Materials Today Energy
·
2025
·
IF 8.6
Fucheng Yu,Zehao Wu,Cheng Qian,Zengguang Huang,Yueyi liu,Jinghong Zhang,Sihua Zhong
Antimony sulfide (Sb 2 S 3 ) has emerged as a promising top cell candidate for tandem solar architectures due to its suitable bandgap, environmentally friendly and earth-abundant composition. However, sulfur volatilization during the preparation process always affects the quality of the thin film and the photovoltaic performance. To address this challenge, we developed a simple in-situ passivation approach applied during Sb 2 S 3 hydrothermal deposition via the strategic supplementation of sulfur source in precursor solutions. This methodology effectively boosts minority charge carrier life time during preparation processing, concurrently enhancing crystalline quality and improving power conversion efficiency (PCE) of the device. Besides reducing the defect of Sb 2 S 3 absorber, we further systematic optimized the electron transport layer (ETL) architecture by using TiO 2 /CdS bilayer to accelerate the charge transfer rate at the interface of Sb 2 S 3 and ETL and to reduce parasitic light absorption. As an overall result, a PCE of 6.83% with a high open-circuit voltage ( V oc ) of 811.5 mV has been achieved, which is the highest V oc for Sb 2 S 3 solar cells to date. This study provides a promising sulfur passivation strategy for the Sb 2 S 3 solar cells by hydrothermal method.
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DOI
高影响因子
RARE METALS
·
2024
·Vol. 43
·期 5
·2067-2079
·
IF 9.6
Wang Dan,Ma Qun,He Huan,Wang Zhi-Yuan,Zheng Run-Guo,Sun Hong-Yu,Liu Yan-Guo,Liu Chun-Li
Antimony-based materials with high capacities and moderate potentials are promising anodes for lithium-/sodium-ion batteries. However, their tremendous volume expansion and inferior conductivity lead to poor structural stability and sluggish reaction kinetics. Herein, a double-confined nanoheterostructure Sb/Sb 2 S 3 @Ti 3 C 2 T x @C has been fabricated through a solvothermal method followed by low-temperature heat treatment. The dual protection of “MXene” and “carbon” can better accommodate the volume expansion of Sb/Sb 2 S 3 . The strong covalent bond (Ti–S, Ti–O–Sb, C–O–Sb) can firmly integrate Sb-based material with Ti 3 C 2 T x and carbon, which significantly improves the structure stability. In addition, the carbon layer can restrain the oxidation of MXenes, and the nano-Sb/Sb 2 S 3 can facilitate electron/ion transport and suppress the restacking of MXenes. The heterogeneous interface between Sb and Sb 2 S 3 can further promote interfacial charge transfer. The MXene-Sb/Sb 2 S 3 @C-1 with the optimal Sb content shows high specific capacities, comparable rate properties and ultra-stable cycling performances (250 mAh·g −1 after 2500 cycles at 1 A·g −1 for sodium-ion batteries). Ex situ X-ray diffractometer (XRD) test reveals the storage mechanism including the conversion and alloying process of MXene-Sb/Sb 2 S 3 @C-1. Cyclic voltammetry (CV) test results demonstrate that the pseudocapacitance behavior is dominant in MXene-Sb/Sb 2 S 3 @C-1, especially at large current. This design paves the way for exploring high-performance alloy-based/conversion-type anode for energy storage devices. Graphical abstract
研究领域:
材料科学
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储能
·
纳米技术
·
电化学
·
电池技术
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DOI
高影响因子
International Journal of Applied Glass Science
·
2015
·Vol. 7
·期 3
·337-344
·
IF 2.611
Guang Yang,Fang Xia,Xiaoyan He,Jianfeng Wen,Guorong Chen
Effects of Pb on thermal stability and crystallization kinetics of chalcogenide glasses (1− x )(0.85GeS 2 −0.15Sb 2 S 3 )− x PbS ( x = 0–0.4) have been carried out by a detailed calorimetric study and structural analysis. The glass stability was assessed based on three criteria, while the activation energies of crystallization were calculated under nonisothermal crystallization conditions by the Kissinger method, the Augis/Bennett method, the Mahadevan method, and the modified Ozawa method, respectively. Both stability criteria and activation energies of crystallization suggest that the glasses possess excellent thermal stability. The thermal stability decreases with addition of PbS but is insensitive to the content of PbS in the range from x = 0.1 to 0.4. Raman, XRD, and molar volume structural characterization suggested that the excellent thermal stability of these glasses is due to the glass former role of PbS. The calculated Avrami exponent pointing to a 3-dimensional crystallization mechanism which explains the reason for the previously reported successful preparation of infrared transmitting chalcogenide glass-ceramics.
