JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
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2025
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IF 6.2
Xiong Xiao,Linpeng Zheng,Qian Li,Chunhua Chen,Duanwei He,Xiuyan Wei,Zuguang Hu,Jianyun Yang,Guodong (David) Zhan
Chemical vapour deposition (CVD) rates are limited, making the preparation of thick diamonds challenging. We propose an efficient high pressure high temperature (HPHT) welding method for polycrystalline CVD diamond films. Multiple layers of CVD polycrystalline diamond films are welded into a monolithic structure under 15 GPa and 2100 °C. HPHT treated samples have an extremely high bond strength and the hardness of the weld layer exceeds 120 GPa. Microstructural analyses suggest the mechanism of HPHT welding: laser treatment transforms the carbon atoms on the CVD diamond film surface from SP3 to SP2 hybridization, forming a non-diamond-carbon/diamond coherent interface. Under HPHT conditions, the carbon atoms are again transformed from SP2 to SP3 hybridization, forming a strong interlayer bond through diffusion at the coherent interface. This method provides a new approach for rapidly preparing diamond bulk materials.
研究领域:
材料科学
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化学工程
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产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Xinli Ma,Jinxi Zhang,Yang Sun,Chen Wu,Guangyu Geng,Jing Zhang,Enxiu Wu,Linyan Xu,Sen Wu,Xiaodong Hu,Jing Liu
Defect engineering is a promising means to create patterns on two-dimensional (2D) materials to enable unconventional properties. However, defects usually exist abundantly and randomly on 2D materials, which makes it difficult to tune the properties in a controllable manner. Therefore, it is highly desirable to find out the formation mechanism and controllable fabrication method of defects on 2D materials. In this report, we systematically investigated the line defects on monolayer MoS2 formed by introducing oxygen during the CVD growth. The line defects were formed due to the overoxidation of the MoS2 flake along crystal boundaries, which bulged out of the surface and had the same surface potential as the basal plane. Therefore, the MoS2 flake with line defects maintained the optical and electrical integrity but exhibited distinct properties as compared to the pristine one. By controlling the oxygen concentration during CVD growth, the density of the line defects can be precisely controlled to implement controllable property tuning. Moreover, during the transfer process, the MoS2 flake was easily broken along the line defects, which increased the active sites to achieve enhanced hydrogen evolution reaction performance. This work is expected to inspire the development of patterned functional 2D materials by defect engineering.
研究领域:
材料科学
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纳米技术
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DOI
PubMed
高影响因子
Materials
·
2019
·Vol. 12
·期 3
·390
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IF 2.972
Zhiying Hu,Dingheng Zheng,Rong Tu,Meijun Yang,Qizhong Li,Mingxu Han,Song Zhang,Lianmeng Zhang,Takashi Goto
Highly-oriented polycrystal 3C-SiC bulks were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors. The effects of deposition temperature (Tdep) and total pressure (Ptot) on the orientation and surficial morphology were investigated. The results showed that the growth orientation of 3C-SiC columnar grains was strongly influenced byTdep. With increasingTdep, the columnar grains transformed from <111>- to <110>-oriented. The arrangement of <111>-oriented columnar grains was controlled byPtot. Lotus-, turtle-, thorn-, and strawberry-like surface morphologies were naturally contributed by different arrangements of <111>-oriented grains, and the deposition mechanism was discussed. The wetting behaviors of CVD-SiC samples by molten aluminum were also examined at 1173 K in a high vacuum atmosphere.Keywords:3C-SiC;chemical vapor deposition (CVD);orientation;surficial morphology;wettability
研究领域:
材料科学
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化学工程
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产品关联
DOI
PubMed
高影响因子
CERAMICS INTERNATIONAL
·
2024
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IF 5.1
Wei Ding,Pengjian Lu,Qingfang Xu,Chitengfei Zhang,Rong Tu,Song Zhang
In the integrated circuit industry, heat is transferred through the contact between wafers and the chemical vapor deposited (CVD) 3C–SiC wafer susceptor . Understanding the out-plane thermal conductivity of CVD 3C–SiC is crucial in this context. The influence of grain size and grain boundary characteristics on out-plane thermal conductivity for <111>-oriented CVD 3C–SiC was discussed in this study. The out-plane thermal conductivity sharply decreases from 146.4 W/m⸱K to 122.3 W/m⸱K when the grain size approaches 11.04 μm. This paper suggests that the significant accumulation of dislocations at high-angle grain boundaries is the primary cause of this phenomenon. The substantial lattice strain impedes phonon transfer between grain boundaries, reducing overall phonon mobility. These findings suggest that manipulating the grain boundary angle is an effective means to fine-tune heat transfer in <111>-oriented CVD 3C–SiC.
