1. 脱水干燥
半导体清洗后晶圆 / 部件表面易残留微米级水膜,直接干燥会形成水痕、离子残留,本品因与水无限互溶、表面张力低、挥发速率快,能快速置换水膜并随水分一同挥发,实现无痕迹干燥。
适用制程:晶圆湿法清洗(RCA 清洗)后脱水、光刻显影后干燥、封装基板清洗后脱水、光学掩膜版清洗干燥
使用方式:浸泡置换、喷淋冲洗、气相蒸汽脱水
2. 去除轻量有机污染物
本品对非极性 / 弱极性有机污染物(如油污、指纹、光刻胶稀释剂残留、少量聚合物残渣)有良好溶解性,且对半导体基础材料无腐蚀,适合轻度有机污染的预清洗 / 后清洗。
适用制程:晶圆来料表面清洁、设备夹具 / 管路日常清洗、封装引线框架除油、光刻胶涂覆前晶圆预处理
优势:对比丙酮、NMP 等强有机溶剂,乙醇毒性更低、环保性更好,无闪点(无水乙醇闪点 12℃,操作时控温即可),适配产线安全要求。
3. 清洗剂复配助剂(氟醚 / 水基清洗剂核心配套)
这是本品在先进制程精密清洗中的关键用途,单独使用时对强极性污染物溶解力有限,因此常作为氢氟醚(HFE)、水基清洗剂的复配组分,弥补单一清洗剂的短板:
与 HFE 复配(如 C4FE/C5ME):提升氟醚对极性有机盐、水溶性残留的清洗能力,同时降低氟醚表面张力,增强对微纳结构(TSV 通孔、FinFET)的渗透力,清洗后产品与氟醚一同挥发,无二次残留;
与水基清洗剂复配:作为助溶剂,提升水基清洗剂对有机污染物的溶解性,同时起到消泡、快速干燥的作用,适配晶圆湿法清洗后的中和清洗。
4. 稀释剂与润湿性调节剂
稀释半导体用光刻胶、显影液、剥离液,精准调节浓度,保证涂覆 / 显影的均匀性;
加入其他清洗剂中调节润湿性,避免清洗液在晶圆表面形成液珠,防止液珠干燥后产生局部残留,提升清洗均匀性。
1、Dehydration and Drying
Micron-scale water films tend to remain on the surface of wafers/components after semiconductor cleaning, and direct drying will cause water marks and ionic residues. This product is infinitely miscible with water, featuring low surface tension and a fast volatilization rate. It can quickly displace water films and volatilize together with water to achieve mark-free drying.
Applicable Processes: Dehydration after wafer wet cleaning (RCA cleaning), drying after photolithography development, dehydration after package substrate cleaning, cleaning and drying of optical photomasks
Usage Methods: Immersion displacement, spray rinsing, vapor phase dehydration
2、Removal of Light Organic Contaminants
This product has good solubility for non-polar/weakly polar organic contaminants (e.g., oil stains, fingerprints, residual photoresist thinner, a small amount of polymer residue), and is non-corrosive to basic semiconductor materials, making it suitable for pre-cleaning/post-cleaning of light organic contamination.
Applicable Processes: Surface cleaning of incoming wafers, daily cleaning of equipment jigs/pipelines, oil removal of package lead frames, wafer pre-treatment before photoresist coating
Advantages: Compared with strong organic solvents such as acetone and NMP, ethanol has lower toxicity and better environmental performance. With a flash point of 12℃ for anhydrous ethanol (temperature control is only required during operation), it meets the safety requirements of production lines.
3、Blending Additive for Cleaning Agents (Core Matching for Fluoroether/Water-based Cleaning Agents)
This is a key application of the product in precision cleaning for advanced processes. Its solubility for strong polar contaminants is limited when used alone, so it is often used as a blending component for hydrofluoroether (HFE) and water-based cleaning agents to make up for the shortcomings of single cleaning agents:
Blending with HFE (e.g., C4FE/C5ME): Improves the cleaning ability of fluoroethers for polar organic salts and water-soluble residues, while reducing the surface tension of fluoroethers and enhancing the penetration into micro-nano structures (TSV vias, FinFET). After cleaning, the product volatilizes together with fluoroethers without secondary residues.
Blending with water-based cleaning agents: Acts as a cosolvent to improve the solubility of water-based cleaning agents for organic contaminants, and also functions as a defoamer and for rapid drying, suitable for neutralization cleaning after wafer wet cleaning.
4、Thinner and Wettability Regulator
Dilutes photoresists, developers and strippers for semiconductor use to precisely adjust concentrations and ensure the uniformity of coating/development.
Added to other cleaning agents to adjust wettability, prevent the formation of liquid beads of cleaning solution on the wafer surface, avoid local residues after liquid bead drying, and improve cleaning uniformity.