研究领域:
材料科学
·
玻璃物理
·
热分析
·
固态化学
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DOI
高影响因子
Solar RRL
·
2023
·Vol. 7
·期 19
·2300482
·
IF 7.9
Hui Deng,Zekun Chen,Weihao Xie,Muhammad Ishaq,Kefei Wu,Xinxin Feng,Yubin Kang,Weihuang Wang,Shuying Cheng
Antimony sulfide (Sb 2 S 3 ) solar cells have attracted extensive attention in silicon-based tandem solar cells. The performance of Sb 2 S 3 devices fabricated by the vacuum method is limited by sulfur vacancies ( V S ) and surface oxide defects during high-temperature processes. Herein, amorphous Sb 2 S 3 film based on low-temperature rapid thermal evaporation (RTE) technique is fabricated to overcome S loss. Moreover, a sulfur-atmosphere recrystallization strategy is further developed to obtain high-quality absorbers from the amorphous film. The element content of Sb 2 S 3 film is completely in accord with the stoichiometric ratio (2:3), and the surface oxides are effectively suppressed, enhancing V OC and fill factor. Compared to the control directly crystallized film, the defect concentrations of the S-recrystallized Sb 2 S 3 film are reduced by 61%, exhibiting better uniformity and higher PN junction quality. Ultimately, the full-inorganic Sb 2 S 3 solar cells (FTO/TiO 2 /Sb 2 S 3 /Au) achieve an efficiency of 6.25%. The S-atmosphere recrystallization process can effectively passivate bulk defects ( V S and Sb 2 O 3 ) and suppress recombination to improve device performance, which will provide new prospects for vacuum method-based Sb 2 S 3 thin film solar cells.
研究领域:
材料科学
·
能源科学
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DOI
高影响因子
ACS Applied Energy Materials
·
2024
·
IF 5.4
Yanqing Wang,Zhaozhao Wang,Min Fan,Mengzhu Li,Liangliang Xie,Haifei Zhu,Yu Wang,Wangchao Chen,Fuling Guo,Chengwu Shi
Antimony sulfide (Sb2S3) stands out as an exemplary material for the light-absorbing layer in solar cells, attributed to its favorable light absorption properties, eco-friendliness, and robust stability. However, undesirable [hk0] crystal orientation and the presence of pinholes will degrade film quality and device performance. Here, an in situ polymerization-assisted grain growth strategy was introduced by adding monomer acrylic acid (AA) to the growth solution during the chemical bath deposition (CBD) process of Sb2S3. At the initial stage, AA serves as a complexing agent, coordinating with Sb3+ ions to mitigate particle agglomeration in the solution, which not only enhances the film quality but also ensures a more desirable [hk1] crystal orientation. During the reaction, in situ synthesized poly(acrylic acid) (PAA) builds coordination bonds with Sb3+ through the carboxyl groups, inducing the cross-linking of Sb2S3 grains. This cross-linking yields compressive constraints and reduces the number of pinholes in the Sb2S3 films, culminating in improved film quality and reinforced device steadiness. Consequently, the best power conversion efficiency (PCE) of the AA-modified Sb2S3 solar cell reached 7.12% (compared to 6.70% for the control), Furthermore, incorporating an additional SnO2 electron transport layer and a BTR-TPA interfacial layer bolstered the efficiency to 7.51%.