研究领域:
材料科学
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热物理学
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产品关联
DOI
高影响因子
RUSSIAN JOURNAL OF APPLIED CHEMISTRY
·
2020
·Vol. 93
·期 10
·1553-1560
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IF 0.69
Wang Keyan,Du Liyong,Liu Xinfang,Ding Yuqiang
Abstract A cerium compound with asymmetric amidinate ligands [Ce( i PrNC(Me)N t Bu) 3 ] has been reported and characterized in this paper. The compound showed good volatility and thermal stability, which were evaluated by TGA (thermogravimetric analysis). Corresponding results indicated the great potential of this compound for the chemical vapor deposition (CVD) process. Therefore, CeO x film and particle (loaded on TiO 2 ) deposition were conducted by CVD using Ce( i PrNC(Me)N t Bu) 3 and O 2 as precursors. Meanwhile, the photocatalytic activity of the CVD CeO x –TiO 2 composite was evaluated by degrading methylene blue solution under the irradiation of ultraviolet light (365 nm).
研究领域:
材料科学
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化学工程
·
催化
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DOI
高影响因子
CERAMICS INTERNATIONAL
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2022
·
IF 5.532
Zaichun Sun,Bingchu Mei,Hao Zhou,Shaoyong Qin,Huijuan Zhang
High-quality (001) orientated bismuth oxobromide (BiOBr) thin films were deposited on polycrystalline Sn: In 2 O 3 -glass substrates at open-air atmospheric pressure with mist chemical vapor deposition (CVD). Generally, it is difficult to control the surface morphology and thickness for BiOBr because of the high anisotropic crystal structure and very volatile halide . In this study, the growing thickness of BiOBr thin films showed a linear correlation with deposition time. Small thickness resulted in limited absorption ability, while large thickness led to increase of electrical resistance. The surface morphology of (001) orientated BiOBr thin films can be improved obviously under the acidic environment via suppressing Bi 3+ hydrolysis. The (001) orientated BiOBr thin films that deposited by mixed solvent of DMF and 35% HNO 3 aqueous solution exhibited the highest photocurrent density with 0.33 mA cm −2 at 0.6 V vs Ag/AgCl. The intermediate thickness and continuous surface morphology effectively promote the transfer and separation of electron-hole pairs, leading to superior photoelectrochemical (PEC) performance.
研究领域:
材料科学
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光电化学
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DOI
高影响因子
MATERIALS LETTERS
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2019
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IF 3.019
Kai Xu,Xiaohong Chen,Honglei Zhou,Liming Bi,Shaoli Fu,Wei Li,Xinkuan Liu,Fengcang Ma,Ke Zhang,Ping Liu
CNTs/Cu-Al 2 O 3 composite powders were successfully synthesized by in situ CVD using Cu-Al 2 O 3 composite powders obtained by internal oxidation of Cu-Al alloy powders. The multi-walled CNTs are obtained without agglomeration and stand on the surface of the composite powders. One end of the CNTs is well bound to matrix. The Cu nanoparticle was the catalyst for the growth of CNTs on the composite powders and Al 2 O 3 on the surface of the Cu-Al 2 O 3 powder plays a key role in the growth process.
