallization characteristic temperature ( T x ) and thermal stability parameter Δ T ( T x - T g ), with the maximum Δ T reaching ∼96 °C at x = 0.09. Concentration quenching of Dy 3+ was dominated by multipolar interaction, confirmed by a critical distance ( R c ) of 18.98 Å and Dexter theory analysis. The optical band gap ( E opt ) remained ∼3.72 eV at x ≤ 0.06 and decreased to ∼3.42 eV at x = 0.11. CIE standard 1931 chromaticity coordinate values together with correlated color temperature (CCT) were tunable, with emission color evolving from warm reddish-orange to orange-yellow (CCT: 2250–3240 K). The excellent thermal stability, tunable PL, and tunable CCT render these amorphous materials promising candidates for solid-state luminescent devices.
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高影响因子
JOURNAL OF LUMINESCENCE
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2025
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IF 3.6
Duo Chen,Ruiyuan Bi,Lifeng Xun,Xiaopeng Zhao
Building upon an anion doping strategy, this study proposes using F - regulation to enhance the luminescence performance of Ga 2 O 3 :Eu 3+ phosphors. To address the contradiction between the low Eu 3+ characteristic absorption and the strong Ga 2 O 3 intrinsic emission induced by charge transfer band (CTB) excitation in traditional Ga 2 O 3 :Eu 3+ systems, this study successfully prepared a series of Ga 2 O 3 :Eu 3+ /F - phosphors with different F - doping concentrations using an oleic acid-assisted solvothermal method combined with high-temperature sintering. The phases, morphology, structure, and luminescent properties of the samples were systematically analyzed. Experimental results show that F - successfully replaces part of the O 2- in the phosphor and alters the local symmetry of Eu 3+ , which results in 5 D 0 → 7 F 1 becoming the main transition path for the characteristic luminescence of Eu 3+ , shifting the main emission peak from 615 nm to 587 nm. Under CTB excitation, F - doping significantly enhanced the Eu 3+ characteristic emission without significantly altering the Ga 2 O 3 matrix emission. Under optimal reaction conditions, the luminescence intensity of the magnetic dipole transition in Ga 2 O 3 :Eu 3+ /F - phosphor was enhanced approximately 26-fold, with the quantum yield reaching 9.26% and the 5 D 0 excited state lifetime increasing to 1.83 ms. This modulation of the emission behavior also caused the phosphor chromaticity to shift from blue-purple to orange. This study demonstrates the selective enhancement mechanism of F - doping in Ga 2 O 3 :Eu 3+ luminescence, providing a reference for the design of high-performance rare-earth luminescent materials.
研究领域:
材料科学
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发光材料
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稀土掺杂
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固态化学
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DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
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2025
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IF 3.9
Chen Boyang,Liu Xinyu,Liu Yiyuan,Gao Zeliang,Zhang Kun,Mu Wenxiang
Semiconductor X-ray detectors have attracted considerable attention recently owing to their high sensitivity and excellent stability. Among them, semi-insulating β-Ga 2 O 3 stands out due to its superior thermal stability, high breakdown electric field, and high crystal quality, enabling the fabrication of high-performance detectors suitable for various working environments. In this study, Ni 2+ was introduced into β-Ga 2 O 3 as a deep-level acceptor via doping engineering. A high-resistivity Ni-doped β-Ga 2 O 3 crystal was grown using the edge-defined film-fed growth (EFG) method. X-ray fluorescence spectrometer (XRF) confirmed a Ni doping concentration of 0.544 at%. The crystal exhibited a rocking curve with a full width at half maximum (FWHM) of 65.13 arcsec and clear, symmetric Laue patterns. The ultraviolet–visible (UV–Vis) transmission spectrum showed a cutoff edge at 265.5 nm, yielding a bandgap of 4.67 eV. Moreover, the semi-insulating behavior of Ni: β-Ga 2 O 3 was indicated by the infrared absorption edge extended beyond 10 μm. Raman spectroscopy revealed lattice distortion due to Ni 2+ incorporation, causing shifts in peak positions and intensities without phase change. A metal–semiconductor–metal (MSM)-structured X-ray detector based on Ni: β-Ga 2 O 3 was fabricated and characterized under various biases and dose rates. The device exhibited excellent stability at 1000 V with a high sensitivity of 663.36 μC/Gy·cm 2 , outperforming detectors from other semi-insulating β-Ga 2 O 3 crystals due to its superior crystal quality and high breakdown strength. Furthermore, low oxygen vacancy concentration contributed to fast response times of 0.20 s (rise) and 0.23 s (fall). The detection limit was estimated to be 12.04 nGy/s, highlighting its potential for low-dose X-ray detection.