研究领域:
材料科学
·
能源科学
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Jiawei Zhu,Lisu Yu,Zhenghai Wang,Xingjian Wang,Yingdong Ou,Mengqiang Cai,Zhixu Wu,Rongxin Tang,Yong Xia,Yuhao Wang,Hui Deng
Photodetectors (PDs) are critical parts of visible light communication (VLC) systems for achieving efficient photoelectronic conversion and high-fidelity transmission of signals. Antimony sulfide (Sb2S3) as a nontoxic, high optical absorption coefficient, and low-cost semiconductor becomes a promising candidate for applications in VLC systems. Particularly, Sb2S3 PDs were verified to have significantly weak light detection ability in the visible region. However, the response speed of Sb2S3 PDs with existing device structures is still relatively slow. Herein, through optimizing the device structure for the p–i–n type PDs, a p-type Sb2Se3 hole transport layer (HTL) is designed to enhance the built-in electric field and to accelerate the migration of photogenerated carriers for the high responsivity and fast response speed. The optimal thickness of the structure is obtained through the simulation of SCAPS-1D software, and the optimized devices show high-performance parameters, including a responsivity of 0.34 A W–1, a specific detectivity (D*) of 2.20 × 1012 Jones, the −3 dB bandwidth of 440 kHz, high stability, and the value of the Sb2S3 PDs can reach 60% in the range of 360–600 nm, which indicates that the device is very suitable for working in the visible light band. In addition, the resulting Sb2S3 PD is successfully integrated into VLC systems by designing a matched light detection circuit. The results suggest that the Sb2S3 PDs are expected to provide an alternative to future VLC system applications.
研究领域:
光电子学
·
光子学
·
半导体器件
·
可见光通信
·
薄膜光电探测器
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DOI
高影响因子
ACS Nano
·
2020
·
IF 14.588
Liang Cao,Xuanwen Gao,Bao Zhang,Xing Ou,Jiafeng Zhang,Wen-Bin Luo
Constructing a heterojunction and introducing an interfacial interaction by designing ideal structures have the inherent advantages of optimizing electronic structures and macroscopic mechanical properties. An exquisite hierarchical heterogeneous structure of bimetal sulfide Sb2S3@FeS2 hollow nanorods embedded into a nitrogen-doped carbon matrix is fabricated by a concise two-step solvothermal method. The FeS2 interlayer expands in situ grow on the interface of hollow Sb2S3 nanorods within the nitrogen-doped graphene matrix, forming a delicate heterostructure. Such a well-designed architecture affords rapid Na+ diffusion and improves charge transfer at the heterointerfaces. Meanwhile, the strongly synergistic coupling interaction among the interior Sb2S3, interlayer FeS2, and external nitrogen-doped carbon matrix creates a stable nanostructure, which extremely accelerates the electronic/ion transport and effectively alleviates the volume expansion upon long cyclic performance. As a result, the composite, as an anode material for sodium-ion batteries, exhibits a superior rate capability of 537.9 mAh g–1 at 10 A g–1 and excellent cyclic stability with 85.7% capacity retention after 1000 cycles at 5 A g–1. Based on the DFT calculation, the existing constructing heterojunction in this composite can not only optimize the electronic structure to enhance the conductivity but also favor the Na2S adsorption energy to accelerate the reaction kinetics. The outstanding electrochemical performance sheds light on the strategy by the rational design of hierarchical heterogeneous nanostructures for energy storage applications.