研究领域:
材料科学
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化学工程
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产品关联
DOI
高影响因子
Materials Today Communications
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2024
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IF 3.7
Junliang Fan,Li Xiao,Yuantao Qin,Hao Yan,Xiaolin Qu,Zhenzhen Li,Hengxiang Gong
There is little research on α-Ga 2 O 3 single crystal film because it is a metastable phase of Ga 2 O 3 crystal and difficult for controllable fabrication. In this paper, highly crystallized Ga 2 O 3 thin films of poly-crystalline, α-Ga 2 O 3 and β-Ga 2 O 3 were prepared by modulating the growth temperature from 400 °C to 700 °C by mist-assisted CVD (Mist CVD) method. The results show that films grown at 525 °C owes the best crystalline quality of α-Ga 2 O 3 film. To further improve the crystallinity of α-Ga 2 O 3 thin film, a systematic simulation revealing the distribution changes of aerosol particle size, flow field, and temperature gradient in the reaction chamber were explored. The optimal growth region C with uniform particle size, well-distribute temperature gradient and stable flow field is determined. Meanwhile, the experimental results of α-Ga 2 O 3 thin films grown at different positions in the reaction chamber was proved to consistent with the simulation results. Furthermore, the optimal single crystallized α-Ga 2 O 3 thin films with smooth surface morphology and optical property were obtained. The PL spectrum operated at room temperature show the α-Ga 2 O 3 film with low defect density and high crystalline quality. It shows that the single crystallized α-Ga 2 O 3 is orientated grown on sapphire substrate with epitaxial relationship of α-Ga 2 O 3 (0006)//c-Al 2 O 3 (0006). Although, slight lattice mismatch is observed on the selected area electron diffraction pattern of the interface between sapphire and α-Ga 2 O 3 film, it is ideal for further application in devices. This work reveals the key point for α-Ga 2 O 3 single crystal film growth by mist CVD is to construct a steady and orderly environment through controlling aerosol particle state.
研究领域:
材料科学
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物理学
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DOI
高影响因子
SENSORS AND ACTUATORS B-CHEMICAL
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2016
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IF 4.758
Degang Jiang,Huihui Zhu,Wenrong Yang,Liang Cui,Jingquan Liu
Thermo-responsive graphene-polymer films have been obtained by the modification of large CVD graphene films with pyrene-terminated poly( N -isopropylacrylamide) (PNIPAAm) via non-covalent π-π stacking interactions. Pyrene-terminated PNIPAAm was prepared by reversible addition fragmentation chain transfer (RAFT) polymerization using a pyrene-functionalized RAFT agent . Since PNIPAAm possesses a lower critical solution temperature (LCST) of 32 °C, the as-prepared graphene-PNIPAAm films could be reversibly deformed as a result of the morphology response of PNIPAAm to the environmental temperature variation. In addition, the thermo-triggered deformation of the graphene-PNIPAAm films was observed to be reversible and controllable by manipulation of the environmental temperature. Atomic force microscopy (AFM) and high-resolution SEM analysis evidenced the successful attachment of the PNIPAAm on the graphene surface. The thickness of the polymer was revealed by high-resolution scanning electron microscopy (SEM). The successful stepwise fabrication of the CVD graphene-polymer composite films was also characterized using Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). These thermo-responsive composite films would be highly desirable for a wide range of applications, such as thermo-responsive actuators, a thermo-responsive intelligent switch was fabricated using these thermo-responsive graphene composite films.
研究领域:
材料科学
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高分子化学
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纳米技术
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产品关联
DOI
高影响因子
NEW JOURNAL OF CHEMISTRY
·
2022
·Vol. 46
·期 31
·15175-15184
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IF 3.925
Hai Wang,Jinxia Huang,Xiaobo Wang,Zhiguang Guo,Weimin Liu
Transition metal nitrides have good metallic conductivity and high pseudocapacitance, which have drawn extensive attention in the research of Zn-ion energy storage systems. In this paper, we present a novel fabrication of carbon cloth-supported TiN-coated carbon nanotube composites (TiN/CNTs@CC and TWC) via a CVD–ALD method using ethanol, TiCl4 and H2O as precursors. The prepared TWC composites can be used as self-supported electrodes with good flexibility and conductivity. Electrochemical performance tests show that the TiN/CNTs@CC electrode has a high specific capacitance of 363.5 F g−1 at 0.5 A g−1, good rate capability and excellent cycling stability with 92.9% capacity retention over 10 000 charge/discharge cycles. Impressively, the assembled zinc ion hybrid capacitor can achieve a high energy density of up to 81.8 W h kg−1 at a power density of 137.7 W kg−1. Even at a power density of 3013.7 W kg−1, a high energy density of 26.4 W h kg−1 is still achieved. This study provides a new insight into the application of nitride-derived carbon materials in zinc-ion hybrid capacitors.