研究领域:
半导体材料
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光电子器件
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辐射探测
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晶体生长
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固体物理
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高影响因子
ACS Catalysis
·
2025
·
IF 13.1
Minglei Lu,Yushen Liu,Fan Yang,Yuxin Ge,Xudong Shi,Yongqi Mao,Xinyuan Song,Zejian Li,Jiajin Li,Yuxiang Lyu,Guimei Liu,Zhuoyu Zheng,Yuan Yuan,Junwei Liao,Xitang Qian,Minhua Shao,Tiejun Wang
Ensuring safer and more satisfactory hydrogen (H2) production from aqueous-phase reforming of methanol (APRM) is crucial for automotive, marine, and aerospace applications. However, nonprecious metal catalysts face challenges in realizing efficient methanol (CH3OH) dehydrogenation and effective carbon monoxide (CO) suppression for APRM without a strong base. In this work, we synthesized Ga2O3-modified Cu–ZnO catalysts with carbon encapsulation, leading to a uniform Cu dispersion. The optimized 12 wt % GCZ-2.0-C450 catalyst exhibits good performance over a wide temperature range (130–210 °C). It achieves a high H2 production rate of 101.2 μmol/gcat/s and low CO selectivity (0.07%) at 210 °C with long-term stability, surpassing the reported Cu- and Pt-based catalysts in APRM. Density functional theory calculations indicate that the Ga2O3 introduction significantly reduces the Gibbs energy of the rate-determining step of *CH3O + *H → *CH2O + *H2, dropping from 1.25 to 0.60 eV. Meanwhile, the adsorption energy of the generated *H2 decreases from −2.92 to −0.13 eV, which facilitates the release of gaseous H2.
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高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2022
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IF 6.371
Tianxin Kang,Dongmei Yang,Fenqi Du,Peng Hu,Feng Teng,Haibo Fan
Gallium Oxide (Ga 2 O 3 ) exhibits great potential in photocatalysis due to its strong redox capability. Nevertheless, working in the deep ultraviolet region and having a high recombination rate limit its application. Using magnesium powder as the reducing agent, colored Ga 2 O 3 with different oxygen vacancy concentrations was prepared by a high temperature solid state reduction method. It is found that the band gap of Ga 2 O 3 is related to the concentration of oxygen vacancy , which can be controlled by reducing agents. Under 30 min of simulated solar light irradiation, black Ga 2 O 3 displays 86.2% degradation efficiency over Rhodamine B dye, which is about two times more than that for the white Ga 2 O 3 . Furthermore, after irradiation by the visible light for 120 min, the photocatalytic degradation efficiency of RhB dye for black Ga 2 O 3 increases to approximately 40.6% (26.3% for white Ga 2 O 3 ). Enhanced separation efficiency of the photogenerated carriers and local absorption of visible light are the main reasons for improved photocatalytic degradation efficiency. A novel method for studying Ga 2 O 3 and semiconductor oxides is established by the preparation of colored Ga 2 O 3 .
研究领域:
材料科学
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光催化化学
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半导体物理
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无机功能材料
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环境催化
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DOI
高影响因子
危险品化学品经营许可证（带存储）