研究领域:
材料科学
·
储能
·
电化学
·
纳米材料
·
电池技术
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DOI
高影响因子
Science China-Materials
·
2021
·Vol. 64
·期 7
·1733-1741
·
IF 8.273
Qiao Jing,Zhang Xue,Liu Chang,Wang Zhou,Liu Wei,Wang Fenglong,Liu Jiurong
The application of antimony sulfide (Sb 2 S 3 ) has been limited mainly to the energy storage and photoelectric conversion fields. However, in this work, the application of Sb 2 S 3 is extended to the field of electromagnetic (EM) wave absorption for the first time. High-permittivity Sb 2 S 3 single-crystal nanorods were prepared successfully and exhibited excellent performance, with a low reflection loss of −65.9 dB (13.0 GHz, 3.8 mm) and an ultra-wide effective absorption bandwidth of 9.5 GHz (8.5–18.0 GHz, 4.1 mm). After excluding the general absorption mechanisms, including conductive losses, interfacial polarization, and dipole polarization, the distinctive single-crystal volume polarization affected by shape anisotropy was proposed. This work not only meets the challenge of a single-component dielectric material design but also introduces a new concept for construction of efficient dielectric EM wave absorption material.
研究领域:
材料科学
·
电磁波吸收
·
纳米材料
·
介电性能
·
应用物理
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DOI
高影响因子
Materials Today Energy
·
2017
·
IF 0
Hui Deng,Shengjie Yuan,Xiaokun Yang,Fensha Cai,Chao Hu,Keke Qiao,Jian Zhang,Jiang Tang,Haisheng Song,Zhubing He
Inorganic Sb 2 S 3 thin film solar cells show wide application prospects in low cost, non-toxicity and high stability solar cells comparing with well-developed CIGS , CdTe and organohalide perovskite materials. The present work successfully fabricated Sb 2 S 3 film utilizing rapid thermal evaporation (RTE) method. By optimizing the crystal growth technique, smooth and non-pinhole Sb 2 S 3 film was deposited on compact TiO 2 substrate. The corresponding planar TiO 2 /Sb 2 S 3 solar cells without hole transport material (HTM) assistance achieved an efficiency of 2.5%. To eliminate S-shape J-V curves and improve the fill factor, the as-deposited Sb 2 S 3 film was further annealed in selenium atmosphere. The efficiency and fill factor of Se-atmosphere annealed Sb 2 S 3 devices were improved to 3.2% and 55%, respectively. The device improvement mechanism of Se-annealing process were systematically illustrated by cryogenic measurements, impedance analysis and capacitance-voltage characterizations. The post-annealing could help to improve junction quality, passivate absorber defects and decrease back contact barrier. The Se-atmosphere annealed Sb 2 S 3 devices could stand continuous one sun illumination for 400 h and the efficiency was almost the same. After storing in air for six months, the average efficiencies still hold more than 90% of initial value . The present developed environment-friendly stable devices and efficient treatment technique were expected to enrich the research of thin film solar cell.
研究领域:
材料科学
·
光伏技术
·
无机半导体
·
薄膜太阳能电池
·
器件物理
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DOI
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
·
2016
·Vol. 18
·期 24
·16436-16443
·
IF 4.449
Hongwei Lei,Guang Yang,Yaxiong Guo,Liangbin Xiong,Pingli Qin,Xin Dai,Xiaolu Zheng,Weijun Ke,Hong Tao,Zhao Chen,Borui Li,Guojia Fang
Efficient planar antimony sulfide (Sb2S3) heterojunction solar cells have been made using chemical bath deposited (CBD) Sb2S3 as the absorber, low-temperature solution-processed tin oxide (SnO2) as the electron conductor and poly (3-hexylthiophene) (P3HT) as the hole conductor. A solar conversion efficiency of 2.8% was obtained at 1 sun illumination using a planar device consisting of F-doped SnO2 substrate/SnO2/CBD-Sb2S3/P3HT/Au, whereas the solar cells based on a titanium dioxide (TiO2) electron conductor exhibited a power conversion efficiency of 1.9%. Compared with conventional Sb2S3 sensitized solar cells, the high-temperature processed mesoscopic TiO2 scaffold is no longer needed. More importantly, a low-temperature solution-processed SnO2 layer was introduced for electron transportation to substitute the high-temperature sintered dense blocking TiO2 layer. Our planar solar cells not only have simple geometry with fewer steps to fabricate but also show enhanced performance. The higher efficiency of planar Sb2S3 solar cell devices based on a SnO2 electron conductor is attributed to their high transparency, uniform surface, efficient electron transport properties of SnO2, suitable energy band alignment, and reduced recombination at the interface of SnO2/Sb2S3.