研究领域:
材料科学
·
能源存储
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产品关联
DOI
高影响因子
INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
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2025
·
IF 3.9
Tong Cheng,Qi-Bo Wang,Qin-Qin Xu,Zhen-Hua Han,Jian-Zhong Yin
Mo doping optimizes the electronic structure of ReS2. MoxRe(1–x)S2/MoS2 alloy heterojunction exhibits more favorable application prospects in photodetection due to its higher electrical conductivity than ReS2/MoS2 heterojunction. However, alloy heterojunctions are difficult to prepare controllably using conventional vapor-phase chemical vapor deposition (CVD), and the heterojunction growth mechanism remains unclear. Here, a vapor–liquid–solid temperature-gradient process is proposed to grow alloy heterojunctions within predeposited molten Mo precursor droplets. The sulfuration reaction between Re diffusing into the droplet and Mo atoms facilitates the formation of alloy structures. The growth temperatures TRe and TMo in the temperature-gradient significantly affect the growth patterns and morphology evolution of the heterojunction. The MoS2 morphology in vertical alloy heterojunctions becomes triangular as the growth temperature increases. The dimension of the top MoxRe(1–x)S2 alloy is positively correlated with the Re diffusion concentration. Moreover, lateral alloy heterojunctions and single alloys are formed at lower and higher growth temperature differences between TRe and TMo, respectively. These results provide a controllable strategy for the synthesis of isotropic/anisotropic van der Waals TMDC heterojunctions.
研究领域:
材料科学
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纳米技术
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半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Materials Horizons
·
2022
·Vol. 9
·期 9
·2416-2424
·
IF 15.717
Xing Xin,Yanmei Zhang,Jiamei Chen,Mao-Lin Chen,Wei Xin,Mengfan Ding,Youzhe Bao,Weizhen Liu,Haiyang Xu,Yichun Liu
Defects, such as uncontrollable vacancies, will intensively degrade the material properties and device performance of CVD-grown transition metal dichalcogenides (TMDs). Although vacancies can be repaired by some post-processing measures, these treatments are usually time-consuming, complicated and may introduce uncontrollable chemical contaminants into TMDs. How to efficiently suppress the uncontrollable defects during CVD growth and acquire intrinsic high-quality CVD-grown TMDs without any after-treatment remains a critical challenge, and has not yet been well resolved. Here, an alternate-growth-etching (AGE) CVD method was demonstrated to fabricate defect-suppressed submillimeter-scale monolayer WS2 single crystals. Compared with normal CVD, the grain size of the as-grown WS2 can be enlarged by 4–5 times (∼520 μm) and the growth rate of ∼14.4 μm min−1 is also at a high level compared to reported results. Moreover, AGE-CVD can efficiently suppress atomic vacancies in WS2. In every growth-etching cycle, the etching of WS2 occurs preferentially at the defective sites, which will be healed at the following growth stage. As a result, WS2 monolayers obtained by AGE-CVD possess higher crystal quality, carrier mobility (8.3 cm2 V−1 s−1) and PL quantum yield (QY, 52.6%) than those by normal CVD. In particular, such a PL QY is the highest value ever reported for in situ CVD-grown TMDs without any after-treatment, and is even comparable to the values of mechanically exfoliated samples. This AGE-CVD method is also appropriate for the synthesis of other high-quality TMD single crystals on a large-scale.
研究领域:
材料科学
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纳米技术
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凝聚态物理
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半导体材料
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光电子学
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）