研究领域:
材料科学
·
能源技术
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产品关联
DOI
PubMed
高影响因子
Advanced Science
·
2023
·Vol. 10
·期 30
·2303414
·
IF 15.1
Hu Li,Guo-Qin Yang,Xiao-Yang Hu,Yi-Hua Hu,Rui-Bo Zeng,Jin-Rui Cai,Li-Quan Yao,Li-Mei Lin,Li-Ping Cai,Guilin Chen
Sb 2 S 3 is rapidly developed as light absorber material for solar cells due to its excellent photoelectric properties. However, the use of the organic hole transport layer of Spiro-OMeTAD and gold (Au) in Sb 2 S 3 solar cells imposes serious problems in stability and cost. In this work, low-cost molybdenum (Mo) prepared by magnetron sputtering is demonstrated to serve as a back electrode in superstrate structured Sb 2 S 3 solar cells for the first time. And a multifunctional layer of Se is inserted between Sb 2 S 3 /Mo interface by evaporation, which plays vital roles as: i) soft loading of high-energy Mo particles with the help of cottonlike-Se layer; ii) formation of surficial Sb 2 Se 3 on Sb 2 S 3 layer, and then reducing hole transportation barrier. To further alleviate the roll-over effect, a pre-selenide Mo target and consequentially form a MoSe 2 is skillfully sputtered, which is expected to manipulate the band alignment and render an enhanced holes extraction. Impressively, the device with an optimized Mo electrode achieves an efficiency of 5.1%, which is one of the highest values among non-noble metal electrode based Sb 2 S 3 solar cells. This work sheds light on the potential development of low-cost metal electrodes for superstrate Sb 2 S 3 devices by carefully designing the back contact interface.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
·
IF 6.7
Yu Cao,Caisong Ren,Yuchen Liu,Jinkai Song,Hanwen Guo,Jiatong Li,Ziyang Hu,Zhenwang Luo,Jinbo Pang,Jing Zhou
The integration of light sensing and information storage into a single device offers a promising pathway toward compact, energy-efficient visual intelligence systems. In this work, a novel antimony sulfide (Sb 2 S 3 )/cadmium sulfide (CdS) heterojunction-based dual-functional device that enables the synergistic integration of photoelectric detection (PD) and resistive switching (RS) within a unified architecture is reported. The results indicate that an optimized Sb 2 S 3 thin film thickness of 800 nm achieves a well-balanced performance between PD and RS functionalities. In the self-powered PD mode (0 V bias), the device exhibits optimal performance under 617 nm illumination, delivering a high responsivity of 3.8 × 10 3 mA/W, a specific detectivity of 1.2 × 10 14 Jones, and a fast response time on the microsecond scale. In RS mode, the device demonstrates a high on/off ratio, low operating voltages (∼0.75 V/−0.85 V), and excellent endurance and stability over repeated switching cycles. Furthermore, the device successfully emulates synaptic behaviors such as long-term potentiation/depression and demonstrates potential for neuromorphic computing, including digit recognition and reservoir computing. These results highlight the significant potential of Sb 2 S 3 photoelectric materials for multi-functional integrated devices, and provide valuable insights for developing next-generation high-performance intelligent sensing systems.
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DOI
高影响因子
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